AlInN/AlN/GaN heterostructures were characterized by atomic force microscopy. V-defects and channels were observed. In phase-contrast mode, these features were found related to inhomogeneities associated with In-segregation and/or In-diffusion and Al-rich surface reconstruction. The electrical characterization via conductive atomic force microscopy showed enhanced conductivity regions related to In-rich traces within channels and V-defects.
A Minj, D.Cavalcoli, A.Cavallini (2010). Indium segregation in AlInN/AlN/GaN heterostructures. APPLIED PHYSICS LETTERS, 97, 132114-132117 [10.1063/1.3489433].
Indium segregation in AlInN/AlN/GaN heterostructures
MINJ, ALBERT;CAVALCOLI, DANIELA;CAVALLINI, ANNA
2010
Abstract
AlInN/AlN/GaN heterostructures were characterized by atomic force microscopy. V-defects and channels were observed. In phase-contrast mode, these features were found related to inhomogeneities associated with In-segregation and/or In-diffusion and Al-rich surface reconstruction. The electrical characterization via conductive atomic force microscopy showed enhanced conductivity regions related to In-rich traces within channels and V-defects.File in questo prodotto:
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