AlInN/AlN/GaN heterostructures were characterized by atomic force microscopy. V-defects and channels were observed. In phase-contrast mode, these features were found related to inhomogeneities associated with In-segregation and/or In-diffusion and Al-rich surface reconstruction. The electrical characterization via conductive atomic force microscopy showed enhanced conductivity regions related to In-rich traces within channels and V-defects.
Indium segregation in AlInN/AlN/GaN heterostructures / A Minj; D.Cavalcoli; A.Cavallini. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - STAMPA. - 97:(2010), pp. 132114-132117. [10.1063/1.3489433]
Indium segregation in AlInN/AlN/GaN heterostructures
MINJ, ALBERT;CAVALCOLI, DANIELA;CAVALLINI, ANNA
2010
Abstract
AlInN/AlN/GaN heterostructures were characterized by atomic force microscopy. V-defects and channels were observed. In phase-contrast mode, these features were found related to inhomogeneities associated with In-segregation and/or In-diffusion and Al-rich surface reconstruction. The electrical characterization via conductive atomic force microscopy showed enhanced conductivity regions related to In-rich traces within channels and V-defects.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
