ZnS is a versatile, abundant and eco-friendly semiconductor material employed in many applications. In the present manuscript, ZnS thin films were grown by one of the most simple and scalable vacuum method, that is the room temperature radio frequency sputtering technique. An extensive characterization has been performed by atomic force microscopy, X-ray diffraction, absorption and photoluminescence spectroscopies to identify the growth conditions required to obtain compact and low- defective ZnS layers, as required in many applications. Optimized thin films consist of nanocrystalline ZnS with very low surface roughness with respect to the literature, which make them particularly suitable for optical interfacing and alternative buffer layer in chalcogenide thin film solar cells.

Study of the physical properties of ZnS thin films deposited by RF sputtering

CAVALCOLI, DANIELA;PERANI, MARTINA;
2017

Abstract

ZnS is a versatile, abundant and eco-friendly semiconductor material employed in many applications. In the present manuscript, ZnS thin films were grown by one of the most simple and scalable vacuum method, that is the room temperature radio frequency sputtering technique. An extensive characterization has been performed by atomic force microscopy, X-ray diffraction, absorption and photoluminescence spectroscopies to identify the growth conditions required to obtain compact and low- defective ZnS layers, as required in many applications. Optimized thin films consist of nanocrystalline ZnS with very low surface roughness with respect to the literature, which make them particularly suitable for optical interfacing and alternative buffer layer in chalcogenide thin film solar cells.
Le Donne, A.; Cavalcoli, D.; Mereu, R.A.; Perani, M.; Pagani, L.; Acciarri, M.; Binetti, S.
File in questo prodotto:
Eventuali allegati, non sono esposti

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/603696
 Attenzione

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo

Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 18
  • ???jsp.display-item.citation.isi??? 16
social impact