GaN based heterostructures have recently gained increased interest due to their applications for high electron mobility transistors. In this letter AlInN/AlN/GaN heterojunctions grown by metal-organic chemical-vapor deposition with different AlN thicknesses have been investigated by surface photovoltage spectroscopy. The density of the two-dimensional electron gas (2DEG) forming at the interface has been measured by Hall effect. A band gap shift has been detected and its dependence on the 2DEG electron density at the AlN/GaN interface has been analyzed on the basis of the Moss–Burstein and renormalization effects.
D.Cavalcoli, S. Pandey, B. Fraboni, A. Cavallini (2011). Band gap shift in Al1−xInxN/AlN/GaN heterostructures studied by surface photovoltage spectroscopy. APPLIED PHYSICS LETTERS, 98, 142111-142114 [10.1063/1.3576938].
Band gap shift in Al1−xInxN/AlN/GaN heterostructures studied by surface photovoltage spectroscopy
CAVALCOLI, DANIELA;FRABONI, BEATRICE;CAVALLINI, ANNA
2011
Abstract
GaN based heterostructures have recently gained increased interest due to their applications for high electron mobility transistors. In this letter AlInN/AlN/GaN heterojunctions grown by metal-organic chemical-vapor deposition with different AlN thicknesses have been investigated by surface photovoltage spectroscopy. The density of the two-dimensional electron gas (2DEG) forming at the interface has been measured by Hall effect. A band gap shift has been detected and its dependence on the 2DEG electron density at the AlN/GaN interface has been analyzed on the basis of the Moss–Burstein and renormalization effects.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
