Hydrogenated nanocrystalline silicon (nc-Si:H) is a multiphase, heterogeneous material, composed of Si nanocrystals embedded in an amorphous matrix. It has been intensively studied recently due to very promising photovoltaic and optoelectronics applications. The present paper aims to study electronic transitions in nc-Si:H grown by Low Energy Plasma Enhanced Chemical Vapor Deposition by Surface Photovoltage Spectroscopy. The study of several thin films grown at different conditions and the comparison with recently published computational studies allowed us to advance a hypothesis on the defect structure responsible for electronic transitions in nc-Si:H.
D. Cavalcoli, M. Rossi, A.Cavallini (2011). Defect States in nc-Si:H investigated by surface photovoltage spectroscopy. JOURNAL OF APPLIED PHYSICS, 109, 053719-053725 [10.1063/1.3553583].
Defect States in nc-Si:H investigated by surface photovoltage spectroscopy
CAVALCOLI, DANIELA;CAVALLINI, ANNA
2011
Abstract
Hydrogenated nanocrystalline silicon (nc-Si:H) is a multiphase, heterogeneous material, composed of Si nanocrystals embedded in an amorphous matrix. It has been intensively studied recently due to very promising photovoltaic and optoelectronics applications. The present paper aims to study electronic transitions in nc-Si:H grown by Low Energy Plasma Enhanced Chemical Vapor Deposition by Surface Photovoltage Spectroscopy. The study of several thin films grown at different conditions and the comparison with recently published computational studies allowed us to advance a hypothesis on the defect structure responsible for electronic transitions in nc-Si:H.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
