In order to clarify the effect of charged dislocations and surface donor states on the transport mechanisms in polar AlInN/AlN/GaN heterostructures, we have studied the current-voltage characteristics of Schottky junctions fabricated on AlInN/AlN/GaN heterostructures. The reverse-bias leakage current behaviour has been interpreted with a Poole-Frenkel emission of electrons from trap states near the metal-semiconductor junction to dislocation induced states. The variation of the Schottky barrier height as a function of the AlN layer thickness has been measured and discussed, considering the role of the surface states in the formation of the two dimensional electron gas at AlN/GaN interface. © 2012 American Institute of Physics.
Pandey, S., Cavalcoli, D., Fraboni, B., Cavallini, A., Brazzini, T., Calle, F. (2012). Role of surface trap states on two-dimensional electron gas density in InAlN/AlN/GaN heterostructures. APPLIED PHYSICS LETTERS, 100(15), 152116-152120 [10.1063/1.4703938].
Role of surface trap states on two-dimensional electron gas density in InAlN/AlN/GaN heterostructures
PANDEY, SAURABH;Cavalcoli, D.
;Fraboni, B.;Cavallini, A.;
2012
Abstract
In order to clarify the effect of charged dislocations and surface donor states on the transport mechanisms in polar AlInN/AlN/GaN heterostructures, we have studied the current-voltage characteristics of Schottky junctions fabricated on AlInN/AlN/GaN heterostructures. The reverse-bias leakage current behaviour has been interpreted with a Poole-Frenkel emission of electrons from trap states near the metal-semiconductor junction to dislocation induced states. The variation of the Schottky barrier height as a function of the AlN layer thickness has been measured and discussed, considering the role of the surface states in the formation of the two dimensional electron gas at AlN/GaN interface. © 2012 American Institute of Physics.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
