Current-voltage measurements with Schottky contacts in a planar back-to-back configuration have been performed for InAlN/AlN/GaN heterostructures with different AlN interlayer thicknesses. We have identified the onset of a 2-dimensional electron gas (2DEG) controlled conduction from current-voltage curves analyses. A model has been proposed to determine the 2DEG electrical properties and the effects of the AlN thickness on the measured current-voltage curves have been discussed. The 2DEG properties extracted from current-voltage analyses have been compared with Hall measurements which shows excellent agreement in values.
S Pandey, B. Fraboni, D. Cavalcoli, A. Minj, A.Cavallini (2012). Current-voltage measurement of AlxIn1-xN/AlN/GaN heterostructures. PHYSICA STATUS SOLIDI. C, 9(3-4), 986-988 [10.1002/pssc.201100096].
Current-voltage measurement of AlxIn1-xN/AlN/GaN heterostructures
FRABONI, BEATRICE;CAVALCOLI, DANIELA;CAVALLINI, ANNA
2012
Abstract
Current-voltage measurements with Schottky contacts in a planar back-to-back configuration have been performed for InAlN/AlN/GaN heterostructures with different AlN interlayer thicknesses. We have identified the onset of a 2-dimensional electron gas (2DEG) controlled conduction from current-voltage curves analyses. A model has been proposed to determine the 2DEG electrical properties and the effects of the AlN thickness on the measured current-voltage curves have been discussed. The 2DEG properties extracted from current-voltage analyses have been compared with Hall measurements which shows excellent agreement in values.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
