Current-voltage measurements with Schottky contacts in a planar back-to-back configuration have been performed for InAlN/AlN/GaN heterostructures with different AlN interlayer thicknesses. We have identified the onset of a 2-dimensional electron gas (2DEG) controlled conduction from current-voltage curves analyses. A model has been proposed to determine the 2DEG electrical properties and the effects of the AlN thickness on the measured current-voltage curves have been discussed. The 2DEG properties extracted from current-voltage analyses have been compared with Hall measurements which shows excellent agreement in values.
Current-voltage measurement of AlxIn1-xN/AlN/GaN heterostructures
FRABONI, BEATRICE;CAVALCOLI, DANIELA;CAVALLINI, ANNA
2012
Abstract
Current-voltage measurements with Schottky contacts in a planar back-to-back configuration have been performed for InAlN/AlN/GaN heterostructures with different AlN interlayer thicknesses. We have identified the onset of a 2-dimensional electron gas (2DEG) controlled conduction from current-voltage curves analyses. A model has been proposed to determine the 2DEG electrical properties and the effects of the AlN thickness on the measured current-voltage curves have been discussed. The 2DEG properties extracted from current-voltage analyses have been compared with Hall measurements which shows excellent agreement in values.File in questo prodotto:
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