Point and extended defects introduced in p-type Cz Si by oxygen precipitation and plastic deformation have been investigated with electrical and optical methods. Different materials soxygen precipitated and/or deformed Cz Si and Fz Sid were examined in order to separate the role of oxygen precipitation, plastic deformation, and metallic contamination on the radiative and nonradiative electronic transitions at defect centers. A deep hole trap, named T1, has been associated with dislocation-related impurity centers; additional deep traps have been related to contamination by grown-in transition metals and to clusters involving oxygen atoms.
Castaldini, A., Cavalcoli, D., Cavallini, A., S., B., S., P. (2005). Electronic transitions at defect states in Cz p-type silicon. APPLIED PHYSICS LETTERS, 86, 162109-162112 [10.1063/1.1881788].
Electronic transitions at defect states in Cz p-type silicon
CASTALDINI, ANTONIO;CAVALCOLI, DANIELA;CAVALLINI, ANNA;
2005
Abstract
Point and extended defects introduced in p-type Cz Si by oxygen precipitation and plastic deformation have been investigated with electrical and optical methods. Different materials soxygen precipitated and/or deformed Cz Si and Fz Sid were examined in order to separate the role of oxygen precipitation, plastic deformation, and metallic contamination on the radiative and nonradiative electronic transitions at defect centers. A deep hole trap, named T1, has been associated with dislocation-related impurity centers; additional deep traps have been related to contamination by grown-in transition metals and to clusters involving oxygen atoms.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
