Annealing and oxygen role in the structural, optical and electrical properties of nc-SiOxNy

Research in the renewable energy field is mandatory to provide alternatives to fossil fuels in energy production and photovoltaics is very promising as solar energy is widely distributed. Moreover, the related technology is nowadays easily available, it can be integrated with buildings and presents limited environmental issues. Silicon Oxi-Nitride (SiOxNy) thin films have been characterized in view of the application in thin-film solar cells as well as in wafer based silicon solar cells, like Silicon HeteroJunction (SHJ) solar cells. Material properties like optical and electronic properties of the film, composition and structure of the nanocrystals have not been studied yet. In addition, the role of deposition conditions and precursor gas concentrations on these properties is also not clear. The results presented in the contribution aim to clarify several aspects concerning nc-SiOxNy film properties.