AlInN/AlN/GaN heterostructures were characterized by atomic force microscopy (AFM) in semi-contact and conductive mode. These indium-related alloys contain threading dislocations (TDs) with a density around 108 ~109cm-2, originating from the GaN (0001) substrate grown on sapphire. The TDs, with screw or mixed components, terminate at the surface of overgrown layers as V-defects. Using semi-contact AFM (phase-imaging) mode, we traced sites of indium segregation at the V-defects. These sites in V-defects were found to be highly conductive by current-AFM and could be a possible cause for the leakage current in Schottky diodes.
A. Minj, D. Cavalcoli , A. Cavallini (2011). Defect investigation in Al0.87In0.13N/AlN/GaN heterostructures by scanning force microscopy methods. JOURNAL OF PHYSICS. CONFERENCE SERIES, 326, 012011-012017 [10.1088/1742-6596/326/1/012011].
Defect investigation in Al0.87In0.13N/AlN/GaN heterostructures by scanning force microscopy methods
CAVALCOLI, DANIELA;CAVALLINI, ANNA
2011
Abstract
AlInN/AlN/GaN heterostructures were characterized by atomic force microscopy (AFM) in semi-contact and conductive mode. These indium-related alloys contain threading dislocations (TDs) with a density around 108 ~109cm-2, originating from the GaN (0001) substrate grown on sapphire. The TDs, with screw or mixed components, terminate at the surface of overgrown layers as V-defects. Using semi-contact AFM (phase-imaging) mode, we traced sites of indium segregation at the V-defects. These sites in V-defects were found to be highly conductive by current-AFM and could be a possible cause for the leakage current in Schottky diodes.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
