AlInN/AlN/GaN heterostructures were characterized by atomic force microscopy (AFM) in semi-contact and conductive mode. These indium-related alloys contain threading dislocations (TDs) with a density around 108 ~109cm-2, originating from the GaN (0001) substrate grown on sapphire. The TDs, with screw or mixed components, terminate at the surface of overgrown layers as V-defects. Using semi-contact AFM (phase-imaging) mode, we traced sites of indium segregation at the V-defects. These sites in V-defects were found to be highly conductive by current-AFM and could be a possible cause for the leakage current in Schottky diodes.

Defect investigation in Al0.87In0.13N/AlN/GaN heterostructures by scanning force microscopy methods

CAVALCOLI, DANIELA;CAVALLINI, ANNA
2011

Abstract

AlInN/AlN/GaN heterostructures were characterized by atomic force microscopy (AFM) in semi-contact and conductive mode. These indium-related alloys contain threading dislocations (TDs) with a density around 108 ~109cm-2, originating from the GaN (0001) substrate grown on sapphire. The TDs, with screw or mixed components, terminate at the surface of overgrown layers as V-defects. Using semi-contact AFM (phase-imaging) mode, we traced sites of indium segregation at the V-defects. These sites in V-defects were found to be highly conductive by current-AFM and could be a possible cause for the leakage current in Schottky diodes.
2011
A. Minj; D. Cavalcoli ; A. Cavallini
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/107505
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