Hydrogenated nanocrystalline silicon for photovoltaic application has been investigated by scanning force microscopy studies. Morphological properties as well as electrical properties have been investigated with high spatial resolution by scanning force microscopy analyses (AFM, Atomic Force Microscopy and C-AFM conductive AFM). Transmission Electron Microscopy (TEM) studies have been also carried out for structural characterization. The main problem regarding the electronic properties is to understand where the current flows. Actually the question has remained unresolved due to conflicting literature data. The present contribution aims to clarify which of the material phases mainly contributes to the conduction mechanisms.
Hydrogenated nanocrystalline silicon investigated by conductive atomic force microscopy / A Cavallini; D Cavalcoli; M Rossi; A Tomasi; B Pichaud; M Texier; A Le Donne; S Pizzini; D Chrastina; G Isella. - STAMPA. - (2007), pp. 301-304. (Intervento presentato al convegno Microscopy of Semiconducting Materials XV tenutosi a Churchill College, Cambridge, UK nel 2 – 5 April 2007).
Hydrogenated nanocrystalline silicon investigated by conductive atomic force microscopy
CAVALLINI, ANNA;CAVALCOLI, DANIELA;
2007
Abstract
Hydrogenated nanocrystalline silicon for photovoltaic application has been investigated by scanning force microscopy studies. Morphological properties as well as electrical properties have been investigated with high spatial resolution by scanning force microscopy analyses (AFM, Atomic Force Microscopy and C-AFM conductive AFM). Transmission Electron Microscopy (TEM) studies have been also carried out for structural characterization. The main problem regarding the electronic properties is to understand where the current flows. Actually the question has remained unresolved due to conflicting literature data. The present contribution aims to clarify which of the material phases mainly contributes to the conduction mechanisms.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
