Thin films of nanocrystalline SiOxNy are studied in view of their application in silicon heterojunction (SHJ) solar cells. In particular, the formation of the nanocrystals and their effects on the electrical and optical properties of the films are investigated. The role of the oxygen content on the properties of the layers is clarified as well. The obtained layers show very high conductivity (44 S/cm), low activation energy (1.85 meV) and high Tauc gap (2.5 eV), promising features for their application in photovoltaics.
Perani, M., Brinkmann, N., Hammud, A., Cavalcoli, D., Terheiden, B. (2015). Nanocrystal formation in silicon oxy-nitride films for photovoltaic applications: Optical and electrical properties. JOURNAL OF PHYSICAL CHEMISTRY. C, 119(24), 13907-13914 [10.1021/acs.jpcc.5b02286].
Nanocrystal formation in silicon oxy-nitride films for photovoltaic applications: Optical and electrical properties
PERANI, MARTINA;CAVALCOLI, DANIELA;
2015
Abstract
Thin films of nanocrystalline SiOxNy are studied in view of their application in silicon heterojunction (SHJ) solar cells. In particular, the formation of the nanocrystals and their effects on the electrical and optical properties of the films are investigated. The role of the oxygen content on the properties of the layers is clarified as well. The obtained layers show very high conductivity (44 S/cm), low activation energy (1.85 meV) and high Tauc gap (2.5 eV), promising features for their application in photovoltaics.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
