Here we report on the study of nano-crack formation in Al1xInxN/AlN/GaN heterostructures, on its association with composition fluctuation and on its local electrical properties. It is shown here that indium segregation at nano-cracks and threading dislocations originating from the non-pseudomorphic AlN interlayer could be the cause of the high reverse-bias gate leakage current of Ni/Au Schottky contacts on Al1xInxN/AlN/GaN heterostructures and significantly affects the contact rectifying behavior. Segregation of indium around crack tips in Al1xInxN acting as conductive paths was assessed with conductive atomic force microscopy.
A. Minj, D. Cavalcoli, S. Pandey, B. Fraboni, A. Cavallini, T. Brazzini, et al. (2012). Nanocrack-induced leakage current in AlInN/AlN/GaN. SCRIPTA MATERIALIA, 66, 327-331 [10.1016/j.scriptamat.2011.11.024].
Nanocrack-induced leakage current in AlInN/AlN/GaN
MINJ, ALBERT;CAVALCOLI, DANIELA;PANDEY, SAURABH;FRABONI, BEATRICE;CAVALLINI, ANNA;
2012
Abstract
Here we report on the study of nano-crack formation in Al1xInxN/AlN/GaN heterostructures, on its association with composition fluctuation and on its local electrical properties. It is shown here that indium segregation at nano-cracks and threading dislocations originating from the non-pseudomorphic AlN interlayer could be the cause of the high reverse-bias gate leakage current of Ni/Au Schottky contacts on Al1xInxN/AlN/GaN heterostructures and significantly affects the contact rectifying behavior. Segregation of indium around crack tips in Al1xInxN acting as conductive paths was assessed with conductive atomic force microscopy.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.