Aim of the present contribution is to review several results obtained by the application of surface photovoltage spectroscopy method to low dimensional semiconductors. Photo-induced electronic transitions have been detected in: heterostructures based on III-nitrides, Si-based nanostructures (nanowires and nanocrystals) and nanoporous Ge layers. The effect of two-dimensional electron gas and of quantum confinement on the energy of band-to-band transitions in these structures has been studied. The results show that Surface Potovoltage Spectroscopy is a flexible and non-destructive method capable to reveal phase changes, Burstein Moss effects, doping-related features, light trapping and quantum confinement effects in low dimensional structures that can be useful for several optoelectronic applications.

Electronic transitions in low dimensional semiconductor structures measured by surface photovoltage spectroscopy

Cavalcoli, Daniela
Conceptualization
;
Fazio, Maria Antonietta
Membro del Collaboration Group
2019

Abstract

Aim of the present contribution is to review several results obtained by the application of surface photovoltage spectroscopy method to low dimensional semiconductors. Photo-induced electronic transitions have been detected in: heterostructures based on III-nitrides, Si-based nanostructures (nanowires and nanocrystals) and nanoporous Ge layers. The effect of two-dimensional electron gas and of quantum confinement on the energy of band-to-band transitions in these structures has been studied. The results show that Surface Potovoltage Spectroscopy is a flexible and non-destructive method capable to reveal phase changes, Burstein Moss effects, doping-related features, light trapping and quantum confinement effects in low dimensional structures that can be useful for several optoelectronic applications.
Cavalcoli, Daniela*; Fazio, Maria Antonietta
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11585/664727
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