Mono and multi-crystalline Silicon characterization by Non-Contacting Techniques

Scanning Kelvin probe and surface photovoltage methods have been implemented in a single tool to obtain information on surface, as well as on bulk, electronic properties of mono- and multicrystalline Si wafers. The two combined methods allow for the measurement, in a noncontacting and nondestructive way, of three parameters: minority carrier diffusion length, majority carrier distribution in the near-surface region, and work function difference over the whole wafer area. Examples of the application of these methods to the characterization of crystalline wafers are presented.