Optoelectronic properties of nanoporous Ge (np-Ge) have been investigated by Surface Photovoltage Spectroscopy. Electronic transitions in np-Ge have been compared with the ones obtained on crystalline and amorphous Ge, their dependence on ion implantation fluence and annealing treatment has been investigated. Np-Ge layers decorated with Au nanoparticles have been studied, and a significant photovoltage enhancement, probably related to light trapping effects, has been found. This result can be of major interest for future photovoltaic applications.
D. Cavalcoli, B. Fraboni, G. Impellizzeri, L. Romano, E. Scavetta, M.G. Grimaldi (2014). Optoelectronic properties of nanoporous Ge layers investigated by surface photovoltage spectroscopy. MICROPOROUS AND MESOPOROUS MATERIALS, 196(15 September 2014), 175-178 [10.1016/j.micromeso.2014.05.013].
Optoelectronic properties of nanoporous Ge layers investigated by surface photovoltage spectroscopy
CAVALCOLI, DANIELA;FRABONI, BEATRICE;SCAVETTA, ERIKA;
2014
Abstract
Optoelectronic properties of nanoporous Ge (np-Ge) have been investigated by Surface Photovoltage Spectroscopy. Electronic transitions in np-Ge have been compared with the ones obtained on crystalline and amorphous Ge, their dependence on ion implantation fluence and annealing treatment has been investigated. Np-Ge layers decorated with Au nanoparticles have been studied, and a significant photovoltage enhancement, probably related to light trapping effects, has been found. This result can be of major interest for future photovoltaic applications.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
