CRIS Current Research Information System

SANTARELLI, ALBERTO
 Distribuzione geografica
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Continente #
NA - Nord America 12.478
AS - Asia 6.158
EU - Europa 5.295
AF - Africa 441
SA - Sud America 392
OC - Oceania 10
Continente sconosciuto - Info sul continente non disponibili 8
Totale 24.782
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Nazione #
US - Stati Uniti d'America 12.413
SG - Singapore 2.086
CN - Cina 1.716
GB - Regno Unito 1.197
IT - Italia 1.190
VN - Vietnam 1.159
DE - Germania 764
SE - Svezia 504
HK - Hong Kong 434
UA - Ucraina 378
IN - India 317
RU - Federazione Russa 294
BR - Brasile 254
IE - Irlanda 213
CI - Costa d'Avorio 202
FR - Francia 198
KR - Corea 121
EE - Estonia 105
JP - Giappone 100
ZA - Sudafrica 100
FI - Finlandia 89
JO - Giordania 89
NL - Olanda 74
TG - Togo 63
AT - Austria 51
AR - Argentina 49
SC - Seychelles 49
CA - Canada 45
CH - Svizzera 45
ES - Italia 37
BG - Bulgaria 35
BE - Belgio 34
ID - Indonesia 31
BO - Bolivia 25
GR - Grecia 22
EC - Ecuador 21
PL - Polonia 21
BD - Bangladesh 16
TW - Taiwan 16
CL - Cile 14
MX - Messico 12
CO - Colombia 10
CZ - Repubblica Ceca 10
PK - Pakistan 9
PY - Paraguay 9
LB - Libano 8
IL - Israele 7
IQ - Iraq 7
IR - Iran 7
HR - Croazia 6
LT - Lituania 6
NG - Nigeria 6
SI - Slovenia 6
AU - Australia 5
DZ - Algeria 5
KE - Kenya 5
MY - Malesia 5
UZ - Uzbekistan 5
EG - Egitto 4
TR - Turchia 4
VE - Venezuela 4
AZ - Azerbaigian 3
EU - Europa 3
MA - Marocco 3
NZ - Nuova Zelanda 3
PE - Perù 3
RO - Romania 3
SA - Arabia Saudita 3
UY - Uruguay 3
A2 - ???statistics.table.value.countryCode.A2??? 2
BA - Bosnia-Erzegovina 2
CU - Cuba 2
DK - Danimarca 2
ET - Etiopia 2
NP - Nepal 2
PH - Filippine 2
PT - Portogallo 2
A1 - Anonimo 1
AE - Emirati Arabi Uniti 1
AL - Albania 1
BH - Bahrain 1
BN - Brunei Darussalam 1
BZ - Belize 1
CW - ???statistics.table.value.countryCode.CW??? 1
DO - Repubblica Dominicana 1
GN - Guinea 1
GP - Guadalupe 1
GT - Guatemala 1
HU - Ungheria 1
KG - Kirghizistan 1
KZ - Kazakistan 1
LK - Sri Lanka 1
MD - Moldavia 1
MM - Myanmar 1
MN - Mongolia 1
MT - Malta 1
NO - Norvegia 1
OM - Oman 1
RS - Serbia 1
SK - Slovacchia (Repubblica Slovacca) 1
Totale 24.774
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Città #
Ann Arbor 4.491
Singapore 1.363
Southend 1.022
Fairfield 743
Chandler 732
Houston 673
Ashburn 620
Santa Clara 571
Wilmington 506
Dong Ket 488
Hong Kong 428
Dallas 406
Woodbridge 373
Seattle 305
Princeton 304
Hefei 297
Bologna 284
Jacksonville 248
Cambridge 247
Beijing 228
Dublin 212
Abidjan 202
Boardman 193
Nanjing 132
Berlin 114
Westminster 114
Ho Chi Minh City 111
Seoul 111
Turin 109
Padova 99
Mantova 97
Medford 96
Amman 89
Los Angeles 88
Tokyo 87
Hanoi 84
Buffalo 79
Milan 76
Jinan 69
Lomé 63
Munich 61
San Diego 60
Redondo Beach 59
New York 57
Saint Petersburg 56
Mülheim 50
Des Moines 44
Shenyang 40
São Paulo 39
Helsinki 37
Vienna 37
Nanchang 35
Sofia 35
Vercelli 34
Hebei 33
Cesena 32
Turku 32
Mahé 31
Shanghai 31
Braunschweig 30
Guangzhou 30
Tianjin 30
Bern 29
Changsha 29
Brussels 28
Frankfurt am Main 27
Bengaluru 26
Chicago 26
La Paz 24
London 24
Hangzhou 23
Zhengzhou 23
Jiaxing 22
Olalla 22
Taiyuan 22
Lappeenranta 20
Amsterdam 19
Fremont 18
Montreal 18
San Francisco 17
Jakarta 16
Moscow 16
Warsaw 16
Haikou 15
Toronto 15
Falls Church 14
Fuzhou 14
Modena 14
Redmond 14
Verona 14
Yubileyny 14
Dearborn 13
Haiphong 13
Harbin 13
Rimini 13
Rome 13
Wuhan 13
Brooklyn 12
Chengdu 12
Ningbo 12
Totale 18.140
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Nome #
Implementation of non-conventional nonlinear models for electron devices in commercial CAD tools 350
Nonlinear RF device modelling in the presence of low-frequency dispersive phenomena 349
A 150-W IR WPT Embedded System at 6.78-MHz for the Supply and Control of Linear Motors 314
C Band DROs Using Microwave Bipolar Devices: Nonlinear Design Technique and Noise Model for Phase Noise Prediction 284
A Ka-Band MMIC LNA in GaN-on-Si 100-nm Technology for High Dynamic Range Radar Receivers 267
Numerically efficient design of highly linear microwave power amplifiers 264
Charge-controlled GaN FET modeling by displacement current integration from frequency-domain NVNA measurements 240
A GaN HEMT Global Large-Signal Model Including Charge Trapping for Multibias Operation 230
A Double-Pulse Technique for the Dynamic I/V Characterization of GaN FETs 227
S-functions mixer modeling for linearization purposes 222
Accurate EM-based Modeling of Cascode FETs 215
Global modeling of GaN HEMT resistive current including charge trapping and self-heating for multi-bias multi-class PA performance prediction 209
A Nonquasi-Static Empirical Model of Electron Devices 206
A bias network for small duty-cycle fast-pulsed measurement of RF power transistors 205
A VNA-Based Wideband Measurement System for Large-Signal Characterization of Multiport Circuits 204
Automated Microwave Device Characterization Set-Up Based on a Technology-Independent Generalized Bias System 204
A new technique for thermal resistance measurement in power electron devices 204
Critical Issues in Highly-Linear Power Amplifier Design 203
A Simple Technique for Measuring the Thermal Impedance and the Thermal Resistance of HBTs 202
Antenne integrate attive per terminali mobili ad alta efficienza 201
A 40 watt C-band MMIC high power amplifier for space radar application exploiting a 0.25 um AlGaN/GaN on SiC process 201
Dynamic RON Characterization Technique for the Evaluation of Thermal and Off-State Voltage Stress of GaN Switches 201
A New Empirical Model for the Characterization of Low-Frequency Dispersive Effects in FET Electron Devices Accounting for Thermal Influence on the Trapping State 194
Charge-conservative GaN HEMT nonlinear modeling from non-isodynamic multi-bias S-parameter measurements 192
A C-Band AlGaN-GaN MMIC HPA for SAR 191
Accurate Nonlinear Electron Device Modelling for Cold FET Mixer Design 190
Assessment of the Trap-Induced Insertion Loss Degradation of RF GaN Switches under Operating Regimes 190
A Dual-Source Nonlinear Measurement System Oriented to the Empirical Characterization of Low-Frequency Dispersion in Microwave Electron Devices 189
Pre-pulsing characterization of GaN PAs with dynamic supply 189
Behavioral modeling of RF PAs under wideband load modulation 189
GaN power amplifier digital predistortion by multi-objective optimization for maximum RF output power 187
Validation and Comparison of PA models 184
Compact empirical modeling of nonlinear dynamic thermal effects in electron devices 184
Characterization and Modeling of RF GaN Switches Accounting for Trap-Induced Degradation Under Operating Regimes 184
Automatic Extraction of Measurement-Based Large-Signal FET Models by Nonlinear Function Sampling 184
A generalized CAD interface for nonlinear dynamic electron device models 183
Double-pulse characterization of GaN-on-Sapphire FETs for technology development 180
A Prepulsing Technique for the Characterization of GaN Power Amplifiers With Dynamic Supply Under Controlled Thermal and Trapping States 180
Evaluation of GaN FET power performance reduction due to nonlinear charge trapping effects 179
Active baseband drain-supply terminal load-pull of an X-band GaN MMIC PA 179
Automatic Optimization of Input Split and Bias Voltage in Digitally Controlled Dual-Input Doherty RF PAs 178
An Automated Measurement System Aimed to the Nonlinear Dynamic Characterization of Electron Device Time Dispersion 177
Accurate modeling of electron device I/V characteristics through a simplified large-signal measurement setup 177
On-Wafer I/V Measurement Setup for the Characterization of Low-Frequency Dispersion in Electron Devices 176
Small-Signal Operation-Based Simplified Verification of Non-Linear Models for Millimeter-Wave Electron Devices 176
A distributed approach for millimetre-wave electron device modelingA distributed approach for millimetre-wave electron device modeling 176
Automated Microwave-Device Characterization Setup Based on a Technology-Independent Generalized Bias System 176
A simple non-quasi-static non-linear model of electron devices 175
Scalable nonlinear FET model based on a distributed parasitic network description 174
An Active Bias Network for the Characterization of Low-Frequency Dispersion in High-Power Microwave Electron Devices 174
Three Port Non-Linear Characterization of Power Amplifiers under Modulated Excitations Using a Vector Network Analyzer Platform 174
New pulsed measurement setup for GaN and GaAs FETs characterization 173
Multitone Multiharmonic Scattering Parameters for the Characterization of Nonlinear Networks 173
GaN FET Nonlinear Modeling Based on Double Pulse I/V Characteristics 172
Nonlinear Dynamic Modeling of RF PAs Using Custom Vector Fitting Algorithm 172
Isotrap Pulsed IV Characterization of GaN HEMTs for PA Design 172
A Procedure for GaN HEMT Charge Functions Extraction from Multi-Bias S-Parameters 171
Error vector magnitude measurement for power amplifiers under wideband load impedance mismatch: System-level analysis and VNA-based implementation 171
Large-signal GaN transistor characterization and modeling including charge trapping nonlinear dynamics 169
An empirical behavioral model for RF PAs including self-heating 169
Multi-bias nonlinear characterization of GaN FET trapping effects through a multiple pulse time domain network analyzer 169
Accurate Small- and Large-Signal Predictions Using a Simple, Nonquasi-Static, Empirical Model 168
Extraction of an Extrinsic Parasitic Network for Accurate mm-Wave FET Scalable Modeling on the Basis of Full-Wave EM Simulation 166
A Three-Port Nonlinear Dynamic Behavioral Model for Supply-Modulated RF PAs 165
A Two-Port Nonlinear Dynamic Behavioral Model of RF PAs Subject to Wideband Load Modulation 165
Comparison of Electron Device Models Based on Operation-specific Metrics 165
Nonlinear models of microwave power devices and circuits 164
Two-Input Nonlinear Dynamic Model Inversion for the Linearization of Envelope-Tracking RF PAs 164
Characterization of the Nonlinear Thermal Resistance and Pulsed Thermal Dynamic Behavior of AlGaN–GaN HEMTs on SiC 163
Scalable Equivalent Circuit FET Model for MMIC Design Identified Through FW-EM-Analyses 161
Accurate PHEMT Intermodulation Prediction in the Presence of Low-Frequency Dispersion Effects 161
Measurement-Based Automatic Extraction of FET Parasitic Network by Linear Regression 161
Thermal characterization of nonlinear charge trapping effects in GaN-FETs 160
Iso-thermal and iso-dynamic direct charge function characterization of GaN FET with single large-signal measurement 160
Joint Dual-Input Digital Predistortion of Supply-Modulated RF PA by Surrogate-Based Multi-Objective Optimization 159
Beam-Dependent Active Array Linearization by Global Feature-Based Machine Learning 158
Modelling and Design of a Wideband 6-18 GHz GaN Resistive Mixer 158
Microwave Characterization of Trapping Effects in 100-nm GaN-on-Si HEMT Technology 158
Nonlinear Modelling of InP Devices for W-band Applications 157
Simplified Validation of Non-Linear Models for Micro- and Millimeter-Wave Electron Devices 155
Design of 40-W AlGaN/GaN MMIC High Power Amplifiers for C-Band SAR Applications 155
Stability Analysis and Design Criteria of Paralleled-Device Power Amplifiers Under Large-Signal Regime 155
Characterization of GaN and GaAs FETs through a new pulsed measurement system 154
Active baseband drain-supply terminal load-pull of an X-band GaN MMIC PA 154
HB Analysis of Injection Locked Oscillators using commercial CAD tools 153
Nonlinear characterization of microwave power amplifiers with supply modulation 152
Electron Device Model Parameter Identification Through Large-Signal-Predictive Small-Signal-Based Error Functions 151
Large-signal characterization of GaN-based transistors for accurate nonlinear modelling of dispersive effects 151
Nonquasi-Static Large-Signal Model of GaN FETs through an Equivalent Voltage Approach 151
Breakdown Walkout Investigation in Electron Devices Under Nonlinear Dynamic Regime 151
An Innovative Two-Source Large-Signal Measurement System for the Characterization of Low-Frequency Dispersive Effects in FETs 150
Nonlinear dispersive effects modelling for the accurate drain current prediction in GaN-based microwave power amplifiers 150
Active Integrated Antennas for Efficient Mobile Terminals 150
Supply-terminal 40 MHz BW characterization of impedance-like nonlinear functions for envelope tracking PAs 150
Mixer-like modeling with dynamic baseband characterization for supply-modulated PAs 150
A Behavioral Approach to Equivalent-Circuit Modeling of GaN MMIC Varactor Cells 147
Nonlinear charge trapping effects on pulsed I/V characteristics of GaN FETs 146
Broadband Measurement of Error Vector Magnitude for Microwave Vector Signal Generators Using a Vector Network Analyzer 145
Pulsed NVNA measurements for dynamic characterization of RF PAs 145
EM-based Parasitic Elements Identification For Scalable Electron Device Modeling 144
Totale 18.266
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Categoria #
all - tutte 65.664
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 65.664
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20211.442 0 0 0 0 0 89 52 134 224 107 120 716
2021/20227.003 454 92 787 715 877 717 723 687 763 262 394 532
2022/20233.075 341 423 156 370 167 235 93 182 552 88 263 205
2023/2024890 70 245 47 71 45 118 53 96 29 44 33 39
2024/20253.706 140 593 323 227 798 147 409 72 56 110 156 675
2025/20263.966 349 626 1.041 569 922 459 0 0 0 0 0 0
Totale 25.100