CRIS Current Research Information System

SANTARELLI, ALBERTO
 Distribuzione geografica
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Continente #
NA - Nord America 14.731
AS - Asia 8.431
EU - Europa 5.977
SA - Sud America 532
AF - Africa 488
Continente sconosciuto - Info sul continente non disponibili 338
OC - Oceania 12
Totale 30.509
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Nazione #
US - Stati Uniti d'America 14.567
SG - Singapore 2.420
VN - Vietnam 2.266
CN - Cina 1.998
IT - Italia 1.530
GB - Regno Unito 1.220
DE - Germania 789
SE - Svezia 534
HK - Hong Kong 495
UA - Ucraina 385
IN - India 365
FR - Francia 362
BR - Brasile 317
RU - Federazione Russa 298
IE - Irlanda 222
CI - Costa d'Avorio 203
JP - Giappone 166
KR - Corea 147
BD - Bangladesh 117
ZA - Sudafrica 117
FI - Finlandia 111
EE - Estonia 107
CA - Canada 92
JO - Giordania 91
NL - Olanda 84
AR - Argentina 66
TG - Togo 63
PH - Filippine 61
SC - Seychelles 54
AT - Austria 53
CH - Svizzera 50
TH - Thailandia 47
ES - Italia 45
TW - Taiwan 40
ID - Indonesia 38
BE - Belgio 36
BG - Bulgaria 36
CO - Colombia 34
EC - Ecuador 31
IQ - Iraq 30
PL - Polonia 28
BO - Bolivia 27
PK - Pakistan 25
GR - Grecia 23
CL - Cile 21
MX - Messico 20
VE - Venezuela 18
MY - Malesia 17
TR - Turchia 16
SA - Arabia Saudita 15
UZ - Uzbekistan 12
LB - Libano 11
CR - Costa Rica 10
CZ - Repubblica Ceca 10
JM - Giamaica 9
KE - Kenya 9
PY - Paraguay 9
NP - Nepal 8
AU - Australia 7
DZ - Algeria 7
EG - Egitto 7
HN - Honduras 7
HR - Croazia 7
IL - Israele 7
IR - Iran 7
LT - Lituania 7
PT - Portogallo 7
RO - Romania 7
NG - Nigeria 6
SI - Slovenia 6
ET - Etiopia 5
MA - Marocco 5
PE - Perù 5
TT - Trinidad e Tobago 5
MD - Moldavia 4
UY - Uruguay 4
AM - Armenia 3
AZ - Azerbaigian 3
BA - Bosnia-Erzegovina 3
BZ - Belize 3
DO - Repubblica Dominicana 3
EU - Europa 3
GE - Georgia 3
GT - Guatemala 3
MN - Mongolia 3
NZ - Nuova Zelanda 3
PR - Porto Rico 3
SN - Senegal 3
TN - Tunisia 3
A2 - ???statistics.table.value.countryCode.A2??? 2
AE - Emirati Arabi Uniti 2
AL - Albania 2
BB - Barbados 2
BH - Bahrain 2
CU - Cuba 2
CW - ???statistics.table.value.countryCode.CW??? 2
DK - Danimarca 2
GH - Ghana 2
KG - Kirghizistan 2
KZ - Kazakistan 2
Totale 30.146
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Città #
Ann Arbor 4.491
Singapore 1.684
Southend 1.022
Ashburn 751
Fairfield 743
Chandler 732
Houston 678
Santa Clara 614
San Jose 537
Wilmington 506
Dong Ket 488
Hong Kong 462
Dallas 421
Ho Chi Minh City 411
Woodbridge 373
Council Bluffs 366
Bologna 335
Hanoi 334
Seattle 310
Princeton 304
Hefei 299
Beijing 250
Jacksonville 250
Cambridge 249
Boardman 236
Dublin 221
Abidjan 203
Lauterbourg 145
Nanjing 134
Tokyo 134
Los Angeles 128
New York 128
Milan 121
Turin 118
Berlin 114
Seoul 114
Westminster 114
Padova 99
Mantova 97
Medford 96
Amman 90
Buffalo 88
Chicago 85
Jinan 71
San Diego 64
Lomé 63
Munich 61
Redondo Beach 60
Helsinki 59
Saint Petersburg 56
Haiphong 53
Da Nang 51
São Paulo 51
Mülheim 50
Rome 47
Des Moines 46
Rimini 46
Frankfurt am Main 43
Guangzhou 43
Phoenix 42
Shanghai 42
Shenyang 41
Vienna 39
Changsha 36
Nanchang 35
Sofia 35
Vercelli 34
Cesena 33
Hebei 33
Tianjin 32
Turku 32
Mahé 31
Braunschweig 30
Brussels 30
Orem 30
Bern 29
Hangzhou 29
Montreal 29
Bengaluru 27
London 27
Amsterdam 26
Zhengzhou 26
San Francisco 25
Toronto 25
Atlanta 24
La Paz 24
Taiyuan 23
Brooklyn 22
Chennai 22
Jiaxing 22
Olalla 22
San Lazzaro di Savena 22
Verona 22
Johannesburg 21
Can Tho 20
Lappeenranta 20
Warsaw 20
Bangkok 18
Fremont 18
Hải Dương 18
Totale 21.075
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Nome #
Nonlinear RF device modelling in the presence of low-frequency dispersive phenomena 391
Implementation of non-conventional nonlinear models for electron devices in commercial CAD tools 372
A 150-W IR WPT Embedded System at 6.78-MHz for the Supply and Control of Linear Motors 369
A Ka-Band MMIC LNA in GaN-on-Si 100-nm Technology for High Dynamic Range Radar Receivers 342
C Band DROs Using Microwave Bipolar Devices: Nonlinear Design Technique and Noise Model for Phase Noise Prediction 310
Numerically efficient design of highly linear microwave power amplifiers 292
S-functions mixer modeling for linearization purposes 292
Charge-controlled GaN FET modeling by displacement current integration from frequency-domain NVNA measurements 281
A GaN HEMT Global Large-Signal Model Including Charge Trapping for Multibias Operation 269
A VNA-Based Wideband Measurement System for Large-Signal Characterization of Multiport Circuits 259
A Double-Pulse Technique for the Dynamic I/V Characterization of GaN FETs 259
A Behavioral Approach to Equivalent-Circuit Modeling of GaN MMIC Varactor Cells 257
Enhancing K-Band Dual-Input Doherty PA Performance by Bayesian Optimization 250
Dynamic RON Characterization Technique for the Evaluation of Thermal and Off-State Voltage Stress of GaN Switches 250
Global modeling of GaN HEMT resistive current including charge trapping and self-heating for multi-bias multi-class PA performance prediction 248
A bias network for small duty-cycle fast-pulsed measurement of RF power transistors 239
A 40 watt C-band MMIC high power amplifier for space radar application exploiting a 0.25 um AlGaN/GaN on SiC process 236
Accurate EM-based Modeling of Cascode FETs 231
A Nonquasi-Static Empirical Model of Electron Devices 229
A Simple Technique for Measuring the Thermal Impedance and the Thermal Resistance of HBTs 228
Antenne integrate attive per terminali mobili ad alta efficienza 228
Charge-conservative GaN HEMT nonlinear modeling from non-isodynamic multi-bias S-parameter measurements 227
Multitone Multiharmonic Scattering Parameters for the Characterization of Nonlinear Networks 227
GaN power amplifier digital predistortion by multi-objective optimization for maximum RF output power 227
Critical Issues in Highly-Linear Power Amplifier Design 226
Automated Microwave Device Characterization Set-Up Based on a Technology-Independent Generalized Bias System 225
Behavioral modeling of RF PAs under wideband load modulation 224
Assessment of the Trap-Induced Insertion Loss Degradation of RF GaN Switches under Operating Regimes 223
A C-Band AlGaN-GaN MMIC HPA for SAR 223
A new technique for thermal resistance measurement in power electron devices 222
Pre-pulsing characterization of GaN PAs with dynamic supply 222
Error vector magnitude measurement for power amplifiers under wideband load impedance mismatch: System-level analysis and VNA-based implementation 221
Joint Dual-Input Digital Predistortion of Supply-Modulated RF PA by Surrogate-Based Multi-Objective Optimization 221
A distributed approach for millimetre-wave electron device modelingA distributed approach for millimetre-wave electron device modeling 217
Automatic Extraction of Measurement-Based Large-Signal FET Models by Nonlinear Function Sampling 217
Automatic Optimization of Input Split and Bias Voltage in Digitally Controlled Dual-Input Doherty RF PAs 216
A Dual-Source Nonlinear Measurement System Oriented to the Empirical Characterization of Low-Frequency Dispersion in Microwave Electron Devices 216
Accurate Nonlinear Electron Device Modelling for Cold FET Mixer Design 215
Double-pulse characterization of GaN-on-Sapphire FETs for technology development 214
A Prepulsing Technique for the Characterization of GaN Power Amplifiers With Dynamic Supply Under Controlled Thermal and Trapping States 212
New pulsed measurement setup for GaN and GaAs FETs characterization 211
Characterization and Modeling of RF GaN Switches Accounting for Trap-Induced Degradation Under Operating Regimes 211
A New Empirical Model for the Characterization of Low-Frequency Dispersive Effects in FET Electron Devices Accounting for Thermal Influence on the Trapping State 211
Validation and Comparison of PA models 210
A generalized CAD interface for nonlinear dynamic electron device models 209
An empirical behavioral model for RF PAs including self-heating 209
Evaluation of GaN FET power performance reduction due to nonlinear charge trapping effects 208
A Two-Port Nonlinear Dynamic Behavioral Model of RF PAs Subject to Wideband Load Modulation 207
Accurate modeling of electron device I/V characteristics through a simplified large-signal measurement setup 206
Active baseband drain-supply terminal load-pull of an X-band GaN MMIC PA 204
Large-signal GaN transistor characterization and modeling including charge trapping nonlinear dynamics 203
Isotrap Pulsed IV Characterization of GaN HEMTs for PA Design 203
On-Wafer I/V Measurement Setup for the Characterization of Low-Frequency Dispersion in Electron Devices 202
An Automated Measurement System Aimed to the Nonlinear Dynamic Characterization of Electron Device Time Dispersion 202
Empirical Equivalent-Circuit Modeling of mm-Wave GaN MMIC Varactors by Network Synthesis 200
GaN FET Nonlinear Modeling Based on Double Pulse I/V Characteristics 200
Measurement-Based Automatic Extraction of FET Parasitic Network by Linear Regression 200
Multi-bias nonlinear characterization of GaN FET trapping effects through a multiple pulse time domain network analyzer 200
Automated Microwave-Device Characterization Setup Based on a Technology-Independent Generalized Bias System 199
A simple non-quasi-static non-linear model of electron devices 199
Iso-thermal and iso-dynamic direct charge function characterization of GaN FET with single large-signal measurement 199
Nonlinear Dynamic Modeling of RF PAs Using Custom Vector Fitting Algorithm 199
Compact empirical modeling of nonlinear dynamic thermal effects in electron devices 198
Scalable nonlinear FET model based on a distributed parasitic network description 198
Characterization of the Nonlinear Thermal Resistance and Pulsed Thermal Dynamic Behavior of AlGaN–GaN HEMTs on SiC 198
Three Port Non-Linear Characterization of Power Amplifiers under Modulated Excitations Using a Vector Network Analyzer Platform 198
A Three-Port Nonlinear Dynamic Behavioral Model for Supply-Modulated RF PAs 196
A Procedure for GaN HEMT Charge Functions Extraction from Multi-Bias S-Parameters 196
Beam-Dependent Active Array Linearization by Global Feature-Based Machine Learning 195
An Active Bias Network for the Characterization of Low-Frequency Dispersion in High-Power Microwave Electron Devices 192
Accurate PHEMT Intermodulation Prediction in the Presence of Low-Frequency Dispersion Effects 192
Stability Analysis and Design Criteria of Paralleled-Device Power Amplifiers Under Large-Signal Regime 192
Design of 40-W AlGaN/GaN MMIC High Power Amplifiers for C-Band SAR Applications 191
Comparison of Electron Device Models Based on Operation-specific Metrics 191
Small-Signal Operation-Based Simplified Verification of Non-Linear Models for Millimeter-Wave Electron Devices 190
Scalable Equivalent Circuit FET Model for MMIC Design Identified Through FW-EM-Analyses 190
Accurate Small- and Large-Signal Predictions Using a Simple, Nonquasi-Static, Empirical Model 190
An Innovative Two-Source Large-Signal Measurement System for the Characterization of Low-Frequency Dispersive Effects in FETs 188
Two-Input Nonlinear Dynamic Model Inversion for the Linearization of Envelope-Tracking RF PAs 188
Thermal characterization of nonlinear charge trapping effects in GaN-FETs 187
Extraction of an Extrinsic Parasitic Network for Accurate mm-Wave FET Scalable Modeling on the Basis of Full-Wave EM Simulation 184
Broadband Measurement of Error Vector Magnitude for Microwave Vector Signal Generators Using a Vector Network Analyzer 183
Nonlinear Modelling of InP Devices for W-band Applications 182
Nonlinear charge trapping effects on pulsed I/V characteristics of GaN FETs 181
Nonlinear charge trapping effects on pulsed I/V characteristics of GaN FETs 181
A Reconfigurable Setup for the On-Wafer Characterization of the Dynamic RON of 600 V GaN Switches at Variable Operating Regimes 181
Nonlinear models of microwave power devices and circuits 180
Microwave Characterization of Trapping Effects in 100-nm GaN-on-Si HEMT Technology 180
Breakdown Walkout Investigation in Electron Devices Under Nonlinear Dynamic Regime 179
Nonlinear dispersive effects modelling for the accurate drain current prediction in GaN-based microwave power amplifiers 178
Characterization of GaN and GaAs FETs through a new pulsed measurement system 178
Simplified Validation of Non-Linear Models for Micro- and Millimeter-Wave Electron Devices 176
Modelling and Design of a Wideband 6-18 GHz GaN Resistive Mixer 176
Nonquasi-Static Large-Signal Model of GaN FETs through an Equivalent Voltage Approach 176
Active baseband drain-supply terminal load-pull of an X-band GaN MMIC PA 175
Improvement of PHEMT Intermodulation Prediction Through the Accurate Modelling of Low-Frequency Dispersion Effects 174
Supply-Modulated PA Performance Enhancement by Joint Optimization of RF Input and Supply Control 174
Supply-terminal 40 MHz BW characterization of impedance-like nonlinear functions for envelope tracking PAs 173
HB Analysis of Injection Locked Oscillators using commercial CAD tools 171
Electro-Thermal Characterization And Compact Modelling of GaN HEMTs for Microwave Applications 171
Totale 21.542
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Categoria #
all - tutte 81.023
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 81.023
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20225.670 0 0 0 715 877 717 723 687 763 262 394 532
2022/20233.075 341 423 156 370 167 235 93 182 552 88 263 205
2023/2024890 70 245 47 71 45 118 53 96 29 44 33 39
2024/20253.706 140 593 323 227 798 147 409 72 56 110 156 675
2025/20267.890 349 626 1.041 569 922 522 792 266 1.578 582 292 351
2026/20271.485 235 317 713 220 0 0 0 0 0 0 0 0
Totale 30.509