CRIS Current Research Information System

SANTARELLI, ALBERTO
 Distribuzione geografica
Salva come PNG Salva come JPEG
Continente #
NA - Nord America 11.438
EU - Europa 4.696
AS - Asia 2.935
AF - Africa 281
SA - Sud America 26
OC - Oceania 7
Continente sconosciuto - Info sul continente non disponibili 6
Totale 19.389
Salva come PNG Salva come JPEG
Nazione #
US - Stati Uniti d'America 11.423
GB - Regno Unito 1.172
IT - Italia 1.020
CN - Cina 901
VN - Vietnam 848
SG - Singapore 747
DE - Germania 668
SE - Svezia 496
UA - Ucraina 365
IN - India 268
IE - Irlanda 209
RU - Federazione Russa 200
FR - Francia 182
EE - Estonia 105
CI - Costa d'Avorio 93
JO - Giordania 87
ZA - Sudafrica 87
TG - Togo 63
CH - Svizzera 41
AT - Austria 39
BG - Bulgaria 35
FI - Finlandia 34
SC - Seychelles 32
BE - Belgio 27
NL - Olanda 25
JP - Giappone 22
ES - Italia 20
GR - Grecia 20
CA - Canada 14
BR - Brasile 13
ID - Indonesia 12
PL - Polonia 9
CZ - Repubblica Ceca 8
KR - Corea 8
CL - Cile 7
IL - Israele 7
LB - Libano 7
HR - Croazia 6
SI - Slovenia 6
IR - Iran 5
AU - Australia 4
PK - Pakistan 4
EU - Europa 3
HK - Hong Kong 3
NG - Nigeria 3
NZ - Nuova Zelanda 3
TR - Turchia 3
TW - Taiwan 3
UZ - Uzbekistan 3
A2 - ???statistics.table.value.countryCode.A2??? 2
AR - Argentina 2
BD - Bangladesh 2
EG - Egitto 2
PT - Portogallo 2
SA - Arabia Saudita 2
A1 - Anonimo 1
AZ - Azerbaigian 1
BO - Bolivia 1
CO - Colombia 1
DK - Danimarca 1
EC - Ecuador 1
ET - Etiopia 1
GT - Guatemala 1
HU - Ungheria 1
MT - Malta 1
MY - Malesia 1
NO - Norvegia 1
PE - Perù 1
PH - Filippine 1
RO - Romania 1
RS - Serbia 1
SK - Slovacchia (Repubblica Slovacca) 1
Totale 19.389
Salva come PNG Salva come JPEG
Città #
Ann Arbor 4.491
Southend 1.022
Fairfield 743
Chandler 732
Singapore 669
Houston 668
Santa Clara 560
Ashburn 522
Wilmington 506
Dong Ket 488
Woodbridge 373
Princeton 304
Seattle 302
Jacksonville 248
Cambridge 247
Bologna 243
Dublin 208
Boardman 188
Nanjing 131
Berlin 114
Westminster 114
Turin 106
Padova 97
Medford 96
Abidjan 93
Mantova 93
Amman 87
Jinan 68
Lomé 63
San Diego 60
Saint Petersburg 56
Beijing 53
Mülheim 50
Des Moines 43
Shenyang 39
Milan 35
Sofia 35
Nanchang 34
Vercelli 34
Hebei 33
New York 32
Vienna 32
Mahé 31
Braunschweig 30
Tianjin 30
Bern 29
Helsinki 28
Shanghai 25
Brussels 24
Changsha 24
Guangzhou 24
Jiaxing 22
Olalla 22
Taiyuan 22
Fremont 18
Hangzhou 18
Zhengzhou 18
Tokyo 16
Cesena 15
Haikou 15
Falls Church 14
London 14
Los Angeles 14
Redmond 14
Verona 14
Dearborn 13
Moscow 13
Rimini 13
Jakarta 12
Ningbo 12
Norwalk 12
San Lazzaro di Savena 12
Amsterdam 11
Frankfurt am Main 11
Fuzhou 11
Modena 11
San Giorgio Di Piano 11
São Paulo 11
Bühl 10
Kunming 10
Redwood City 10
San Francisco 10
Bresso 9
Chengdu 9
Forlì 9
Harbin 9
Reggio Emilia 9
Taizhou 9
Carpinteria 8
Faenza 8
Figino 8
Rome 8
Shenzhen 8
Toronto 8
Trento 8
Viserba 8
Wuhan 8
Hefei 7
Lanzhou 7
Paris 7
Totale 14.933
Salva come PNG Salva come JPEG
Nome #
Implementation of non-conventional nonlinear models for electron devices in commercial CAD tools 309
Nonlinear RF device modelling in the presence of low-frequency dispersive phenomena 306
A 150-W IR WPT Embedded System at 6.78-MHz for the Supply and Control of Linear Motors 273
Numerically efficient design of highly linear microwave power amplifiers 223
A Ka-Band MMIC LNA in GaN-on-Si 100-nm Technology for High Dynamic Range Radar Receivers 217
Charge-controlled GaN FET modeling by displacement current integration from frequency-domain NVNA measurements 202
Accurate EM-based Modeling of Cascode FETs 198
C Band DROs Using Microwave Bipolar Devices: Nonlinear Design Technique and Noise Model for Phase Noise Prediction 190
A Double-Pulse Technique for the Dynamic I/V Characterization of GaN FETs 190
A Nonquasi-Static Empirical Model of Electron Devices 184
Antenne integrate attive per terminali mobili ad alta efficienza 182
Global modeling of GaN HEMT resistive current including charge trapping and self-heating for multi-bias multi-class PA performance prediction 178
A New Empirical Model for the Characterization of Low-Frequency Dispersive Effects in FET Electron Devices Accounting for Thermal Influence on the Trapping State 178
A bias network for small duty-cycle fast-pulsed measurement of RF power transistors 176
A new technique for thermal resistance measurement in power electron devices 175
Accurate Nonlinear Electron Device Modelling for Cold FET Mixer Design 171
A Dual-Source Nonlinear Measurement System Oriented to the Empirical Characterization of Low-Frequency Dispersion in Microwave Electron Devices 171
A 40 watt C-band MMIC high power amplifier for space radar application exploiting a 0.25 um AlGaN/GaN on SiC process 167
Assessment of the Trap-Induced Insertion Loss Degradation of RF GaN Switches under Operating Regimes 167
Automated Microwave Device Characterization Set-Up Based on a Technology-Independent Generalized Bias System 166
A C-Band AlGaN-GaN MMIC HPA for SAR 165
Active baseband drain-supply terminal load-pull of an X-band GaN MMIC PA 161
Compact empirical modeling of nonlinear dynamic thermal effects in electron devices 160
Accurate modeling of electron device I/V characteristics through a simplified large-signal measurement setup 160
Characterization and Modeling of RF GaN Switches Accounting for Trap-Induced Degradation Under Operating Regimes 160
A Simple Technique for Measuring the Thermal Impedance and the Thermal Resistance of HBTs 158
A generalized CAD interface for nonlinear dynamic electron device models 158
Behavioral modeling of RF PAs under wideband load modulation 158
Dynamic RON Characterization Technique for the Evaluation of Thermal and Off-State Voltage Stress of GaN Switches 158
Critical Issues in Highly-Linear Power Amplifier Design 155
Automated Microwave-Device Characterization Setup Based on a Technology-Independent Generalized Bias System 154
Evaluation of GaN FET power performance reduction due to nonlinear charge trapping effects 154
An Automated Measurement System Aimed to the Nonlinear Dynamic Characterization of Electron Device Time Dispersion 153
An Active Bias Network for the Characterization of Low-Frequency Dispersion in High-Power Microwave Electron Devices 153
Pre-pulsing characterization of GaN PAs with dynamic supply 153
Scalable nonlinear FET model based on a distributed parasitic network description 152
Double-pulse characterization of GaN-on-Sapphire FETs for technology development 152
GaN FET Nonlinear Modeling Based on Double Pulse I/V Characteristics 152
New pulsed measurement setup for GaN and GaAs FETs characterization 151
A simple non-quasi-static non-linear model of electron devices 151
A distributed approach for millimetre-wave electron device modelingA distributed approach for millimetre-wave electron device modeling 150
Accurate Small- and Large-Signal Predictions Using a Simple, Nonquasi-Static, Empirical Model 150
Charge-conservative GaN HEMT nonlinear modeling from non-isodynamic multi-bias S-parameter measurements 150
Comparison of Electron Device Models Based on Operation-specific Metrics 148
Extraction of an Extrinsic Parasitic Network for Accurate mm-Wave FET Scalable Modeling on the Basis of Full-Wave EM Simulation 147
Nonlinear Dynamic Modeling of RF PAs Using Custom Vector Fitting Algorithm 147
GaN power amplifier digital predistortion by multi-objective optimization for maximum RF output power 147
A GaN HEMT Global Large-Signal Model Including Charge Trapping for Multibias Operation 146
Scalable Equivalent Circuit FET Model for MMIC Design Identified Through FW-EM-Analyses 145
A Prepulsing Technique for the Characterization of GaN Power Amplifiers With Dynamic Supply Under Controlled Thermal and Trapping States 145
Accurate PHEMT Intermodulation Prediction in the Presence of Low-Frequency Dispersion Effects 144
Three Port Non-Linear Characterization of Power Amplifiers under Modulated Excitations Using a Vector Network Analyzer Platform 144
Isotrap Pulsed IV Characterization of GaN HEMTs for PA Design 144
Multi-bias nonlinear characterization of GaN FET trapping effects through a multiple pulse time domain network analyzer 144
Validation and Comparison of PA models 142
An empirical behavioral model for RF PAs including self-heating 142
Small-Signal Operation-Based Simplified Verification of Non-Linear Models for Millimeter-Wave Electron Devices 141
Characterization of the Nonlinear Thermal Resistance and Pulsed Thermal Dynamic Behavior of AlGaN–GaN HEMTs on SiC 141
Large-signal GaN transistor characterization and modeling including charge trapping nonlinear dynamics 140
Modelling and Design of a Wideband 6-18 GHz GaN Resistive Mixer 139
Thermal characterization of nonlinear charge trapping effects in GaN-FETs 139
S-functions mixer modeling for linearization purposes 138
Nonlinear characterization of microwave power amplifiers with supply modulation 137
On-Wafer I/V Measurement Setup for the Characterization of Low-Frequency Dispersion in Electron Devices 136
Design of 40-W AlGaN/GaN MMIC High Power Amplifiers for C-Band SAR Applications 136
Nonquasi-Static Large-Signal Model of GaN FETs through an Equivalent Voltage Approach 136
A Procedure for GaN HEMT Charge Functions Extraction from Multi-Bias S-Parameters 136
Electron Device Model Parameter Identification Through Large-Signal-Predictive Small-Signal-Based Error Functions 135
Nonlinear Modelling of InP Devices for W-band Applications 135
Large-signal characterization of GaN-based transistors for accurate nonlinear modelling of dispersive effects 135
A Two-Port Nonlinear Dynamic Behavioral Model of RF PAs Subject to Wideband Load Modulation 135
Mixer-like modeling with dynamic baseband characterization for supply-modulated PAs 135
A Three-Port Nonlinear Dynamic Behavioral Model for Supply-Modulated RF PAs 134
Active baseband drain-supply terminal load-pull of an X-band GaN MMIC PA 134
Active Integrated Antennas for Efficient Mobile Terminals 133
Iso-thermal and iso-dynamic direct charge function characterization of GaN FET with single large-signal measurement 133
Automatic Extraction of Measurement-Based Large-Signal FET Models by Nonlinear Function Sampling 133
Microwave Characterization of Trapping Effects in 100-nm GaN-on-Si HEMT Technology 132
Breakdown Walkout Investigation in Electron Devices Under Nonlinear Dynamic Regime 132
Nonlinear models of microwave power devices and circuits 131
Two-Input Nonlinear Dynamic Model Inversion for the Linearization of Envelope-Tracking RF PAs 131
HB Analysis of Injection Locked Oscillators using commercial CAD tools 130
Measurement-Based Automatic Extraction of FET Parasitic Network by Linear Regression 130
Supply-terminal 40 MHz BW characterization of impedance-like nonlinear functions for envelope tracking PAs 128
Empirical Modeling of GaN FETs for Nonlinear Microwave Circuit Applications 127
Pulsed NVNA measurements for dynamic characterization of RF PAs 127
An Innovative Two-Source Large-Signal Measurement System for the Characterization of Low-Frequency Dispersive Effects in FETs 126
Improvement of PHEMT Intermodulation Prediction Through the Accurate Modelling of Low-Frequency Dispersion Effects 125
EM-based Modeling of Cascode FETs Suitable for MMIC Design 125
Stability Analysis and Design Criteria of Paralleled-Device Power Amplifiers Under Large-Signal Regime 125
Empirical Investigation on Time Dispersion of Microwave Electron Device Characteristics under Nonlinear Dynamic Operating Conditions 124
Scalable Equivalent Circuit PHEMT modelling using an EM-based parasitic network description 124
Characterization of GaN and GaAs FETs through a new pulsed measurement system 124
Electro-Thermal Characterization And Compact Modelling of GaN HEMTs for Microwave Applications 124
Nonlinear charge trapping effects on pulsed I/V characteristics of GaN FETs 124
Nonlinear Thermal Resistance Characterization for Compact Electrothermal GaN HEMT Modelling 121
Supply-Modulated PA Performance Enhancement by Joint Optimization of RF Input and Supply Control 121
Broadband error vector magnitude characterization of a GaN power amplifier using a vector network analyzer 121
Optimal Function Approximation For Empirical Look-Up-Table Device Models 120
Nonlinear dispersive effects modelling for the accurate drain current prediction in GaN-based microwave power amplifiers 120
Totale 15.229
Salva come PNG Salva come JPEG
Categoria #
all - tutte 47.004
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 47.004
Salva come PNG Salva come JPEG


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20201.600 0 0 0 0 0 0 376 385 397 198 101 143
2020/20212.049 336 118 65 68 20 89 52 134 224 107 120 716
2021/20227.003 454 92 787 715 877 717 723 687 763 262 394 532
2022/20233.075 341 423 156 370 167 235 93 182 552 88 263 205
2023/2024890 70 245 47 71 45 118 53 96 29 44 33 39
2024/20252.239 140 593 323 227 798 147 11 0 0 0 0 0
Totale 19.667