CRIS Current Research Information System

SANTARELLI, ALBERTO
 Distribuzione geografica
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Continente #
NA - Nord America 13.833
AS - Asia 8.347
EU - Europa 5.904
AF - Africa 488
SA - Sud America 475
Continente sconosciuto - Info sul continente non disponibili 337
OC - Oceania 12
Totale 29.396
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Nazione #
US - Stati Uniti d'America 13.713
SG - Singapore 2.408
VN - Vietnam 2.261
CN - Cina 1.988
IT - Italia 1.489
GB - Regno Unito 1.209
DE - Germania 788
SE - Svezia 529
HK - Hong Kong 491
UA - Ucraina 383
IN - India 362
FR - Francia 361
BR - Brasile 298
RU - Federazione Russa 298
IE - Irlanda 220
CI - Costa d'Avorio 203
JP - Giappone 160
KR - Corea 143
ZA - Sudafrica 117
BD - Bangladesh 114
FI - Finlandia 109
EE - Estonia 106
JO - Giordania 91
NL - Olanda 81
CA - Canada 73
AR - Argentina 63
TG - Togo 63
PH - Filippine 55
SC - Seychelles 54
AT - Austria 53
CH - Svizzera 50
TH - Thailandia 46
ES - Italia 44
TW - Taiwan 39
BE - Belgio 36
BG - Bulgaria 36
ID - Indonesia 36
IQ - Iraq 30
PL - Polonia 28
BO - Bolivia 26
EC - Ecuador 25
PK - Pakistan 25
GR - Grecia 23
CL - Cile 20
MX - Messico 18
CO - Colombia 14
TR - Turchia 14
SA - Arabia Saudita 12
UZ - Uzbekistan 11
VE - Venezuela 11
CZ - Repubblica Ceca 10
KE - Kenya 9
LB - Libano 9
PY - Paraguay 9
AU - Australia 7
DZ - Algeria 7
EG - Egitto 7
HR - Croazia 7
IL - Israele 7
IR - Iran 7
LT - Lituania 7
MY - Malesia 7
NP - Nepal 7
JM - Giamaica 6
NG - Nigeria 6
PT - Portogallo 6
RO - Romania 6
SI - Slovenia 6
ET - Etiopia 5
MA - Marocco 5
PE - Perù 5
CR - Costa Rica 4
MD - Moldavia 4
UY - Uruguay 4
AZ - Azerbaigian 3
EU - Europa 3
GE - Georgia 3
NZ - Nuova Zelanda 3
SN - Senegal 3
TN - Tunisia 3
TT - Trinidad e Tobago 3
A2 - ???statistics.table.value.countryCode.A2??? 2
AL - Albania 2
BA - Bosnia-Erzegovina 2
BH - Bahrain 2
BZ - Belize 2
CU - Cuba 2
DK - Danimarca 2
DO - Repubblica Dominicana 2
GH - Ghana 2
GT - Guatemala 2
HN - Honduras 2
MT - Malta 2
OM - Oman 2
A1 - Anonimo 1
AE - Emirati Arabi Uniti 1
AM - Armenia 1
AO - Angola 1
BM - Bermuda 1
BN - Brunei Darussalam 1
Totale 29.037
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Città #
Ann Arbor 4.491
Singapore 1.674
Southend 1.022
Fairfield 743
Chandler 732
Ashburn 699
Houston 678
Santa Clara 602
San Jose 512
Wilmington 506
Dong Ket 488
Hong Kong 459
Dallas 415
Ho Chi Minh City 409
Woodbridge 373
Hanoi 332
Bologna 331
Seattle 307
Princeton 304
Hefei 299
Jacksonville 250
Cambridge 249
Beijing 245
Dublin 220
Boardman 218
Abidjan 203
Council Bluffs 152
Lauterbourg 145
Nanjing 134
Tokyo 129
Milan 118
Berlin 114
Seoul 114
Turin 114
Westminster 114
Los Angeles 105
Padova 99
Mantova 97
Medford 96
New York 95
Amman 90
Buffalo 86
Jinan 71
San Diego 64
Lomé 63
Munich 61
Redondo Beach 60
Helsinki 57
Saint Petersburg 56
Haiphong 53
Da Nang 50
Mülheim 50
Des Moines 46
Rimini 46
São Paulo 46
Frankfurt am Main 43
Guangzhou 43
Rome 42
Shanghai 41
Shenyang 41
Vienna 39
Chicago 38
Changsha 36
Nanchang 35
Sofia 35
Vercelli 34
Cesena 33
Hebei 33
Tianjin 32
Turku 32
Mahé 31
Braunschweig 30
Brussels 30
Orem 30
Bern 29
Hangzhou 29
London 27
Amsterdam 26
Bengaluru 26
Zhengzhou 26
Montreal 25
La Paz 24
San Francisco 24
Taiyuan 23
Jiaxing 22
Olalla 22
San Lazzaro di Savena 22
Verona 22
Chennai 21
Johannesburg 21
Phoenix 21
Can Tho 20
Lappeenranta 20
Warsaw 20
Toronto 19
Fremont 18
Hải Dương 18
Baghdad 17
Bangkok 17
Biên Hòa 17
Totale 20.540
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Nome #
Nonlinear RF device modelling in the presence of low-frequency dispersive phenomena 386
Implementation of non-conventional nonlinear models for electron devices in commercial CAD tools 368
A 150-W IR WPT Embedded System at 6.78-MHz for the Supply and Control of Linear Motors 359
A Ka-Band MMIC LNA in GaN-on-Si 100-nm Technology for High Dynamic Range Radar Receivers 315
C Band DROs Using Microwave Bipolar Devices: Nonlinear Design Technique and Noise Model for Phase Noise Prediction 304
Numerically efficient design of highly linear microwave power amplifiers 286
S-functions mixer modeling for linearization purposes 286
Charge-controlled GaN FET modeling by displacement current integration from frequency-domain NVNA measurements 275
A GaN HEMT Global Large-Signal Model Including Charge Trapping for Multibias Operation 262
A VNA-Based Wideband Measurement System for Large-Signal Characterization of Multiport Circuits 254
A Double-Pulse Technique for the Dynamic I/V Characterization of GaN FETs 250
A Behavioral Approach to Equivalent-Circuit Modeling of GaN MMIC Varactor Cells 249
Global modeling of GaN HEMT resistive current including charge trapping and self-heating for multi-bias multi-class PA performance prediction 240
Enhancing K-Band Dual-Input Doherty PA Performance by Bayesian Optimization 239
Dynamic RON Characterization Technique for the Evaluation of Thermal and Off-State Voltage Stress of GaN Switches 238
A bias network for small duty-cycle fast-pulsed measurement of RF power transistors 233
A 40 watt C-band MMIC high power amplifier for space radar application exploiting a 0.25 um AlGaN/GaN on SiC process 231
Accurate EM-based Modeling of Cascode FETs 228
Antenne integrate attive per terminali mobili ad alta efficienza 225
Critical Issues in Highly-Linear Power Amplifier Design 223
A Nonquasi-Static Empirical Model of Electron Devices 222
A Simple Technique for Measuring the Thermal Impedance and the Thermal Resistance of HBTs 220
Multitone Multiharmonic Scattering Parameters for the Characterization of Nonlinear Networks 219
GaN power amplifier digital predistortion by multi-objective optimization for maximum RF output power 219
Assessment of the Trap-Induced Insertion Loss Degradation of RF GaN Switches under Operating Regimes 218
A C-Band AlGaN-GaN MMIC HPA for SAR 218
Charge-conservative GaN HEMT nonlinear modeling from non-isodynamic multi-bias S-parameter measurements 218
Automated Microwave Device Characterization Set-Up Based on a Technology-Independent Generalized Bias System 217
Behavioral modeling of RF PAs under wideband load modulation 217
A new technique for thermal resistance measurement in power electron devices 216
Pre-pulsing characterization of GaN PAs with dynamic supply 216
A distributed approach for millimetre-wave electron device modelingA distributed approach for millimetre-wave electron device modeling 212
A Dual-Source Nonlinear Measurement System Oriented to the Empirical Characterization of Low-Frequency Dispersion in Microwave Electron Devices 212
Automatic Extraction of Measurement-Based Large-Signal FET Models by Nonlinear Function Sampling 212
Error vector magnitude measurement for power amplifiers under wideband load impedance mismatch: System-level analysis and VNA-based implementation 211
Automatic Optimization of Input Split and Bias Voltage in Digitally Controlled Dual-Input Doherty RF PAs 209
Joint Dual-Input Digital Predistortion of Supply-Modulated RF PA by Surrogate-Based Multi-Objective Optimization 209
Accurate Nonlinear Electron Device Modelling for Cold FET Mixer Design 207
A New Empirical Model for the Characterization of Low-Frequency Dispersive Effects in FET Electron Devices Accounting for Thermal Influence on the Trapping State 207
Validation and Comparison of PA models 206
A Prepulsing Technique for the Characterization of GaN Power Amplifiers With Dynamic Supply Under Controlled Thermal and Trapping States 206
An empirical behavioral model for RF PAs including self-heating 205
Characterization and Modeling of RF GaN Switches Accounting for Trap-Induced Degradation Under Operating Regimes 205
New pulsed measurement setup for GaN and GaAs FETs characterization 204
Double-pulse characterization of GaN-on-Sapphire FETs for technology development 204
A generalized CAD interface for nonlinear dynamic electron device models 201
Evaluation of GaN FET power performance reduction due to nonlinear charge trapping effects 201
Active baseband drain-supply terminal load-pull of an X-band GaN MMIC PA 200
Accurate modeling of electron device I/V characteristics through a simplified large-signal measurement setup 199
On-Wafer I/V Measurement Setup for the Characterization of Low-Frequency Dispersion in Electron Devices 198
A Two-Port Nonlinear Dynamic Behavioral Model of RF PAs Subject to Wideband Load Modulation 198
An Automated Measurement System Aimed to the Nonlinear Dynamic Characterization of Electron Device Time Dispersion 197
Empirical Equivalent-Circuit Modeling of mm-Wave GaN MMIC Varactors by Network Synthesis 196
Large-signal GaN transistor characterization and modeling including charge trapping nonlinear dynamics 196
Compact empirical modeling of nonlinear dynamic thermal effects in electron devices 194
GaN FET Nonlinear Modeling Based on Double Pulse I/V Characteristics 194
Isotrap Pulsed IV Characterization of GaN HEMTs for PA Design 194
Multi-bias nonlinear characterization of GaN FET trapping effects through a multiple pulse time domain network analyzer 194
Scalable nonlinear FET model based on a distributed parasitic network description 193
Nonlinear Dynamic Modeling of RF PAs Using Custom Vector Fitting Algorithm 193
Measurement-Based Automatic Extraction of FET Parasitic Network by Linear Regression 193
Automated Microwave-Device Characterization Setup Based on a Technology-Independent Generalized Bias System 192
A simple non-quasi-static non-linear model of electron devices 191
Three Port Non-Linear Characterization of Power Amplifiers under Modulated Excitations Using a Vector Network Analyzer Platform 191
Characterization of the Nonlinear Thermal Resistance and Pulsed Thermal Dynamic Behavior of AlGaN–GaN HEMTs on SiC 190
A Procedure for GaN HEMT Charge Functions Extraction from Multi-Bias S-Parameters 190
An Active Bias Network for the Characterization of Low-Frequency Dispersion in High-Power Microwave Electron Devices 189
Accurate PHEMT Intermodulation Prediction in the Presence of Low-Frequency Dispersion Effects 189
Iso-thermal and iso-dynamic direct charge function characterization of GaN FET with single large-signal measurement 189
Beam-Dependent Active Array Linearization by Global Feature-Based Machine Learning 188
A Three-Port Nonlinear Dynamic Behavioral Model for Supply-Modulated RF PAs 188
Small-Signal Operation-Based Simplified Verification of Non-Linear Models for Millimeter-Wave Electron Devices 187
Stability Analysis and Design Criteria of Paralleled-Device Power Amplifiers Under Large-Signal Regime 187
Comparison of Electron Device Models Based on Operation-specific Metrics 186
Scalable Equivalent Circuit FET Model for MMIC Design Identified Through FW-EM-Analyses 185
Accurate Small- and Large-Signal Predictions Using a Simple, Nonquasi-Static, Empirical Model 182
Design of 40-W AlGaN/GaN MMIC High Power Amplifiers for C-Band SAR Applications 181
Two-Input Nonlinear Dynamic Model Inversion for the Linearization of Envelope-Tracking RF PAs 181
Thermal characterization of nonlinear charge trapping effects in GaN-FETs 180
A Reconfigurable Setup for the On-Wafer Characterization of the Dynamic RON of 600 V GaN Switches at Variable Operating Regimes 177
Broadband Measurement of Error Vector Magnitude for Microwave Vector Signal Generators Using a Vector Network Analyzer 176
Nonlinear models of microwave power devices and circuits 176
Extraction of an Extrinsic Parasitic Network for Accurate mm-Wave FET Scalable Modeling on the Basis of Full-Wave EM Simulation 176
An Innovative Two-Source Large-Signal Measurement System for the Characterization of Low-Frequency Dispersive Effects in FETs 175
Simplified Validation of Non-Linear Models for Micro- and Millimeter-Wave Electron Devices 174
Nonlinear charge trapping effects on pulsed I/V characteristics of GaN FETs 174
Nonlinear charge trapping effects on pulsed I/V characteristics of GaN FETs 174
Nonlinear Modelling of InP Devices for W-band Applications 173
Characterization of GaN and GaAs FETs through a new pulsed measurement system 173
Microwave Characterization of Trapping Effects in 100-nm GaN-on-Si HEMT Technology 173
Modelling and Design of a Wideband 6-18 GHz GaN Resistive Mixer 170
Nonquasi-Static Large-Signal Model of GaN FETs through an Equivalent Voltage Approach 170
Breakdown Walkout Investigation in Electron Devices Under Nonlinear Dynamic Regime 170
Active baseband drain-supply terminal load-pull of an X-band GaN MMIC PA 170
Nonlinear characterization of microwave power amplifiers with supply modulation 168
Nonlinear dispersive effects modelling for the accurate drain current prediction in GaN-based microwave power amplifiers 167
Supply-Modulated PA Performance Enhancement by Joint Optimization of RF Input and Supply Control 167
Electro-Thermal Characterization And Compact Modelling of GaN HEMTs for Microwave Applications 166
HB Analysis of Injection Locked Oscillators using commercial CAD tools 165
Wideband Active Load-Pull by Device Output Match Compensation Using a Vector Network Analyzer 165
Totale 20.866
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Categoria #
all - tutte 77.456
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 77.456
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20226.549 0 92 787 715 877 717 723 687 763 262 394 532
2022/20233.075 341 423 156 370 167 235 93 182 552 88 263 205
2023/2024890 70 245 47 71 45 118 53 96 29 44 33 39
2024/20253.706 140 593 323 227 798 147 409 72 56 110 156 675
2025/20267.890 349 626 1.041 569 922 522 792 266 1.578 582 292 351
2026/2027372 235 137 0 0 0 0 0 0 0 0 0 0
Totale 29.396