A large-signal measurement setup with sinusoidal excitation is used for the characterization of low-frequency dispersive phenomena in III-V FET devices. This low-cost setup operates in the MHz frequency range and its components are easily available in most research laboratories. A dispersive model of the dynamic drain current, taking into account the non linear behaviour of charge trapping phenomena, is identified for an AlGaN/GaN HEMT on the basis of the proposed characterization setup.
Large-signal characterization of GaN-based transistors for accurate nonlinear modelling of dispersive effects / A. Santarelli; R. Cignani; V. Di Giacomo; S. D’Angelo; D. Niessen; F. Filicori. - STAMPA. - (2010), pp. 115-118. (Intervento presentato al convegno Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMiC 2010) tenutosi a Chalmers University of Technology, Göteborg (Sweden) nel April, 26-27th, 2010) [10.1109/INMMIC.2010.5480122].
Large-signal characterization of GaN-based transistors for accurate nonlinear modelling of dispersive effects
SANTARELLI, ALBERTO;CIGNANI, RAFAEL;FILICORI, FABIO
2010
Abstract
A large-signal measurement setup with sinusoidal excitation is used for the characterization of low-frequency dispersive phenomena in III-V FET devices. This low-cost setup operates in the MHz frequency range and its components are easily available in most research laboratories. A dispersive model of the dynamic drain current, taking into account the non linear behaviour of charge trapping phenomena, is identified for an AlGaN/GaN HEMT on the basis of the proposed characterization setup.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
