A large-signal measurement setup with sinusoidal excitation is used for the characterization of low-frequency dispersive phenomena in III-V FET devices. This low-cost setup operates in the MHz frequency range and its components are easily available in most research laboratories. A dispersive model of the dynamic drain current, taking into account the non linear behaviour of charge trapping phenomena, is identified for an AlGaN/GaN HEMT on the basis of the proposed characterization setup.
A. Santarelli, R. Cignani, V. Di Giacomo, S. D’Angelo, D. Niessen, F. Filicori (2010). Large-signal characterization of GaN-based transistors for accurate nonlinear modelling of dispersive effects. s.l : IEEE [10.1109/INMMIC.2010.5480122].
Large-signal characterization of GaN-based transistors for accurate nonlinear modelling of dispersive effects
SANTARELLI, ALBERTO;CIGNANI, RAFAEL;FILICORI, FABIO
2010
Abstract
A large-signal measurement setup with sinusoidal excitation is used for the characterization of low-frequency dispersive phenomena in III-V FET devices. This low-cost setup operates in the MHz frequency range and its components are easily available in most research laboratories. A dispersive model of the dynamic drain current, taking into account the non linear behaviour of charge trapping phenomena, is identified for an AlGaN/GaN HEMT on the basis of the proposed characterization setup.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
