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EnglishA large-signal measurement setup with sinusoidal excitation is used for the characterization of low-frequency dispersive phenomena in III-V FET devices. This low-cost setup operates in the MHz frequency range and its components are easily available in most research laboratories. A dispersive model of the dynamic drain current, taking into account the non linear behaviour of charge trapping phenomena, is identified for an AlGaN/GaN HEMT on the basis of the proposed characterization setup.
| Titolo: | Large-signal characterization of GaN-based transistors for accurate nonlinear modelling of dispersive effects | |
| Autore/i: | SANTARELLI, ALBERTO; CIGNANI, RAFAEL; V. Di Giacomo; S. D’Angelo; D. Niessen; FILICORI, FABIO | |
| Autore/i Unibo: | ||
| Anno: | 2010 | |
| Titolo del libro: | 2010 Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMiC 2010) - Conference Proceedings | |
| Pagina iniziale: | 115 | |
| Pagina finale: | 118 | |
| Digital Object Identifier (DOI): | http://dx.doi.org/10.1109/INMMIC.2010.5480122 | |
| Abstract: | A large-signal measurement setup with sinusoidal excitation is used for the characterization of low-frequency dispersive phenomena in III-V FET devices. This low-cost setup operates in the MHz frequency range and its components are easily available in most research laboratories. A dispersive model of the dynamic drain current, taking into account the non linear behaviour of charge trapping phenomena, is identified for an AlGaN/GaN HEMT on the basis of the proposed characterization setup. | |
| Data prodotto definitivo in UGOV: | 21-feb-2011 | |
| Appare nelle tipologie: | 4.01 Contributo in Atti di convegno |
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