An original empirical approach to deal with nonlinear dynamic thermal effects in electron devices is proposed. The new technology-independent approach is very compact and easy to implement in computer-aided design tools. Therefore, it can be easily coupled with electrical device models in order to obtain accurate electrothermal models that are suitable for nonconstant-envelope RF applications (e.g., pulsed radar). Model equations and identification procedures are derived in this paper. Validation results and comparison with simplified models are also presented both for a simulated field-effect transistor device, as well as for a real heterojunction bipolar transistor device.
I. Melczarsky, J. A. Lonac, F. Filicori, A. Santarelli (2008). Compact empirical modeling of nonlinear dynamic thermal effects in electron devices. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 56, 2017-2024 [10.1109/TMTT.2008.2001956].
Compact empirical modeling of nonlinear dynamic thermal effects in electron devices
MELCZARSKY, ILAN;FILICORI, FABIO;SANTARELLI, ALBERTO
2008
Abstract
An original empirical approach to deal with nonlinear dynamic thermal effects in electron devices is proposed. The new technology-independent approach is very compact and easy to implement in computer-aided design tools. Therefore, it can be easily coupled with electrical device models in order to obtain accurate electrothermal models that are suitable for nonconstant-envelope RF applications (e.g., pulsed radar). Model equations and identification procedures are derived in this paper. Validation results and comparison with simplified models are also presented both for a simulated field-effect transistor device, as well as for a real heterojunction bipolar transistor device.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
