A fully automatic procedure for the empirical extraction of field-effect transistors (FETs) parasitic network is proposed. By exploiting a grid search approach combined with linear regression, the identification requires Y-parameter measurements at a very few (even just one) bias points. The method is verified in simulation and applied to measurements of a 250-nm GaN high-electron-mobility transistor (HEMT).
Gibiino G.P., Santarelli A., Cignani R., Traverso P.A., Filicori F. (2019). Measurement-Based Automatic Extraction of FET Parasitic Network by Linear Regression. IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 29(9), 598-600 [10.1109/LMWC.2019.2933095].
Measurement-Based Automatic Extraction of FET Parasitic Network by Linear Regression
Gibiino G. P.;Santarelli A.;Cignani R.;Traverso P. A.;Filicori F.
2019
Abstract
A fully automatic procedure for the empirical extraction of field-effect transistors (FETs) parasitic network is proposed. By exploiting a grid search approach combined with linear regression, the identification requires Y-parameter measurements at a very few (even just one) bias points. The method is verified in simulation and applied to measurements of a 250-nm GaN high-electron-mobility transistor (HEMT).I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
