A recently published double-pulse technique, useful for the isodynamic pulsed IV characterization of GaN FETs at a fixed charge trapping state, is here applied to the first prototypes of 0.5 μm GaN-on-Sapphire FETs manufactured by the Polish Institute of Electronics Materials Technology. The measurements presented in this work depict a practical method for characterizing trap-related lag effects in GaN FETs, and are intended both for modeling as well as for assisting further technology developments.
Gibiino, G.P., Barmuta, P., Cignani, R., Niessen, D., Lewandowski, A., Dobrzanski, L., et al. (2016). Double-pulse characterization of GaN-on-Sapphire FETs for technology development. Institute of Electrical and Electronics Engineers Inc. [10.1109/MIKON.2016.7492072].
Double-pulse characterization of GaN-on-Sapphire FETs for technology development
GIBIINO, GIAN PIERO;CIGNANI, RAFAEL;NIESSEN, DANIEL;SANTARELLI, ALBERTO
2016
Abstract
A recently published double-pulse technique, useful for the isodynamic pulsed IV characterization of GaN FETs at a fixed charge trapping state, is here applied to the first prototypes of 0.5 μm GaN-on-Sapphire FETs manufactured by the Polish Institute of Electronics Materials Technology. The measurements presented in this work depict a practical method for characterizing trap-related lag effects in GaN FETs, and are intended both for modeling as well as for assisting further technology developments.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
