A state-space empirical nonlinear model for GaN-based field-effect transistors (FETs) is defined, along with the associated identification procedures based on a recently published double pulse measurement technique. Charge trapping phenomena are dealt with in terms of a nonlinear state equation, which describes the rate of change of the trap state as a function of its actual distance from the corresponding steady state. Model experimental validation is carried out, after on-wafer characterization of a 1-mm AlGaN–GaN on SiC FET, both under strong and mild nonlinear operation.
Alberto Santarelli, Daniel Niessen, Rafael Cignani, Gian Piero Gibiino, Pier Andrea Traverso, Corrado Florian, et al. (2014). GaN FET Nonlinear Modeling Based on Double Pulse I/V Characteristics. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, Volume: 62 , Issue: 12 , Part: 2, 3262-3273 [10.1109/TMTT.2014.2364236].
GaN FET Nonlinear Modeling Based on Double Pulse I/V Characteristics
SANTARELLI, ALBERTO;NIESSEN, DANIEL;CIGNANI, RAFAEL;GIBIINO, GIAN PIERO;TRAVERSO, PIER ANDREA;FLORIAN, CORRADO;FILICORI, FABIO
2014
Abstract
A state-space empirical nonlinear model for GaN-based field-effect transistors (FETs) is defined, along with the associated identification procedures based on a recently published double pulse measurement technique. Charge trapping phenomena are dealt with in terms of a nonlinear state equation, which describes the rate of change of the trap state as a function of its actual distance from the corresponding steady state. Model experimental validation is carried out, after on-wafer characterization of a 1-mm AlGaN–GaN on SiC FET, both under strong and mild nonlinear operation.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
