A state-space empirical nonlinear model for GaN-based field-effect transistors (FETs) is defined, along with the associated identification procedures based on a recently published double pulse measurement technique. Charge trapping phenomena are dealt with in terms of a nonlinear state equation, which describes the rate of change of the trap state as a function of its actual distance from the corresponding steady state. Model experimental validation is carried out, after on-wafer characterization of a 1-mm AlGaN–GaN on SiC FET, both under strong and mild nonlinear operation.

GaN FET Nonlinear Modeling Based on Double Pulse I/V Characteristics

SANTARELLI, ALBERTO;NIESSEN, DANIEL;CIGNANI, RAFAEL;GIBIINO, GIAN PIERO;TRAVERSO, PIER ANDREA;FLORIAN, CORRADO;FILICORI, FABIO
2014

Abstract

A state-space empirical nonlinear model for GaN-based field-effect transistors (FETs) is defined, along with the associated identification procedures based on a recently published double pulse measurement technique. Charge trapping phenomena are dealt with in terms of a nonlinear state equation, which describes the rate of change of the trap state as a function of its actual distance from the corresponding steady state. Model experimental validation is carried out, after on-wafer characterization of a 1-mm AlGaN–GaN on SiC FET, both under strong and mild nonlinear operation.
2014
Alberto Santarelli;Daniel Niessen;Rafael Cignani;Gian Piero Gibiino;Pier Andrea Traverso;Corrado Florian;Dominique M. M.-P. Schreurs;Fabio Filicori
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/383275
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