A new setup is proposed for the measurement of current-voltage pulsed characteristics of electron devices. The main advantages of the system consist in: shorter pulse widths through generation in a 50-Ω environment, simple average current monitoring through separation of the direct and alternate current paths, setting of average voltage values independently of pulse amplitudes and duty cycle, and stability of the setup guaranteed by wide-band dissipative terminations. The system is used for the characterization of dispersive effects due to carrier energy traps and thermal phenomena in GaAs and GaN on SiC field effect transistors. The basic differences between the two technologies are highlighted in the paper. © 2012 Cambridge University Press and the European Microwave Association.

Alberto Santarelli, Rafael Cignani, Daniel Niessen, Pier Andrea Traverso, Fabio Filicori (2012). New pulsed measurement setup for GaN and GaAs FETs characterization. INTERNATIONAL JOURNAL OF MICROWAVE AND WIRELESS TECHNOLOGIES, 4, 387-397 [10.1017/S1759078712000335].

New pulsed measurement setup for GaN and GaAs FETs characterization

SANTARELLI, ALBERTO;CIGNANI, RAFAEL;NIESSEN, DANIEL;TRAVERSO, PIER ANDREA;FILICORI, FABIO
2012

Abstract

A new setup is proposed for the measurement of current-voltage pulsed characteristics of electron devices. The main advantages of the system consist in: shorter pulse widths through generation in a 50-Ω environment, simple average current monitoring through separation of the direct and alternate current paths, setting of average voltage values independently of pulse amplitudes and duty cycle, and stability of the setup guaranteed by wide-band dissipative terminations. The system is used for the characterization of dispersive effects due to carrier energy traps and thermal phenomena in GaAs and GaN on SiC field effect transistors. The basic differences between the two technologies are highlighted in the paper. © 2012 Cambridge University Press and the European Microwave Association.
2012
Alberto Santarelli, Rafael Cignani, Daniel Niessen, Pier Andrea Traverso, Fabio Filicori (2012). New pulsed measurement setup for GaN and GaAs FETs characterization. INTERNATIONAL JOURNAL OF MICROWAVE AND WIRELESS TECHNOLOGIES, 4, 387-397 [10.1017/S1759078712000335].
Alberto Santarelli;Rafael Cignani;Daniel Niessen;Pier Andrea Traverso;Fabio Filicori
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/153815
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