Trapping effects of a state-of-the-art 100-nm GaN-on-Si high-electron mobility transistor (HEMT) process for radio-frequency (RF) applications are characterized for the first time. Considering an operation with high peak-to-average power ratio (PAPR) signals, pulsed-RF measurements give a more direct understanding of the dynamic trap behavior than the third-order intermodulation products (IM3). The experimental data are used for estimating the time constants describing the transients in the presence of signals with different PAPRs.
Microwave Characterization of Trapping Effects in 100-nm GaN-on-Si HEMT Technology / Gibiino G.P.; Angelotti A.M.; Santarelli A.; Florian C.. - In: IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS. - ISSN 1531-1309. - STAMPA. - 29:9(2019), pp. 8805159.604-8805159.606. [10.1109/LMWC.2019.2933186]
Microwave Characterization of Trapping Effects in 100-nm GaN-on-Si HEMT Technology
Gibiino G. P.;Angelotti A. M.;Santarelli A.;Florian C.
2019
Abstract
Trapping effects of a state-of-the-art 100-nm GaN-on-Si high-electron mobility transistor (HEMT) process for radio-frequency (RF) applications are characterized for the first time. Considering an operation with high peak-to-average power ratio (PAPR) signals, pulsed-RF measurements give a more direct understanding of the dynamic trap behavior than the third-order intermodulation products (IM3). The experimental data are used for estimating the time constants describing the transients in the presence of signals with different PAPRs.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
