A new modeling approach has been developed for the accurate prediction of the dynamic drain current of GaN FETs. This is accomplished by separation of the low (LF) and high (HF) frequency transistor dynamic behavior.
A. Santarelli, R. Cignani, D. Niessen, S. D’Angelo, F. Filicori (2011). Electro-Thermal Characterization And Compact Modelling of GaN HEMTs for Microwave Applications. MODUGNO (BA) : Polibapress/Arti Grafiche Favia.
Electro-Thermal Characterization And Compact Modelling of GaN HEMTs for Microwave Applications
SANTARELLI, ALBERTO;CIGNANI, RAFAEL;NIESSEN, DANIEL;FILICORI, FABIO
2011
Abstract
A new modeling approach has been developed for the accurate prediction of the dynamic drain current of GaN FETs. This is accomplished by separation of the low (LF) and high (HF) frequency transistor dynamic behavior.File in questo prodotto:
Eventuali allegati, non sono esposti
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
