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EnglishIn this paper, an automated laboratory setup for the characterization of microwave and millimeter-wave electron devices under dc small- and large-signal operations is described, which is based on a generalized technology-independent bias system. The biasing parameters adopted, which are a linear combination between currents and voltages at the device ports, allow for a complete characterization of the desired empirical data (e.g., multifrequency S-matrix) throughout all the regions, in which the quiescent operation of the device can be conventionally divided without any need for switching between the different biasing strategies. The lookup tables of the experimental data obtained, which are carried out homogeneously versus the same couple of bias parameters of the quiescent regions investigated independently, are particularly suitable for the characterization of the empirical nonlinear dynamic models for the electron device.
| Titolo: | Automated Microwave-Device Characterization Setup Based on a Technology-Independent Generalized Bias System | |
| Autore/i: | TRAVERSO, PIER ANDREA; A. Raffo; M. Pirazzini; SANTARELLI, ALBERTO; FILICORI, FABIO | |
| Autore/i Unibo: | ||
| Anno: | 2006 | |
| Rivista: | ||
| Digital Object Identifier (DOI): | http://dx.doi.org/10.1109/TIM.2006.877717 | |
| Abstract: | In this paper, an automated laboratory setup for the characterization of microwave and millimeter-wave electron devices under dc small- and large-signal operations is described, which is based on a generalized technology-independent bias system. The biasing parameters adopted, which are a linear combination between currents and voltages at the device ports, allow for a complete characterization of the desired empirical data (e.g., multifrequency S-matrix) throughout all the regions, in which the quiescent operation of the device can be conventionally divided without any need for switching between the different biasing strategies. The lookup tables of the experimental data obtained, which are carried out homogeneously versus the same couple of bias parameters of the quiescent regions investigated independently, are particularly suitable for the characterization of the empirical nonlinear dynamic models for the electron device. | |
| Data prodotto definitivo in UGOV: | 2007-02-21 13:11:05 | |
| Appare nelle tipologie: | 1.01 Articolo in rivista |
File in questo prodotto:
http://hdl.handle.net/11585/39456
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