A nonlinear empirical model is here adopted to model the cold-FET behaviour of a GaAs PHEMT, in the framework of a resistive mixer application. The model, purely mathematical and technology independent, is suitably identified in the device operative region of interest and is validated in large-signal conditions by exploiting a measurements setup based on LSVNA.
Accurate Nonlinear Electron Device Modelling for Cold FET Mixer Design
SANTARELLI, ALBERTO;TRAVERSO, PIER ANDREA;FILICORI, FABIO;
2008
Abstract
A nonlinear empirical model is here adopted to model the cold-FET behaviour of a GaAs PHEMT, in the framework of a resistive mixer application. The model, purely mathematical and technology independent, is suitably identified in the device operative region of interest and is validated in large-signal conditions by exploiting a measurements setup based on LSVNA.File in questo prodotto:
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