A nonlinear empirical model is here adopted to model the cold-FET behaviour of a GaAs PHEMT, in the framework of a resistive mixer application. The model, purely mathematical and technology independent, is suitably identified in the device operative region of interest and is validated in large-signal conditions by exploiting a measurements setup based on LSVNA.
Titolo: | Accurate Nonlinear Electron Device Modelling for Cold FET Mixer Design |
Autore/i: | V. Di Giacomo; SANTARELLI, ALBERTO; A. Raffo; TRAVERSO, PIER ANDREA; D. Schreurs; J. Lonac; D. Resca; G. Vannini; FILICORI, FABIO; M. Pagani |
Autore/i Unibo: | |
Anno: | 2008 |
Titolo del libro: | Proc. of the 3rd European Microwave Integrated Circuits Conference (EuMIC08) |
Pagina iniziale: | 294 |
Pagina finale: | 297 |
Abstract: | A nonlinear empirical model is here adopted to model the cold-FET behaviour of a GaAs PHEMT, in the framework of a resistive mixer application. The model, purely mathematical and technology independent, is suitably identified in the device operative region of interest and is validated in large-signal conditions by exploiting a measurements setup based on LSVNA. |
Data prodotto definitivo in UGOV: | 26-feb-2009 |
Appare nelle tipologie: | 4.01 Contributo in Atti di convegno |
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