A nonlinear empirical model is here adopted to model the cold-FET behaviour of a GaAs PHEMT, in the framework of a resistive mixer application. The model, purely mathematical and technology independent, is suitably identified in the device operative region of interest and is validated in large-signal conditions by exploiting a measurements setup based on LSVNA.
Accurate Nonlinear Electron Device Modelling for Cold FET Mixer Design / V. Di Giacomo; A. Santarelli; A. Raffo; P. Traverso; D. Schreurs; J. Lonac; D. Resca; G. Vannini; F. Filicori; M. Pagani. - STAMPA. - (2008), pp. 294-297. (Intervento presentato al convegno European Microwave Week (EuMW08) tenutosi a Amsterdam (The Netherlands) nel 27-31 Oct 2008).
Accurate Nonlinear Electron Device Modelling for Cold FET Mixer Design
SANTARELLI, ALBERTO;TRAVERSO, PIER ANDREA;FILICORI, FABIO;
2008
Abstract
A nonlinear empirical model is here adopted to model the cold-FET behaviour of a GaAs PHEMT, in the framework of a resistive mixer application. The model, purely mathematical and technology independent, is suitably identified in the device operative region of interest and is validated in large-signal conditions by exploiting a measurements setup based on LSVNA.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
