A nonlinear empirical model is here adopted to model the cold-FET behaviour of a GaAs PHEMT, in the framework of a resistive mixer application. The model, purely mathematical and technology independent, is suitably identified in the device operative region of interest and is validated in large-signal conditions by exploiting a measurements setup based on LSVNA.
V. Di Giacomo, A. Santarelli, A. Raffo, P. Traverso, D. Schreurs, J. Lonac, et al. (2008). Accurate Nonlinear Electron Device Modelling for Cold FET Mixer Design. LONDON : Horizon House.
Accurate Nonlinear Electron Device Modelling for Cold FET Mixer Design
SANTARELLI, ALBERTO;TRAVERSO, PIER ANDREA;FILICORI, FABIO;
2008
Abstract
A nonlinear empirical model is here adopted to model the cold-FET behaviour of a GaAs PHEMT, in the framework of a resistive mixer application. The model, purely mathematical and technology independent, is suitably identified in the device operative region of interest and is validated in large-signal conditions by exploiting a measurements setup based on LSVNA.File in questo prodotto:
Eventuali allegati, non sono esposti
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
