A method for the evaluation of the output power performance reduction in GaN FET technologies due to nonlinear charge trapping is defined and differences with other III-V technologies are discussed. Several measurement-based performance indicators are defined and two different 0.25 μm AlGaN/GaN transistors are compared in the paper in terms of power reduction due to nonlinear charge trapping lagging effects.
Evaluation of GaN FET power performance reduction due to nonlinear charge trapping effects
SANTARELLI, ALBERTO;CIGNANI, RAFAEL;NIESSEN, DANIEL;GIBIINO, GIAN PIERO;TRAVERSO, PIER ANDREA;FILICORI, FABIO
2014
Abstract
A method for the evaluation of the output power performance reduction in GaN FET technologies due to nonlinear charge trapping is defined and differences with other III-V technologies are discussed. Several measurement-based performance indicators are defined and two different 0.25 μm AlGaN/GaN transistors are compared in the paper in terms of power reduction due to nonlinear charge trapping lagging effects.File in questo prodotto:
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