A method for the evaluation of the output power performance reduction in GaN FET technologies due to nonlinear charge trapping is defined and differences with other III-V technologies are discussed. Several measurement-based performance indicators are defined and two different 0.25 μm AlGaN/GaN transistors are compared in the paper in terms of power reduction due to nonlinear charge trapping lagging effects.
Titolo: | Evaluation of GaN FET power performance reduction due to nonlinear charge trapping effects |
Autore/i: | SANTARELLI, ALBERTO; CIGNANI, RAFAEL; NIESSEN, DANIEL; GIBIINO, GIAN PIERO; TRAVERSO, PIER ANDREA; Di Giacomo, Valeria; Chang, Christophe; Floriot, Didier; Schreurs, Dominique; FILICORI, FABIO |
Autore/i Unibo: | |
Anno: | 2014 |
Titolo del libro: | European Microwave Week 2014: "Connecting the Future", EuMW 2014 - Conference Proceedings; EuMIC 2014: 9th European Microwave Integrated Circuits Conference |
Pagina iniziale: | 198 |
Pagina finale: | 201 |
Digital Object Identifier (DOI): | http://dx.doi.org/10.1109/EuMIC.2014.6997826 |
Abstract: | A method for the evaluation of the output power performance reduction in GaN FET technologies due to nonlinear charge trapping is defined and differences with other III-V technologies are discussed. Several measurement-based performance indicators are defined and two different 0.25 μm AlGaN/GaN transistors are compared in the paper in terms of power reduction due to nonlinear charge trapping lagging effects. |
Data stato definitivo: | 22-gen-2016 |
Appare nelle tipologie: | 4.01 Contributo in Atti di convegno |
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