Standard dynamic characterization methods based on periodic narrow-pulse low duty-cycle excitation waveforms provide suboptimal I/V curves when used along with GaN field effect transistors (FETs), due to complex nonlinear charge trapping effects. Thus, a double-pulse technique for the dynamic characterization of GaN FETs is here presented. The double-pulsed I/V characteristics are shown to be not only isothermal but also corresponding to a fixed charge trapping state.
Alberto Santarelli, Rafael Cignani, Gian Piero Gibiino, Daniel Niessen, Pier Andrea Traverso, Corrado Florian, et al. (2014). A Double-Pulse Technique for the Dynamic I/V Characterization of GaN FETs. IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 24, 132-134 [10.1109/LMWC.2013.2290216].
A Double-Pulse Technique for the Dynamic I/V Characterization of GaN FETs
SANTARELLI, ALBERTO;CIGNANI, RAFAEL;GIBIINO, GIAN PIERO;NIESSEN, DANIEL;TRAVERSO, PIER ANDREA;FLORIAN, CORRADO;FILICORI, FABIO
2014
Abstract
Standard dynamic characterization methods based on periodic narrow-pulse low duty-cycle excitation waveforms provide suboptimal I/V curves when used along with GaN field effect transistors (FETs), due to complex nonlinear charge trapping effects. Thus, a double-pulse technique for the dynamic characterization of GaN FETs is here presented. The double-pulsed I/V characteristics are shown to be not only isothermal but also corresponding to a fixed charge trapping state.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
