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EnglishStandard dynamic characterization methods based on periodic narrow-pulse low duty-cycle excitation waveforms provide suboptimal I/V curves when used along with GaN field effect transistors (FETs), due to complex nonlinear charge trapping effects. Thus, a double-pulse technique for the dynamic characterization of GaN FETs is here presented. The double-pulsed I/V characteristics are shown to be not only isothermal but also corresponding to a fixed charge trapping state.
| Titolo: | A Double-Pulse Technique for the Dynamic I/V Characterization of GaN FETs |
| Autore/i: | SANTARELLI, ALBERTO; CIGNANI, RAFAEL; GIBIINO, GIAN PIERO; NIESSEN, DANIEL; TRAVERSO, PIER ANDREA; FLORIAN, CORRADO; Dominique M. M. P. Schreurs; FILICORI, FABIO |
| Autore/i Unibo: | |
| Anno: | 2014 |
| Rivista: | |
| Digital Object Identifier (DOI): | http://dx.doi.org/10.1109/LMWC.2013.2290216 |
| Abstract: | Standard dynamic characterization methods based on periodic narrow-pulse low duty-cycle excitation waveforms provide suboptimal I/V curves when used along with GaN field effect transistors (FETs), due to complex nonlinear charge trapping effects. Thus, a double-pulse technique for the dynamic characterization of GaN FETs is here presented. The double-pulsed I/V characteristics are shown to be not only isothermal but also corresponding to a fixed charge trapping state. |
| Data prodotto definitivo in UGOV: | 2014-03-27 11:40:22 |
| Appare nelle tipologie: | 1.01 Articolo in rivista |
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http://hdl.handle.net/11585/260680
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