The paper introduces a new pulsed measurement system for the characterization of thermal and charge trapping effects in compound semiconductor III-V FETs. Minimization of reflections are obtained by pulse generation in a 50 Ω environment and separation between DC and AC path guarantees no variations of the average voltage values of pulses. Both GaAs- and GaN-based FETs are characterized and some differences between the two technologies are outlined as far as the charge trapping behaviour is concerned.
A. Santarelli, R. Cignani, D. Niessen, S. D'Angelo, P. Traverso, F. Filicori (2011). Characterization of GaN and GaAs FETs through a new pulsed measurement system. 16 Sussex Street, London, SW1V 4RW, UK : HORIZON HOUSE PUBLICATIONS INC.
Characterization of GaN and GaAs FETs through a new pulsed measurement system
SANTARELLI, ALBERTO;CIGNANI, RAFAEL;NIESSEN, DANIEL;TRAVERSO, PIER ANDREA;FILICORI, FABIO
2011
Abstract
The paper introduces a new pulsed measurement system for the characterization of thermal and charge trapping effects in compound semiconductor III-V FETs. Minimization of reflections are obtained by pulse generation in a 50 Ω environment and separation between DC and AC path guarantees no variations of the average voltage values of pulses. Both GaAs- and GaN-based FETs are characterized and some differences between the two technologies are outlined as far as the charge trapping behaviour is concerned.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
