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EnglishWhen dealing with microwave electron device modeling, robust device characterization typically involves measurement systems which enable the device to be characterized under actual operations, that means under high-frequency nonlinear regime. Nevertheless, high-frequency large-signal measurement systems are very expensive, have limited frequency, and, moreover, when the identification of a nonlinear model is the measurement purpose, reactive parasitic elements tend to hide the most important nonlinearity source: the “intrinsic drain current source”. In order to overcome these problems, an alternative nonlinear measurement setup based on large-signal sinusoidal excitation at low-frequency (e.g., a few megahertz) is here proposed to characterize the intrinsic electron device behavior. Different experimental examples, carried out on both field-effect and bipolar transistors, are here provided in order to clearly demonstrate the capabilities of the proposed electron-device characterization technique.
| Titolo: | A Dual-Source Nonlinear Measurement System Oriented to the Empirical Characterization of Low-Frequency Dispersion in Microwave Electron Devices |
| Autore/i: | A. Raffo; V. Vadalà; TRAVERSO, PIER ANDREA; SANTARELLI, ALBERTO; G. Vannini; FILICORI, FABIO |
| Autore/i Unibo: | |
| Anno: | 2011 |
| Rivista: | |
| Digital Object Identifier (DOI): | http://dx.doi.org/10.1016/j.csi.2010.06.008 |
| Abstract: | When dealing with microwave electron device modeling, robust device characterization typically involves measurement systems which enable the device to be characterized under actual operations, that means under high-frequency nonlinear regime. Nevertheless, high-frequency large-signal measurement systems are very expensive, have limited frequency, and, moreover, when the identification of a nonlinear model is the measurement purpose, reactive parasitic elements tend to hide the most important nonlinearity source: the “intrinsic drain current source”. In order to overcome these problems, an alternative nonlinear measurement setup based on large-signal sinusoidal excitation at low-frequency (e.g., a few megahertz) is here proposed to characterize the intrinsic electron device behavior. Different experimental examples, carried out on both field-effect and bipolar transistors, are here provided in order to clearly demonstrate the capabilities of the proposed electron-device characterization technique. |
| Data prodotto definitivo in UGOV: | 2013-06-26 18:12:43 |
| Appare nelle tipologie: | 1.01 Articolo in rivista |
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http://hdl.handle.net/11585/99030
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