A wideband hybrid AlGaN/GaN Resistive Mixer has been designed and simulated. The cold-FET mixer is based on a 2*100*0.25 μm² AlGaN/GaN HEMT in a single-ended circuit topology. An application-specific empirical transistor model has been extracted and validated in small- and large-signal conditions, in order to carry out the mixer design and simulations. This mixer presents an IF bandwidth of 6 GHz with a conversion loss < 16 dB for each RF and LO frequency choice from 6 up to 18 GHz.
V. Di Giacomo, N. Thouvenin, C. Gaquière, A. Santarelli, F. Filicori (2009). Modelling and Design of a Wideband 6-18 GHz GaN Resistive Mixer. LOUVAIN-LA-NEUVE : EuMA [10.1109/EUMC.2009.5295933].
Modelling and Design of a Wideband 6-18 GHz GaN Resistive Mixer
DI GIACOMO, VALERIA;SANTARELLI, ALBERTO;FILICORI, FABIO
2009
Abstract
A wideband hybrid AlGaN/GaN Resistive Mixer has been designed and simulated. The cold-FET mixer is based on a 2*100*0.25 μm² AlGaN/GaN HEMT in a single-ended circuit topology. An application-specific empirical transistor model has been extracted and validated in small- and large-signal conditions, in order to carry out the mixer design and simulations. This mixer presents an IF bandwidth of 6 GHz with a conversion loss < 16 dB for each RF and LO frequency choice from 6 up to 18 GHz.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
