A wideband hybrid AlGaN/GaN Resistive Mixer has been designed and simulated. The cold-FET mixer is based on a 2*100*0.25 μm² AlGaN/GaN HEMT in a single-ended circuit topology. An application-specific empirical transistor model has been extracted and validated in small- and large-signal conditions, in order to carry out the mixer design and simulations. This mixer presents an IF bandwidth of 6 GHz with a conversion loss < 16 dB for each RF and LO frequency choice from 6 up to 18 GHz.
Modelling and Design of a Wideband 6-18 GHz GaN Resistive Mixer
DI GIACOMO, VALERIA;SANTARELLI, ALBERTO;FILICORI, FABIO
2009
Abstract
A wideband hybrid AlGaN/GaN Resistive Mixer has been designed and simulated. The cold-FET mixer is based on a 2*100*0.25 μm² AlGaN/GaN HEMT in a single-ended circuit topology. An application-specific empirical transistor model has been extracted and validated in small- and large-signal conditions, in order to carry out the mixer design and simulations. This mixer presents an IF bandwidth of 6 GHz with a conversion loss < 16 dB for each RF and LO frequency choice from 6 up to 18 GHz.File in questo prodotto:
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