A silicon self-aligned-emitter bipolar process from STMicroelectronics for very high efficiency handsets power applications has been used to build two Dielectric Resonator Oscillators. Despite this technology addresses the mobile telephony frequency range at 1.8GHz, the oscillators generate a stable reference at 6GHz and 7.5GHz respectively. A low frequency noise model has been identified and implemented in a Gummel Poon nonlinear model. A design technique to optimize stability and phase noise performances has been used. The DROs exhibit phase noise of -116dBc/Hz and -107dBc/Hz at 10KHz offset from the carrier respectively.
Florian, C., Pirazzini, M., Vannini, G., Santarelli, A., Borgarino, M., Angelone, C., et al. (2004). C Band DROs Using Microwave Bipolar Devices: Nonlinear Design Technique and Noise Model for Phase Noise Prediction. NORWOOD (MA) : Horizon House.
C Band DROs Using Microwave Bipolar Devices: Nonlinear Design Technique and Noise Model for Phase Noise Prediction
FLORIAN, CORRADO;SANTARELLI, ALBERTO;FILICORI, FABIO
2004
Abstract
A silicon self-aligned-emitter bipolar process from STMicroelectronics for very high efficiency handsets power applications has been used to build two Dielectric Resonator Oscillators. Despite this technology addresses the mobile telephony frequency range at 1.8GHz, the oscillators generate a stable reference at 6GHz and 7.5GHz respectively. A low frequency noise model has been identified and implemented in a Gummel Poon nonlinear model. A design technique to optimize stability and phase noise performances has been used. The DROs exhibit phase noise of -116dBc/Hz and -107dBc/Hz at 10KHz offset from the carrier respectively.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
