A silicon self-aligned-emitter bipolar process from STMicroelectronics for very high efficiency handsets power applications has been used to build two Dielectric Resonator Oscillators. Despite this technology addresses the mobile telephony frequency range at 1.8GHz, the oscillators generate a stable reference at 6GHz and 7.5GHz respectively. A low frequency noise model has been identified and implemented in a Gummel Poon nonlinear model. A design technique to optimize stability and phase noise performances has been used. The DROs exhibit phase noise of -116dBc/Hz and -107dBc/Hz at 10KHz offset from the carrier respectively.

C Band DROs Using Microwave Bipolar Devices: Nonlinear Design Technique and Noise Model for Phase Noise Prediction

FLORIAN, CORRADO;SANTARELLI, ALBERTO;FILICORI, FABIO
2004

Abstract

A silicon self-aligned-emitter bipolar process from STMicroelectronics for very high efficiency handsets power applications has been used to build two Dielectric Resonator Oscillators. Despite this technology addresses the mobile telephony frequency range at 1.8GHz, the oscillators generate a stable reference at 6GHz and 7.5GHz respectively. A low frequency noise model has been identified and implemented in a Gummel Poon nonlinear model. A design technique to optimize stability and phase noise performances has been used. The DROs exhibit phase noise of -116dBc/Hz and -107dBc/Hz at 10KHz offset from the carrier respectively.
European Microwave Week 2004 - Conference Proceedings
41
44
FLORIAN C.; PIRAZZINI M.; VANNINI G.; SANTARELLI A.; BORGARINO M.; ANGELONE C.; PAPARO M.; FILICORI F.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/3941
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