Large-signal dynamic modelling of III-V FETs cannot be simply based on DC i/v characteristics, when accurate performance prediction is needed. In fact, dispersive phenomena due to self-heating and/or traps (surface state densities and deep level traps) must be taken into account since they cause important deviations in the low-frequency dynamic drain current. Thus, static drain current characteristics should be replaced with a suitable model which also accounts for low-frequency dispersive effects. The research community has proposed different modelling approaches and quite often a characterisation by means of pulsed i/v measurement systems has been suggested as the more appropriate for the identification of lowfrequency drain current models. In the paper, a new largesignal measurement setup is presented which is based on simple low-frequency sinusoidal excitations and it is easily reproducible with conventional general-purpose lab instrumentation. Moreover, the proposed setup is adopted in the paper to extract a backgating-like model for dispersive phenomena.

On-Wafer I/V Measurement Setup for the Characterization of Low-Frequency Dispersion in Electron Devices

SANTARELLI, ALBERTO;TRAVERSO, PIER ANDREA;FILICORI, FABIO
2004

Abstract

Large-signal dynamic modelling of III-V FETs cannot be simply based on DC i/v characteristics, when accurate performance prediction is needed. In fact, dispersive phenomena due to self-heating and/or traps (surface state densities and deep level traps) must be taken into account since they cause important deviations in the low-frequency dynamic drain current. Thus, static drain current characteristics should be replaced with a suitable model which also accounts for low-frequency dispersive effects. The research community has proposed different modelling approaches and quite often a characterisation by means of pulsed i/v measurement systems has been suggested as the more appropriate for the identification of lowfrequency drain current models. In the paper, a new largesignal measurement setup is presented which is based on simple low-frequency sinusoidal excitations and it is easily reproducible with conventional general-purpose lab instrumentation. Moreover, the proposed setup is adopted in the paper to extract a backgating-like model for dispersive phenomena.
Proceedings of IEEE 2004 MTT-S ARFTG 63rd Conference
21
28
A. Raffo; A. Santarelli; P. A. Traverso; G. Vannini; F. Filicori
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/15436
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