A pulsed characterization of gallium nitride (GaN) high-electron mobility transistors (HEMTs) under a controlled trap and thermal state is performed to evaluate the trapping-induced degradation in the actual operating conditions, corresponding to different classes of power amplifiers (PAs). Two state-of-the-art GaN-on-SiC technologies are evaluated: 0.15-μm Qorvo and 0.25-μm Wolfspeed HEMTs, with examples relative to class-AB, class-E, and supply modulated operation. It is shown that, in order to get an accurate device characterization, the measurements have to be performed by preconditioning the trap state consistently with the intended application.
Gibiino, G. (2018). Isotrap Pulsed IV Characterization of GaN HEMTs for PA Design. IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 28(8), 672-674 [10.1109/LMWC.2018.2843278].
Isotrap Pulsed IV Characterization of GaN HEMTs for PA Design
Gibiino G. P.;Florian C.;Santarelli A.;Cappello T.;
2018
Abstract
A pulsed characterization of gallium nitride (GaN) high-electron mobility transistors (HEMTs) under a controlled trap and thermal state is performed to evaluate the trapping-induced degradation in the actual operating conditions, corresponding to different classes of power amplifiers (PAs). Two state-of-the-art GaN-on-SiC technologies are evaluated: 0.15-μm Qorvo and 0.25-μm Wolfspeed HEMTs, with examples relative to class-AB, class-E, and supply modulated operation. It is shown that, in order to get an accurate device characterization, the measurements have to be performed by preconditioning the trap state consistently with the intended application.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
