A new nonquasi-static nonlinear model of electron devices is proposed by adopting a perturbed charge-controlled approach. The model is based on the definition of a virtual quasi-static device, associated with the actual one, which is controlled by means of equivalent voltage sources. The advantage of this approach is that conventional purely quasi-static models can be still adopted even at very high frequencies, if suitable equivalent voltages are applied. Identification from small-signal measurements and implementation into commercially available computer-aided design tools of the new nonquasi-static model are described in this paper. Finally, by considering a GaAs p-high electron mobility transistor, accurate prediction capabilities at microwaves and millimeter frequencies are experimental verified and compared with a more conventional equivalent-circuit-based model.
A. Santarelli, V. Di Giacomo, A. Raffo, P. A. Traverso, G. Vannini, F. Filicori (2006). A Nonquasi-Static Empirical Model of Electron Devices. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 54, N.12, 2006, 4021-4031 [10.1109/TMTT.2006.885879].
A Nonquasi-Static Empirical Model of Electron Devices
SANTARELLI, ALBERTO;TRAVERSO, PIER ANDREA;FILICORI, FABIO
2006
Abstract
A new nonquasi-static nonlinear model of electron devices is proposed by adopting a perturbed charge-controlled approach. The model is based on the definition of a virtual quasi-static device, associated with the actual one, which is controlled by means of equivalent voltage sources. The advantage of this approach is that conventional purely quasi-static models can be still adopted even at very high frequencies, if suitable equivalent voltages are applied. Identification from small-signal measurements and implementation into commercially available computer-aided design tools of the new nonquasi-static model are described in this paper. Finally, by considering a GaAs p-high electron mobility transistor, accurate prediction capabilities at microwaves and millimeter frequencies are experimental verified and compared with a more conventional equivalent-circuit-based model.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
