This paper presents a new and simple method for characterizing the thermal behavior of Heterojunction Bipolar Transistors, based on DC, AC and low frequency small signal measures of H (hybrid) parameters. Static characterization of the thermal behavior is achieved through the calculation of a thermal resistance, while a thermal impedance is used to describe thermal dynamic behavior. Validation results for the method obtained from both simulations and experimental data are included in the paper for a 10x2x40 µm InGaP/GaAs power HBT.
Lonac J. A. , Santarelli A. , Melczarsky I. , Filicori F. (2005). A Simple Technique for Measuring the Thermal Impedance and the Thermal Resistance of HBTs. NORWOOD (MA) : HORIZON HOUSE.
A Simple Technique for Measuring the Thermal Impedance and the Thermal Resistance of HBTs
LONAC, JULIO ANDRES;SANTARELLI, ALBERTO;MELCZARSKY, ILAN;FILICORI, FABIO
2005
Abstract
This paper presents a new and simple method for characterizing the thermal behavior of Heterojunction Bipolar Transistors, based on DC, AC and low frequency small signal measures of H (hybrid) parameters. Static characterization of the thermal behavior is achieved through the calculation of a thermal resistance, while a thermal impedance is used to describe thermal dynamic behavior. Validation results for the method obtained from both simulations and experimental data are included in the paper for a 10x2x40 µm InGaP/GaAs power HBT.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
