A double-pulse technique for the I/V characterization of GaN-based transistors is adopted for the nonlinear modeling of a 0.25 μm AlGaN/GaN on SiC FET. Experimental validation is provided by means of large-signal PA performance prediction both at low-frequency, in order to outline the role played by the resistive drain current source, and at microwaves. Improved prediction accuracy is demonstrated with respect to the use of standard single-pulse I/V characteristics.
Large-signal GaN transistor characterization and modeling including charge trapping nonlinear dynamics / A. Santarelli;D. Niessen;R. Cignani;G. P. Gibiino;P. A. Traverso;C. Florian;D. Schreurs;F. Filicori. - ELETTRONICO. - (2014), pp. 1-3. (Intervento presentato al convegno 2014 IEEE MTT-S International Microwave Symposium (IMS2014) tenutosi a Tampa (FL) USA nel 1-6 June, 2014) [10.1109/MWSYM.2014.6848431].
Large-signal GaN transistor characterization and modeling including charge trapping nonlinear dynamics
SANTARELLI, ALBERTO;NIESSEN, DANIEL;CIGNANI, RAFAEL;GIBIINO, GIAN PIERO;TRAVERSO, PIER ANDREA;FLORIAN, CORRADO;FILICORI, FABIO
2014
Abstract
A double-pulse technique for the I/V characterization of GaN-based transistors is adopted for the nonlinear modeling of a 0.25 μm AlGaN/GaN on SiC FET. Experimental validation is provided by means of large-signal PA performance prediction both at low-frequency, in order to outline the role played by the resistive drain current source, and at microwaves. Improved prediction accuracy is demonstrated with respect to the use of standard single-pulse I/V characteristics.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
