Radio-frequency power transistors affected by dispersive phenomena such as thermal and charge trapping effects can be effectively characterized and modeled by means of pulsed current-voltage measurements. This work presents the design of a passive bias network made out of off-the-shelf components and tailored for the application of fast pulses through its capacitive path, yet extending the bandwidth down to a few kHz. This custom component enables small duty-cycle (e.g., 0.1 %) fast-pulsed excitations of several tens of V of ac voltage in the presence of bias voltages up to 50 V and bias currents up to 2 A.
Gibiino, G., Cignani, R., Santarelli, A., Traverso, P. (2018). A bias network for small duty-cycle fast-pulsed measurement of RF power transistors. Institute of Physics Publishing [10.1088/1742-6596/1065/5/052007].
A bias network for small duty-cycle fast-pulsed measurement of RF power transistors
Gibiino, G. P.;Cignani, R.;Santarelli, A.;Traverso, P. A.
2018
Abstract
Radio-frequency power transistors affected by dispersive phenomena such as thermal and charge trapping effects can be effectively characterized and modeled by means of pulsed current-voltage measurements. This work presents the design of a passive bias network made out of off-the-shelf components and tailored for the application of fast pulses through its capacitive path, yet extending the bandwidth down to a few kHz. This custom component enables small duty-cycle (e.g., 0.1 %) fast-pulsed excitations of several tens of V of ac voltage in the presence of bias voltages up to 50 V and bias currents up to 2 A.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
