In this paper, the breakdown walkout in microwave electron devices is investigated by means of a recently proposed measurement set-up. This innovative setup allows to apply a stress procedure not only in classical static conditions, but also under dynamic regime by applying a large-amplitude excitation signal at moderately high frequency at either the input or the output port of the device. As a matter of fact, for the very first time, experimental data can be collected for fully investigating the walkout behaviour under both static and dynamic operations.
Breakdown Walkout Investigation in Electron Devices Under Nonlinear Dynamic Regime / V. Di Giacomo; S. Di Falco; A. Raffo; P. A. Traverso; A. Santarelli; G. Vannini; F.Filicori. - STAMPA. - (2008), pp. 9-12. (Intervento presentato al convegno Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMiC 2008) tenutosi a Malaga (Spain) nel 24th - 25th Nov. 2008).
Breakdown Walkout Investigation in Electron Devices Under Nonlinear Dynamic Regime
TRAVERSO, PIER ANDREA;SANTARELLI, ALBERTO;FILICORI, FABIO
2008
Abstract
In this paper, the breakdown walkout in microwave electron devices is investigated by means of a recently proposed measurement set-up. This innovative setup allows to apply a stress procedure not only in classical static conditions, but also under dynamic regime by applying a large-amplitude excitation signal at moderately high frequency at either the input or the output port of the device. As a matter of fact, for the very first time, experimental data can be collected for fully investigating the walkout behaviour under both static and dynamic operations.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
