A new approach for the electro-thermal modeling of GaN FETs is presented. The model is identified on-wafer through static I/V curves measured at different base plate temperatures and small-signal parameters. Improvements in the prediction of the dc drain current component under large-signal operation can be obtained by taking into account nonlinear dynamics of charge trapping phenomena. The use of measured pulsed-I/V characteristics is avoided in the model extraction phase. Identification procedures and a wide experimental validation for a 0.25 μm AlGaN/GaN HEMT on SiC with 600 μm periphery are provided in the paper.
A. Santarelli, V. Di Giacomo (2010). Empirical Modeling of GaN FETs for Nonlinear Microwave Circuit Applications. Piscataway, NJ : Institute of Electrical and Electronic Engineers [10.1109/MWSYM.2010.5517501].
Empirical Modeling of GaN FETs for Nonlinear Microwave Circuit Applications
SANTARELLI, ALBERTO;
2010
Abstract
A new approach for the electro-thermal modeling of GaN FETs is presented. The model is identified on-wafer through static I/V curves measured at different base plate temperatures and small-signal parameters. Improvements in the prediction of the dc drain current component under large-signal operation can be obtained by taking into account nonlinear dynamics of charge trapping phenomena. The use of measured pulsed-I/V characteristics is avoided in the model extraction phase. Identification procedures and a wide experimental validation for a 0.25 μm AlGaN/GaN HEMT on SiC with 600 μm periphery are provided in the paper.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
