FILICORI, FABIO
 Distribuzione geografica
Continente #
NA - Nord America 12.331
AS - Asia 6.470
EU - Europa 4.619
SA - Sud America 393
AF - Africa 364
Continente sconosciuto - Info sul continente non disponibili 191
OC - Oceania 9
Totale 24.377
Nazione #
US - Stati Uniti d'America 12.225
SG - Singapore 1.863
VN - Vietnam 1.863
CN - Cina 1.560
GB - Regno Unito 1.194
DE - Germania 661
IT - Italia 641
SE - Svezia 443
UA - Ucraina 438
HK - Hong Kong 350
FR - Francia 313
IN - India 303
RU - Federazione Russa 265
BR - Brasile 244
IE - Irlanda 179
CI - Costa d'Avorio 157
JP - Giappone 138
EE - Estonia 97
ZA - Sudafrica 93
JO - Giordania 70
KR - Corea 69
FI - Finlandia 65
CH - Svizzera 64
NL - Olanda 62
CA - Canada 61
AR - Argentina 53
BG - Bulgaria 47
PH - Filippine 42
TG - Togo 42
SC - Seychelles 41
TH - Thailandia 31
BE - Belgio 28
BD - Bangladesh 26
EC - Ecuador 25
AT - Austria 24
CO - Colombia 24
PL - Polonia 23
IQ - Iraq 19
ID - Indonesia 18
ES - Italia 17
TR - Turchia 16
TW - Taiwan 16
GR - Grecia 15
MY - Malesia 13
PK - Pakistan 13
UZ - Uzbekistan 13
VE - Venezuela 13
CL - Cile 12
BO - Bolivia 11
MX - Messico 11
CZ - Repubblica Ceca 9
JM - Giamaica 9
SA - Arabia Saudita 9
LB - Libano 8
PY - Paraguay 8
AU - Australia 6
EG - Egitto 6
HN - Honduras 6
NG - Nigeria 6
SI - Slovenia 6
IR - Iran 5
MA - Marocco 5
KE - Kenya 4
MD - Moldavia 4
NP - Nepal 4
RO - Romania 4
BA - Bosnia-Erzegovina 3
BB - Barbados 3
CR - Costa Rica 3
DO - Repubblica Dominicana 3
ET - Etiopia 3
EU - Europa 3
GE - Georgia 3
KZ - Kazakistan 3
LT - Lituania 3
NZ - Nuova Zelanda 3
PE - Perù 3
DK - Danimarca 2
GT - Guatemala 2
HR - Croazia 2
MK - Macedonia 2
MN - Mongolia 2
NO - Norvegia 2
OM - Oman 2
PR - Porto Rico 2
PT - Portogallo 2
SV - El Salvador 2
TN - Tunisia 2
A1 - Anonimo 1
A2 - ???statistics.table.value.countryCode.A2??? 1
AE - Emirati Arabi Uniti 1
AF - Afghanistan, Repubblica islamica di 1
BH - Bahrain 1
BY - Bielorussia 1
BZ - Belize 1
CU - Cuba 1
DJ - Gibuti 1
DZ - Algeria 1
GN - Guinea 1
KG - Kirghizistan 1
Totale 24.177
Città #
Ann Arbor 3.918
Singapore 1.306
Southend 1.006
Fairfield 729
Ashburn 659
Chandler 572
Santa Clara 502
Dong Ket 485
Houston 483
San Jose 447
Wilmington 444
Woodbridge 368
Hong Kong 330
Jacksonville 303
Council Bluffs 296
Princeton 285
Seattle 285
Ho Chi Minh City 274
Hanoi 251
Cambridge 238
Beijing 193
Dublin 178
Hefei 178
Boardman 161
Abidjan 157
Nanjing 123
Lauterbourg 122
Tokyo 121
Westminster 114
Dallas 112
Bologna 108
Los Angeles 108
Padova 106
Berlin 93
Turin 82
Medford 81
Amman 70
New York 68
Buffalo 65
Chicago 64
Milan 63
Jinan 62
San Diego 60
Seoul 58
Mülheim 56
Saint Petersburg 52
Bern 50
Mantova 50
Munich 47
Hebei 46
Shenyang 46
Sofia 46
Lomé 42
Helsinki 39
Redondo Beach 38
Tianjin 38
Changsha 37
Haiphong 36
Rome 35
Mahé 34
Da Nang 33
Guangzhou 33
Shanghai 32
Des Moines 31
São Paulo 31
Nanchang 28
Zhengzhou 28
Brussels 27
Frankfurt am Main 27
Atlanta 26
Braunschweig 24
Taiyuan 23
Hangzhou 22
Orem 22
Turku 21
Jiaxing 19
Fuzhou 18
Montreal 18
Phoenix 18
Toronto 18
Brooklyn 17
Chennai 17
San Francisco 17
Tappahannock 17
Vienna 17
Warsaw 17
Bengaluru 16
Hải Dương 16
Verona 16
Chengdu 15
Olalla 15
Falls Church 14
Redmond 14
Taizhou 14
Baghdad 13
Haikou 13
London 13
Shenzhen 13
Yubileyny 13
Moscow 12
Totale 17.218
Nome #
Nonlinear RF device modelling in the presence of low-frequency dispersive phenomena 392
C Band DROs Using Microwave Bipolar Devices: Nonlinear Design Technique and Noise Model for Phase Noise Prediction 311
A Nonlinear Dynamic Model for Performance Analysis of Large-Signal Amplifiers in Communication Systems 306
Numerically efficient design of highly linear microwave power amplifiers 294
10 Watt High Efficiency GaAs MMIC Power Amplifier for Space Applications 285
Charge-controlled GaN FET modeling by displacement current integration from frequency-domain NVNA measurements 284
A GaN HEMT Global Large-Signal Model Including Charge Trapping for Multibias Operation 272
A Double-Pulse Technique for the Dynamic I/V Characterization of GaN FETs 261
A Non-Linear Noise Model of Bipolar Transistors for the Phase-Noise Performance Analysis of Microwave Oscillators 252
Global modeling of GaN HEMT resistive current including charge trapping and self-heating for multi-bias multi-class PA performance prediction 251
On the use of the Discrete-Time Convolution Model for the compensation of non-idealities within digital acquisition channels 237
A 40 watt C-band MMIC high power amplifier for space radar application exploiting a 0.25 um AlGaN/GaN on SiC process 237
Accurate EM-based Modeling of Cascode FETs 235
A Simple Technique for Measuring the Thermal Impedance and the Thermal Resistance of HBTs 233
An Empirical Bipolar Device Nonlinear Noise Modeling Approach for Large-Signal Microwave Circuit Analysis 233
Identification Procedures for the Charge-Controlled Non-Linear Noise Model of Microwave Electron Devices 231
A Nonquasi-Static Empirical Model of Electron Devices 230
Multitone Multiharmonic Scattering Parameters for the Characterization of Nonlinear Networks 229
Charge-conservative GaN HEMT nonlinear modeling from non-isodynamic multi-bias S-parameter measurements 228
Automated Microwave Device Characterization Set-Up Based on a Technology-Independent Generalized Bias System 226
Behavioral modeling of RF PAs under wideband load modulation 226
A new technique for thermal resistance measurement in power electron devices 224
Pre-pulsing characterization of GaN PAs with dynamic supply 223
Automatic Extraction of Measurement-Based Large-Signal FET Models by Nonlinear Function Sampling 220
A distributed approach for millimetre-wave electron device modelingA distributed approach for millimetre-wave electron device modeling 219
A Dual-Source Nonlinear Measurement System Oriented to the Empirical Characterization of Low-Frequency Dispersion in Microwave Electron Devices 218
Hardware Implementation of a Broad-Band Vector Spectrum Analyzer Based on Randomized Sampling 217
Hybrid High Power Amplifiers for L-Band Space Application 215
Accurate Nonlinear Electron Device Modelling for Cold FET Mixer Design 215
A Prepulsing Technique for the Characterization of GaN Power Amplifiers With Dynamic Supply Under Controlled Thermal and Trapping States 215
Validation and Comparison of PA models 214
New pulsed measurement setup for GaN and GaAs FETs characterization 213
A C-band GaAs-pHEMT MMIC low phase noise VCO for space applications using a new cyclostationary nonlinear noise model 212
A generalized CAD interface for nonlinear dynamic electron device models 210
An empirical behavioral model for RF PAs including self-heating 210
A Two-Port Nonlinear Dynamic Behavioral Model of RF PAs Subject to Wideband Load Modulation 209
A 48Watt and 60dB Gain Hybrid Power Line-Up for an L-Band T/R Module of a Space SAR Antenna 208
Characterization and compensation of dynamic non-linearities in digital data acquisition channels by means of the Discrete-Time Convolution Model 208
Evaluation of GaN FET power performance reduction due to nonlinear charge trapping effects 208
Accurate modeling of electron device I/V characteristics through a simplified large-signal measurement setup 207
Active baseband drain-supply terminal load-pull of an X-band GaN MMIC PA 206
Large-signal GaN transistor characterization and modeling including charge trapping nonlinear dynamics 205
On-Wafer I/V Measurement Setup for the Characterization of Low-Frequency Dispersion in Electron Devices 204
Envelope Tracking of an RF High Power Amplifier With an 8-Level Digitally Controlled GaN-on-Si Supply Modulator 202
GaN FET Nonlinear Modeling Based on Double Pulse I/V Characteristics 202
Measurement-Based Automatic Extraction of FET Parasitic Network by Linear Regression 202
Multi-bias nonlinear characterization of GaN FET trapping effects through a multiple pulse time domain network analyzer 201
Push-Push X Band GaInP/GaAs VCO With a Fully Monolithic Microstrip Resonator 200
Automated Microwave-Device Characterization Setup Based on a Technology-Independent Generalized Bias System 200
Scalable nonlinear FET model based on a distributed parasitic network description 200
Wattmeters 200
Characterization of the Nonlinear Thermal Resistance and Pulsed Thermal Dynamic Behavior of AlGaN–GaN HEMTs on SiC 200
A simple non-quasi-static non-linear model of electron devices 200
Iso-thermal and iso-dynamic direct charge function characterization of GaN FET with single large-signal measurement 200
Non-linear dynamic modelling of broad-band GHz-field Analogue-to-Digital acquisition channels 199
Compact empirical modeling of nonlinear dynamic thermal effects in electron devices 198
A Three-Port Nonlinear Dynamic Behavioral Model for Supply-Modulated RF PAs 198
An Active Bias Network for the Characterization of Low-Frequency Dispersion in High-Power Microwave Electron Devices 196
A Procedure for GaN HEMT Charge Functions Extraction from Multi-Bias S-Parameters 196
Stability Analysis and Design Criteria of Paralleled-Device Power Amplifiers Under Large-Signal Regime 195
Design of 40-W AlGaN/GaN MMIC High Power Amplifiers for C-Band SAR Applications 194
Scalable Equivalent Circuit FET Model for MMIC Design Identified Through FW-EM-Analyses 193
Accurate PHEMT Intermodulation Prediction in the Presence of Low-Frequency Dispersion Effects 193
Small-Signal Operation-Based Simplified Verification of Non-Linear Models for Millimeter-Wave Electron Devices 192
An electromagnetic method for measuring AC losses in HTS tapes without lock-in amplifier 192
An Innovative Two-Source Large-Signal Measurement System for the Characterization of Low-Frequency Dispersive Effects in FETs 191
Two-Input Nonlinear Dynamic Model Inversion for the Linearization of Envelope-Tracking RF PAs 190
Accurate Small- and Large-Signal Predictions Using a Simple, Nonquasi-Static, Empirical Model 190
Thermal characterization of nonlinear charge trapping effects in GaN-FETs 189
Extraction of an Extrinsic Parasitic Network for Accurate mm-Wave FET Scalable Modeling on the Basis of Full-Wave EM Simulation 187
A V band singly balanced diode mixer for space application 187
Hardware Implementation of a Broad-Band Vector Spectrum Analyzer Based on Randomized Sampling 186
Nonlinear charge trapping effects on pulsed I/V characteristics of GaN FETs 185
Nonlinear Modelling of InP Devices for W-band Applications 183
Noise Measurements for Microwave Electron Device Characterization and Modelling Under Non-Linear Operating Conditions 183
Characterization and modelling of broad-band GHz-field A/D acquisition channels by means of the Discrete-Time Convolution Model behavioural approach 183
Nonlinear charge trapping effects on pulsed I/V characteristics of GaN FETs 183
A fully nonlinear compact modeling approach for high-frequency noise in large-signal operated microwave electron devices 183
Characterization of GaN and GaAs FETs through a new pulsed measurement system 180
Nonlinear dispersive effects modelling for the accurate drain current prediction in GaN-based microwave power amplifiers 179
Breakdown Walkout Investigation in Electron Devices Under Nonlinear Dynamic Regime 179
Simplified Validation of Non-Linear Models for Micro- and Millimeter-Wave Electron Devices 178
Nonquasi-Static Large-Signal Model of GaN FETs through an Equivalent Voltage Approach 178
Active baseband drain-supply terminal load-pull of an X-band GaN MMIC PA 178
Modelling and Design of a Wideband 6-18 GHz GaN Resistive Mixer 177
Electrical measurement of the junction temperature and thermal resistance of HBTs 175
Low phase noise oscillator topologies: Theory and application to MMIC VCOs 175
The Charge-Controlled Nonlinear Noise Modeling Approach for the Design of MMIC GaAs-pHEMT VCOs for Space Applications 175
Improvement of PHEMT Intermodulation Prediction Through the Accurate Modelling of Low-Frequency Dispersion Effects 174
Electro-Thermal Characterization And Compact Modelling of GaN HEMTs for Microwave Applications 173
Electron Device Model Parameter Identification Through Large-Signal-Predictive Small-Signal-Based Error Functions 172
Mixer-like modeling with dynamic baseband characterization for supply-modulated PAs 170
Scalable Equivalent Circuit PHEMT modelling using an EM-based parasitic network description 168
Nonlinear Thermal Resistance Characterization for Compact Electrothermal GaN HEMT Modelling 167
Large-signal characterization of GaN-based transistors for accurate nonlinear modelling of dispersive effects 166
Design of Low Phase Noise Dielectric Resonator Oscillators with GaInP HBT devices exploiting a Non-Linear Noise Model 166
Optimal function approximation for empirical look-up-table device models (invited) 165
EM-based Parasitic Elements Identification For Scalable Electron Device Modeling 164
EM-based Modeling of Cascode FETs Suitable for MMIC Design 163
"Non-Linear FET Noise Modelling and Applications" 161
Totale 20.689
Categoria #
all - tutte 62.880
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 62.880


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20224.851 0 0 0 637 756 603 629 594 631 209 347 445
2022/20232.486 271 341 122 295 119 178 89 122 465 58 217 209
2023/2024563 48 167 41 26 35 98 31 44 8 29 10 26
2024/20252.592 88 497 250 124 633 103 267 33 13 51 70 463
2025/20265.220 213 396 579 386 700 407 582 156 1.081 381 140 199
2026/20271.208 124 199 499 386 0 0 0 0 0 0 0 0
Totale 24.377