FILICORI, FABIO
 Distribuzione geografica
Continente #
NA - Nord America 11.340
AS - Asia 6.383
EU - Europa 4.543
AF - Africa 361
SA - Sud America 335
OC - Oceania 9
Continente sconosciuto - Info sul continente non disponibili 6
Totale 22.977
Nazione #
US - Stati Uniti d'America 11.279
VN - Vietnam 1.860
SG - Singapore 1.840
CN - Cina 1.539
GB - Regno Unito 1.187
DE - Germania 660
IT - Italia 588
SE - Svezia 443
UA - Ucraina 435
HK - Hong Kong 342
FR - Francia 313
IN - India 300
RU - Federazione Russa 265
BR - Brasile 224
IE - Irlanda 178
CI - Costa d'Avorio 157
JP - Giappone 135
EE - Estonia 97
ZA - Sudafrica 93
JO - Giordania 70
KR - Corea 69
CH - Svizzera 64
FI - Finlandia 63
NL - Olanda 60
AR - Argentina 47
BG - Bulgaria 47
TG - Togo 42
PH - Filippine 40
CA - Canada 38
SC - Seychelles 38
TH - Thailandia 29
BE - Belgio 28
BD - Bangladesh 25
AT - Austria 24
PL - Polonia 22
IQ - Iraq 19
EC - Ecuador 17
ID - Indonesia 17
ES - Italia 16
TW - Taiwan 16
GR - Grecia 15
TR - Turchia 15
PK - Pakistan 13
UZ - Uzbekistan 12
CL - Cile 11
BO - Bolivia 10
CO - Colombia 10
MX - Messico 10
CZ - Repubblica Ceca 9
LB - Libano 7
MY - Malesia 7
PY - Paraguay 7
AU - Australia 6
EG - Egitto 6
NG - Nigeria 6
SA - Arabia Saudita 6
SI - Slovenia 6
VE - Venezuela 6
IR - Iran 5
MA - Marocco 5
KE - Kenya 4
MD - Moldavia 4
ET - Etiopia 3
EU - Europa 3
GE - Georgia 3
JM - Giamaica 3
LT - Lituania 3
NZ - Nuova Zelanda 3
PE - Perù 3
RO - Romania 3
BA - Bosnia-Erzegovina 2
DK - Danimarca 2
DO - Repubblica Dominicana 2
HR - Croazia 2
KZ - Kazakistan 2
NO - Norvegia 2
NP - Nepal 2
OM - Oman 2
TN - Tunisia 2
A1 - Anonimo 1
A2 - ???statistics.table.value.countryCode.A2??? 1
AF - Afghanistan, Repubblica islamica di 1
BB - Barbados 1
BH - Bahrain 1
BY - Bielorussia 1
BZ - Belize 1
CR - Costa Rica 1
CU - Cuba 1
DJ - Gibuti 1
DZ - Algeria 1
GN - Guinea 1
GT - Guatemala 1
LK - Sri Lanka 1
MT - Malta 1
PR - Porto Rico 1
PS - Palestinian Territory 1
PT - Portogallo 1
QA - Qatar 1
RE - Reunion 1
RS - Serbia 1
Totale 22.969
Città #
Ann Arbor 3.918
Singapore 1.286
Southend 1.006
Fairfield 729
Ashburn 603
Chandler 572
Santa Clara 489
Dong Ket 485
Houston 482
Wilmington 444
Woodbridge 368
San Jose 341
Hong Kong 323
Jacksonville 302
Seattle 282
Ho Chi Minh City 272
Princeton 268
Hanoi 250
Cambridge 238
Beijing 184
Hefei 178
Dublin 177
Abidjan 157
Boardman 154
Nanjing 123
Lauterbourg 122
Tokyo 119
Westminster 112
Dallas 110
Padova 106
Council Bluffs 105
Bologna 103
Berlin 93
Los Angeles 82
Medford 81
Turin 80
Amman 70
Buffalo 63
Jinan 62
Milan 62
Seoul 58
San Diego 57
Mülheim 56
Saint Petersburg 52
Bern 50
Mantova 50
Munich 47
Hebei 46
Shenyang 46
Sofia 46
Lomé 42
Redondo Beach 38
Tianjin 38
Changsha 37
Helsinki 37
Haiphong 36
Mahé 34
New York 34
Da Nang 33
Guangzhou 33
Des Moines 31
Shanghai 30
Nanchang 28
Zhengzhou 28
Brussels 27
Frankfurt am Main 27
Chicago 26
São Paulo 26
Braunschweig 24
Taiyuan 23
Hangzhou 22
Orem 22
Turku 21
Jiaxing 19
Fuzhou 18
San Francisco 17
Tappahannock 17
Vienna 17
Warsaw 17
Bengaluru 16
Chennai 16
Hải Dương 16
Rome 16
Verona 16
Atlanta 15
Chengdu 15
Olalla 15
Falls Church 14
Taizhou 14
Toronto 14
Baghdad 13
Haikou 13
Montreal 13
Phoenix 13
Redmond 13
Shenzhen 13
Yubileyny 13
London 12
Moscow 12
Wuhan 12
Totale 16.605
Nome #
Nonlinear RF device modelling in the presence of low-frequency dispersive phenomena 385
A Nonlinear Dynamic Model for Performance Analysis of Large-Signal Amplifiers in Communication Systems 303
C Band DROs Using Microwave Bipolar Devices: Nonlinear Design Technique and Noise Model for Phase Noise Prediction 303
Numerically efficient design of highly linear microwave power amplifiers 283
Charge-controlled GaN FET modeling by displacement current integration from frequency-domain NVNA measurements 273
10 Watt High Efficiency GaAs MMIC Power Amplifier for Space Applications 270
A GaN HEMT Global Large-Signal Model Including Charge Trapping for Multibias Operation 261
A Double-Pulse Technique for the Dynamic I/V Characterization of GaN FETs 250
Global modeling of GaN HEMT resistive current including charge trapping and self-heating for multi-bias multi-class PA performance prediction 239
A Non-Linear Noise Model of Bipolar Transistors for the Phase-Noise Performance Analysis of Microwave Oscillators 236
A 40 watt C-band MMIC high power amplifier for space radar application exploiting a 0.25 um AlGaN/GaN on SiC process 229
On the use of the Discrete-Time Convolution Model for the compensation of non-idealities within digital acquisition channels 228
An Empirical Bipolar Device Nonlinear Noise Modeling Approach for Large-Signal Microwave Circuit Analysis 227
Identification Procedures for the Charge-Controlled Non-Linear Noise Model of Microwave Electron Devices 225
Accurate EM-based Modeling of Cascode FETs 223
A Nonquasi-Static Empirical Model of Electron Devices 222
A Simple Technique for Measuring the Thermal Impedance and the Thermal Resistance of HBTs 220
Automated Microwave Device Characterization Set-Up Based on a Technology-Independent Generalized Bias System 216
A new technique for thermal resistance measurement in power electron devices 216
Pre-pulsing characterization of GaN PAs with dynamic supply 216
Charge-conservative GaN HEMT nonlinear modeling from non-isodynamic multi-bias S-parameter measurements 216
Behavioral modeling of RF PAs under wideband load modulation 215
Multitone Multiharmonic Scattering Parameters for the Characterization of Nonlinear Networks 213
Hybrid High Power Amplifiers for L-Band Space Application 212
Hardware Implementation of a Broad-Band Vector Spectrum Analyzer Based on Randomized Sampling 212
A distributed approach for millimetre-wave electron device modelingA distributed approach for millimetre-wave electron device modeling 210
A Dual-Source Nonlinear Measurement System Oriented to the Empirical Characterization of Low-Frequency Dispersion in Microwave Electron Devices 209
Automatic Extraction of Measurement-Based Large-Signal FET Models by Nonlinear Function Sampling 208
Accurate Nonlinear Electron Device Modelling for Cold FET Mixer Design 206
A Prepulsing Technique for the Characterization of GaN Power Amplifiers With Dynamic Supply Under Controlled Thermal and Trapping States 205
Validation and Comparison of PA models 204
An empirical behavioral model for RF PAs including self-heating 203
A C-band GaAs-pHEMT MMIC low phase noise VCO for space applications using a new cyclostationary nonlinear noise model 202
A generalized CAD interface for nonlinear dynamic electron device models 201
Evaluation of GaN FET power performance reduction due to nonlinear charge trapping effects 201
A 48Watt and 60dB Gain Hybrid Power Line-Up for an L-Band T/R Module of a Space SAR Antenna 200
New pulsed measurement setup for GaN and GaAs FETs characterization 200
Characterization and compensation of dynamic non-linearities in digital data acquisition channels by means of the Discrete-Time Convolution Model 199
On-Wafer I/V Measurement Setup for the Characterization of Low-Frequency Dispersion in Electron Devices 198
Active baseband drain-supply terminal load-pull of an X-band GaN MMIC PA 198
A Two-Port Nonlinear Dynamic Behavioral Model of RF PAs Subject to Wideband Load Modulation 197
Large-signal GaN transistor characterization and modeling including charge trapping nonlinear dynamics 195
Compact empirical modeling of nonlinear dynamic thermal effects in electron devices 194
Accurate modeling of electron device I/V characteristics through a simplified large-signal measurement setup 194
Envelope Tracking of an RF High Power Amplifier With an 8-Level Digitally Controlled GaN-on-Si Supply Modulator 194
GaN FET Nonlinear Modeling Based on Double Pulse I/V Characteristics 194
Multi-bias nonlinear characterization of GaN FET trapping effects through a multiple pulse time domain network analyzer 194
Automated Microwave-Device Characterization Setup Based on a Technology-Independent Generalized Bias System 192
Scalable nonlinear FET model based on a distributed parasitic network description 191
Non-linear dynamic modelling of broad-band GHz-field Analogue-to-Digital acquisition channels 190
Characterization of the Nonlinear Thermal Resistance and Pulsed Thermal Dynamic Behavior of AlGaN–GaN HEMTs on SiC 190
A simple non-quasi-static non-linear model of electron devices 190
Push-Push X Band GaInP/GaAs VCO With a Fully Monolithic Microstrip Resonator 189
An Active Bias Network for the Characterization of Low-Frequency Dispersion in High-Power Microwave Electron Devices 189
A Procedure for GaN HEMT Charge Functions Extraction from Multi-Bias S-Parameters 189
Measurement-Based Automatic Extraction of FET Parasitic Network by Linear Regression 189
Accurate PHEMT Intermodulation Prediction in the Presence of Low-Frequency Dispersion Effects 188
Wattmeters 187
A Three-Port Nonlinear Dynamic Behavioral Model for Supply-Modulated RF PAs 187
Iso-thermal and iso-dynamic direct charge function characterization of GaN FET with single large-signal measurement 187
Small-Signal Operation-Based Simplified Verification of Non-Linear Models for Millimeter-Wave Electron Devices 186
Stability Analysis and Design Criteria of Paralleled-Device Power Amplifiers Under Large-Signal Regime 186
Scalable Equivalent Circuit FET Model for MMIC Design Identified Through FW-EM-Analyses 184
Design of 40-W AlGaN/GaN MMIC High Power Amplifiers for C-Band SAR Applications 181
Thermal characterization of nonlinear charge trapping effects in GaN-FETs 180
Two-Input Nonlinear Dynamic Model Inversion for the Linearization of Envelope-Tracking RF PAs 180
Accurate Small- and Large-Signal Predictions Using a Simple, Nonquasi-Static, Empirical Model 179
A V band singly balanced diode mixer for space application 179
An electromagnetic method for measuring AC losses in HTS tapes without lock-in amplifier 179
Extraction of an Extrinsic Parasitic Network for Accurate mm-Wave FET Scalable Modeling on the Basis of Full-Wave EM Simulation 176
A fully nonlinear compact modeling approach for high-frequency noise in large-signal operated microwave electron devices 175
Simplified Validation of Non-Linear Models for Micro- and Millimeter-Wave Electron Devices 174
Characterization of GaN and GaAs FETs through a new pulsed measurement system 173
Nonlinear charge trapping effects on pulsed I/V characteristics of GaN FETs 173
Characterization and modelling of broad-band GHz-field A/D acquisition channels by means of the Discrete-Time Convolution Model behavioural approach 172
Nonlinear Modelling of InP Devices for W-band Applications 171
Noise Measurements for Microwave Electron Device Characterization and Modelling Under Non-Linear Operating Conditions 171
An Innovative Two-Source Large-Signal Measurement System for the Characterization of Low-Frequency Dispersive Effects in FETs 170
Nonlinear charge trapping effects on pulsed I/V characteristics of GaN FETs 170
Hardware Implementation of a Broad-Band Vector Spectrum Analyzer Based on Randomized Sampling 170
Active baseband drain-supply terminal load-pull of an X-band GaN MMIC PA 170
Modelling and Design of a Wideband 6-18 GHz GaN Resistive Mixer 169
Nonquasi-Static Large-Signal Model of GaN FETs through an Equivalent Voltage Approach 169
Breakdown Walkout Investigation in Electron Devices Under Nonlinear Dynamic Regime 169
Electrical measurement of the junction temperature and thermal resistance of HBTs 166
Nonlinear dispersive effects modelling for the accurate drain current prediction in GaN-based microwave power amplifiers 166
The Charge-Controlled Nonlinear Noise Modeling Approach for the Design of MMIC GaAs-pHEMT VCOs for Space Applications 166
Electro-Thermal Characterization And Compact Modelling of GaN HEMTs for Microwave Applications 165
Low phase noise oscillator topologies: Theory and application to MMIC VCOs 165
Electron Device Model Parameter Identification Through Large-Signal-Predictive Small-Signal-Based Error Functions 164
Scalable Equivalent Circuit PHEMT modelling using an EM-based parasitic network description 162
Mixer-like modeling with dynamic baseband characterization for supply-modulated PAs 162
Improvement of PHEMT Intermodulation Prediction Through the Accurate Modelling of Low-Frequency Dispersion Effects 160
Design of Low Phase Noise Dielectric Resonator Oscillators with GaInP HBT devices exploiting a Non-Linear Noise Model 160
EM-based Parasitic Elements Identification For Scalable Electron Device Modeling 159
Optimal function approximation for empirical look-up-table device models (invited) 157
Large-signal characterization of GaN-based transistors for accurate nonlinear modelling of dispersive effects 156
Nonlinear Thermal Resistance Characterization for Compact Electrothermal GaN HEMT Modelling 155
EM-based Modeling of Cascode FETs Suitable for MMIC Design 154
X-Band Power Amplifier for future generation SAR T/R Modules in HBT technology 151
Totale 19.731
Categoria #
all - tutte 58.072
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 58.072


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021689 0 0 0 0 0 0 0 0 0 0 0 689
2021/20226.083 446 82 704 637 756 603 629 594 631 209 347 445
2022/20232.486 271 341 122 295 119 178 89 122 465 58 217 209
2023/2024563 48 167 41 26 35 98 31 44 8 29 10 26
2024/20252.592 88 497 250 124 633 103 267 33 13 51 70 463
2025/20265.213 213 396 579 386 700 407 582 156 1.081 381 140 192
Totale 23.162