FILICORI, FABIO
 Distribuzione geografica
Continente #
NA - Nord America 11.051
AS - Asia 6.349
EU - Europa 4.482
AF - Africa 360
SA - Sud America 333
OC - Oceania 8
Continente sconosciuto - Info sul continente non disponibili 6
Totale 22.589
Nazione #
US - Stati Uniti d'America 10.998
VN - Vietnam 1.859
SG - Singapore 1.833
CN - Cina 1.523
GB - Regno Unito 1.184
DE - Germania 656
IT - Italia 540
SE - Svezia 443
UA - Ucraina 435
HK - Hong Kong 339
FR - Francia 313
IN - India 300
RU - Federazione Russa 264
BR - Brasile 223
IE - Irlanda 178
CI - Costa d'Avorio 157
JP - Giappone 135
EE - Estonia 97
ZA - Sudafrica 92
JO - Giordania 70
KR - Corea 69
CH - Svizzera 63
FI - Finlandia 63
NL - Olanda 60
AR - Argentina 47
BG - Bulgaria 47
TG - Togo 42
PH - Filippine 40
SC - Seychelles 38
CA - Canada 33
TH - Thailandia 29
BE - Belgio 28
AT - Austria 24
PL - Polonia 22
IQ - Iraq 19
BD - Bangladesh 18
EC - Ecuador 17
ID - Indonesia 17
ES - Italia 16
TW - Taiwan 16
GR - Grecia 15
TR - Turchia 15
PK - Pakistan 13
UZ - Uzbekistan 12
CL - Cile 11
CO - Colombia 10
MX - Messico 10
BO - Bolivia 9
CZ - Repubblica Ceca 9
LB - Libano 7
MY - Malesia 7
PY - Paraguay 7
EG - Egitto 6
NG - Nigeria 6
SA - Arabia Saudita 6
SI - Slovenia 6
VE - Venezuela 6
AU - Australia 5
IR - Iran 5
MA - Marocco 5
KE - Kenya 4
ET - Etiopia 3
EU - Europa 3
GE - Georgia 3
LT - Lituania 3
NZ - Nuova Zelanda 3
PE - Perù 3
BA - Bosnia-Erzegovina 2
DK - Danimarca 2
DO - Repubblica Dominicana 2
HR - Croazia 2
JM - Giamaica 2
KZ - Kazakistan 2
NO - Norvegia 2
NP - Nepal 2
OM - Oman 2
RO - Romania 2
TN - Tunisia 2
A1 - Anonimo 1
A2 - ???statistics.table.value.countryCode.A2??? 1
AF - Afghanistan, Repubblica islamica di 1
BB - Barbados 1
BH - Bahrain 1
BY - Bielorussia 1
BZ - Belize 1
CU - Cuba 1
DJ - Gibuti 1
DZ - Algeria 1
GN - Guinea 1
GT - Guatemala 1
LK - Sri Lanka 1
MD - Moldavia 1
MT - Malta 1
PS - Palestinian Territory 1
PT - Portogallo 1
QA - Qatar 1
RE - Reunion 1
RS - Serbia 1
SK - Slovacchia (Repubblica Slovacca) 1
SN - Senegal 1
Totale 22.583
Città #
Ann Arbor 3.918
Singapore 1.281
Southend 1.006
Fairfield 729
Ashburn 596
Chandler 572
Dong Ket 485
Houston 481
Santa Clara 480
Wilmington 444
Woodbridge 368
Hong Kong 320
San Jose 310
Jacksonville 301
Seattle 281
Ho Chi Minh City 271
Princeton 268
Hanoi 250
Cambridge 238
Hefei 178
Beijing 177
Dublin 177
Abidjan 157
Boardman 149
Nanjing 123
Lauterbourg 122
Tokyo 119
Westminster 112
Padova 106
Dallas 105
Bologna 103
Berlin 91
Medford 81
Los Angeles 80
Turin 76
Amman 70
Buffalo 63
Jinan 62
Seoul 58
Mülheim 56
San Diego 56
Saint Petersburg 52
Bern 50
Mantova 50
Munich 47
Hebei 46
Shenyang 46
Sofia 46
Lomé 42
Milan 41
Redondo Beach 38
Tianjin 38
Helsinki 37
Changsha 36
Haiphong 36
Mahé 34
Da Nang 33
Guangzhou 33
Des Moines 31
Shanghai 30
New York 29
Nanchang 28
Zhengzhou 28
Brussels 27
Frankfurt am Main 27
São Paulo 25
Braunschweig 24
Chicago 24
Taiyuan 23
Hangzhou 22
Turku 21
Orem 20
Jiaxing 19
Fuzhou 18
Council Bluffs 17
Tappahannock 17
Vienna 17
Warsaw 17
Bengaluru 16
Chennai 16
Hải Dương 16
Verona 16
Chengdu 15
Olalla 15
San Francisco 15
Atlanta 14
Falls Church 14
Taizhou 14
Baghdad 13
Haikou 13
Phoenix 13
Redmond 13
Shenzhen 13
Yubileyny 13
Montreal 12
Toronto 12
Wuhan 12
Biên Hòa 11
Dearborn 11
London 11
Totale 16.387
Nome #
Nonlinear RF device modelling in the presence of low-frequency dispersive phenomena 381
A Nonlinear Dynamic Model for Performance Analysis of Large-Signal Amplifiers in Communication Systems 301
C Band DROs Using Microwave Bipolar Devices: Nonlinear Design Technique and Noise Model for Phase Noise Prediction 299
Numerically efficient design of highly linear microwave power amplifiers 280
Charge-controlled GaN FET modeling by displacement current integration from frequency-domain NVNA measurements 270
10 Watt High Efficiency GaAs MMIC Power Amplifier for Space Applications 263
A GaN HEMT Global Large-Signal Model Including Charge Trapping for Multibias Operation 254
A Double-Pulse Technique for the Dynamic I/V Characterization of GaN FETs 248
A Non-Linear Noise Model of Bipolar Transistors for the Phase-Noise Performance Analysis of Microwave Oscillators 233
Global modeling of GaN HEMT resistive current including charge trapping and self-heating for multi-bias multi-class PA performance prediction 230
A 40 watt C-band MMIC high power amplifier for space radar application exploiting a 0.25 um AlGaN/GaN on SiC process 226
An Empirical Bipolar Device Nonlinear Noise Modeling Approach for Large-Signal Microwave Circuit Analysis 223
Accurate EM-based Modeling of Cascode FETs 223
Identification Procedures for the Charge-Controlled Non-Linear Noise Model of Microwave Electron Devices 222
On the use of the Discrete-Time Convolution Model for the compensation of non-idealities within digital acquisition channels 222
A Nonquasi-Static Empirical Model of Electron Devices 219
A Simple Technique for Measuring the Thermal Impedance and the Thermal Resistance of HBTs 216
A new technique for thermal resistance measurement in power electron devices 214
Pre-pulsing characterization of GaN PAs with dynamic supply 214
Behavioral modeling of RF PAs under wideband load modulation 214
Automated Microwave Device Characterization Set-Up Based on a Technology-Independent Generalized Bias System 213
Charge-conservative GaN HEMT nonlinear modeling from non-isodynamic multi-bias S-parameter measurements 213
Hardware Implementation of a Broad-Band Vector Spectrum Analyzer Based on Randomized Sampling 211
Hybrid High Power Amplifiers for L-Band Space Application 207
A Dual-Source Nonlinear Measurement System Oriented to the Empirical Characterization of Low-Frequency Dispersion in Microwave Electron Devices 205
Multitone Multiharmonic Scattering Parameters for the Characterization of Nonlinear Networks 205
Automatic Extraction of Measurement-Based Large-Signal FET Models by Nonlinear Function Sampling 205
A distributed approach for millimetre-wave electron device modelingA distributed approach for millimetre-wave electron device modeling 204
Accurate Nonlinear Electron Device Modelling for Cold FET Mixer Design 204
A Prepulsing Technique for the Characterization of GaN Power Amplifiers With Dynamic Supply Under Controlled Thermal and Trapping States 201
A C-band GaAs-pHEMT MMIC low phase noise VCO for space applications using a new cyclostationary nonlinear noise model 200
Evaluation of GaN FET power performance reduction due to nonlinear charge trapping effects 200
Validation and Comparison of PA models 199
A generalized CAD interface for nonlinear dynamic electron device models 199
An empirical behavioral model for RF PAs including self-heating 199
New pulsed measurement setup for GaN and GaAs FETs characterization 197
Active baseband drain-supply terminal load-pull of an X-band GaN MMIC PA 197
Characterization and compensation of dynamic non-linearities in digital data acquisition channels by means of the Discrete-Time Convolution Model 196
Envelope Tracking of an RF High Power Amplifier With an 8-Level Digitally Controlled GaN-on-Si Supply Modulator 194
A Two-Port Nonlinear Dynamic Behavioral Model of RF PAs Subject to Wideband Load Modulation 194
Compact empirical modeling of nonlinear dynamic thermal effects in electron devices 193
GaN FET Nonlinear Modeling Based on Double Pulse I/V Characteristics 193
Multi-bias nonlinear characterization of GaN FET trapping effects through a multiple pulse time domain network analyzer 193
A 48Watt and 60dB Gain Hybrid Power Line-Up for an L-Band T/R Module of a Space SAR Antenna 192
On-Wafer I/V Measurement Setup for the Characterization of Low-Frequency Dispersion in Electron Devices 190
Large-signal GaN transistor characterization and modeling including charge trapping nonlinear dynamics 190
Automated Microwave-Device Characterization Setup Based on a Technology-Independent Generalized Bias System 189
Accurate modeling of electron device I/V characteristics through a simplified large-signal measurement setup 189
A simple non-quasi-static non-linear model of electron devices 189
Scalable nonlinear FET model based on a distributed parasitic network description 188
Characterization of the Nonlinear Thermal Resistance and Pulsed Thermal Dynamic Behavior of AlGaN–GaN HEMTs on SiC 188
An Active Bias Network for the Characterization of Low-Frequency Dispersion in High-Power Microwave Electron Devices 188
A Procedure for GaN HEMT Charge Functions Extraction from Multi-Bias S-Parameters 188
A Three-Port Nonlinear Dynamic Behavioral Model for Supply-Modulated RF PAs 187
Measurement-Based Automatic Extraction of FET Parasitic Network by Linear Regression 187
Non-linear dynamic modelling of broad-band GHz-field Analogue-to-Digital acquisition channels 186
Iso-thermal and iso-dynamic direct charge function characterization of GaN FET with single large-signal measurement 186
Push-Push X Band GaInP/GaAs VCO With a Fully Monolithic Microstrip Resonator 185
Wattmeters 184
Small-Signal Operation-Based Simplified Verification of Non-Linear Models for Millimeter-Wave Electron Devices 182
Accurate PHEMT Intermodulation Prediction in the Presence of Low-Frequency Dispersion Effects 182
Stability Analysis and Design Criteria of Paralleled-Device Power Amplifiers Under Large-Signal Regime 181
Scalable Equivalent Circuit FET Model for MMIC Design Identified Through FW-EM-Analyses 180
Two-Input Nonlinear Dynamic Model Inversion for the Linearization of Envelope-Tracking RF PAs 179
Accurate Small- and Large-Signal Predictions Using a Simple, Nonquasi-Static, Empirical Model 179
A V band singly balanced diode mixer for space application 179
Thermal characterization of nonlinear charge trapping effects in GaN-FETs 178
Design of 40-W AlGaN/GaN MMIC High Power Amplifiers for C-Band SAR Applications 177
Extraction of an Extrinsic Parasitic Network for Accurate mm-Wave FET Scalable Modeling on the Basis of Full-Wave EM Simulation 174
Nonlinear charge trapping effects on pulsed I/V characteristics of GaN FETs 173
A fully nonlinear compact modeling approach for high-frequency noise in large-signal operated microwave electron devices 172
Characterization and modelling of broad-band GHz-field A/D acquisition channels by means of the Discrete-Time Convolution Model behavioural approach 171
Characterization of GaN and GaAs FETs through a new pulsed measurement system 170
An electromagnetic method for measuring AC losses in HTS tapes without lock-in amplifier 170
Simplified Validation of Non-Linear Models for Micro- and Millimeter-Wave Electron Devices 169
Nonquasi-Static Large-Signal Model of GaN FETs through an Equivalent Voltage Approach 169
Hardware Implementation of a Broad-Band Vector Spectrum Analyzer Based on Randomized Sampling 169
Breakdown Walkout Investigation in Electron Devices Under Nonlinear Dynamic Regime 169
Nonlinear Modelling of InP Devices for W-band Applications 168
Noise Measurements for Microwave Electron Device Characterization and Modelling Under Non-Linear Operating Conditions 168
Active baseband drain-supply terminal load-pull of an X-band GaN MMIC PA 168
Modelling and Design of a Wideband 6-18 GHz GaN Resistive Mixer 167
An Innovative Two-Source Large-Signal Measurement System for the Characterization of Low-Frequency Dispersive Effects in FETs 165
Nonlinear dispersive effects modelling for the accurate drain current prediction in GaN-based microwave power amplifiers 164
Electro-Thermal Characterization And Compact Modelling of GaN HEMTs for Microwave Applications 164
Nonlinear charge trapping effects on pulsed I/V characteristics of GaN FETs 164
Low phase noise oscillator topologies: Theory and application to MMIC VCOs 164
The Charge-Controlled Nonlinear Noise Modeling Approach for the Design of MMIC GaAs-pHEMT VCOs for Space Applications 164
Electrical measurement of the junction temperature and thermal resistance of HBTs 162
Electron Device Model Parameter Identification Through Large-Signal-Predictive Small-Signal-Based Error Functions 161
Mixer-like modeling with dynamic baseband characterization for supply-modulated PAs 160
Scalable Equivalent Circuit PHEMT modelling using an EM-based parasitic network description 159
Improvement of PHEMT Intermodulation Prediction Through the Accurate Modelling of Low-Frequency Dispersion Effects 159
EM-based Parasitic Elements Identification For Scalable Electron Device Modeling 157
Design of Low Phase Noise Dielectric Resonator Oscillators with GaInP HBT devices exploiting a Non-Linear Noise Model 157
Large-signal characterization of GaN-based transistors for accurate nonlinear modelling of dispersive effects 156
EM-based Modeling of Cascode FETs Suitable for MMIC Design 154
Optimal function approximation for empirical look-up-table device models (invited) 152
Nonlinear Thermal Resistance Characterization for Compact Electrothermal GaN HEMT Modelling 150
Empirical Nonlinear Noise Models of Field-Effect Devices for Microwave Circuit Large-Signal Noise Analysis 148
Totale 19.434
Categoria #
all - tutte 55.324
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 55.324


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021890 0 0 0 0 0 0 0 0 0 101 100 689
2021/20226.083 446 82 704 637 756 603 629 594 631 209 347 445
2022/20232.486 271 341 122 295 119 178 89 122 465 58 217 209
2023/2024563 48 167 41 26 35 98 31 44 8 29 10 26
2024/20252.592 88 497 250 124 633 103 267 33 13 51 70 463
2025/20264.825 213 396 579 386 700 407 582 156 1.081 325 0 0
Totale 22.774