CRIS Current Research Information System

FILICORI, FABIO
 Distribuzione geografica
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Continente #
NA - Nord America 11.475
AS - Asia 6.420
EU - Europa 4.571
AF - Africa 364
SA - Sud America 344
Continente sconosciuto - Info sul continente non disponibili 191
OC - Oceania 9
Totale 23.374
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Nazione #
US - Stati Uniti d'America 11.397
VN - Vietnam 1.860
SG - Singapore 1.856
CN - Cina 1.551
GB - Regno Unito 1.187
DE - Germania 660
IT - Italia 612
SE - Svezia 443
UA - Ucraina 436
HK - Hong Kong 346
FR - Francia 313
IN - India 301
RU - Federazione Russa 265
BR - Brasile 228
IE - Irlanda 178
CI - Costa d'Avorio 157
JP - Giappone 136
EE - Estonia 97
ZA - Sudafrica 93
JO - Giordania 70
KR - Corea 69
CH - Svizzera 64
FI - Finlandia 63
NL - Olanda 60
AR - Argentina 50
BG - Bulgaria 47
CA - Canada 42
TG - Togo 42
SC - Seychelles 41
PH - Filippine 40
TH - Thailandia 29
BE - Belgio 28
BD - Bangladesh 26
AT - Austria 24
PL - Polonia 23
IQ - Iraq 19
EC - Ecuador 18
ID - Indonesia 17
ES - Italia 16
TW - Taiwan 16
GR - Grecia 15
TR - Turchia 15
PK - Pakistan 13
UZ - Uzbekistan 12
CL - Cile 11
CO - Colombia 11
MX - Messico 11
BO - Bolivia 10
CZ - Repubblica Ceca 9
JM - Giamaica 7
LB - Libano 7
MY - Malesia 7
PY - Paraguay 7
AU - Australia 6
EG - Egitto 6
NG - Nigeria 6
SA - Arabia Saudita 6
SI - Slovenia 6
VE - Venezuela 6
IR - Iran 5
MA - Marocco 5
KE - Kenya 4
MD - Moldavia 4
DO - Repubblica Dominicana 3
ET - Etiopia 3
EU - Europa 3
GE - Georgia 3
HN - Honduras 3
LT - Lituania 3
NP - Nepal 3
NZ - Nuova Zelanda 3
PE - Perù 3
RO - Romania 3
BA - Bosnia-Erzegovina 2
BB - Barbados 2
CR - Costa Rica 2
DK - Danimarca 2
HR - Croazia 2
KZ - Kazakistan 2
MK - Macedonia 2
NO - Norvegia 2
OM - Oman 2
PR - Porto Rico 2
SV - El Salvador 2
TN - Tunisia 2
A1 - Anonimo 1
A2 - ???statistics.table.value.countryCode.A2??? 1
AF - Afghanistan, Repubblica islamica di 1
BH - Bahrain 1
BY - Bielorussia 1
BZ - Belize 1
CU - Cuba 1
DJ - Gibuti 1
DZ - Algeria 1
GN - Guinea 1
GT - Guatemala 1
KH - Cambogia 1
LK - Sri Lanka 1
MT - Malta 1
PS - Palestinian Territory 1
Totale 23.178
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Città #
Ann Arbor 3.918
Singapore 1.302
Southend 1.006
Fairfield 729
Ashburn 607
Chandler 572
Santa Clara 497
Dong Ket 485
Houston 483
Wilmington 444
Woodbridge 368
San Jose 342
Hong Kong 327
Jacksonville 302
Seattle 282
Ho Chi Minh City 272
Princeton 268
Hanoi 250
Cambridge 238
Beijing 188
Hefei 178
Dublin 177
Abidjan 157
Boardman 154
Council Bluffs 123
Nanjing 123
Lauterbourg 122
Tokyo 120
Westminster 113
Dallas 110
Bologna 107
Padova 106
Berlin 93
Los Angeles 83
Medford 81
Turin 81
Amman 70
Buffalo 64
Jinan 62
Milan 62
San Diego 60
Seoul 58
Mülheim 56
Saint Petersburg 52
Bern 50
Mantova 50
Munich 47
Hebei 46
Shenyang 46
Sofia 46
Lomé 42
Redondo Beach 38
Tianjin 38
Changsha 37
Helsinki 37
Haiphong 36
New York 36
Mahé 34
Da Nang 33
Guangzhou 33
Des Moines 31
Shanghai 31
Nanchang 28
Zhengzhou 28
Brussels 27
Chicago 27
Frankfurt am Main 27
São Paulo 26
Rome 25
Braunschweig 24
Taiyuan 23
Hangzhou 22
Orem 22
Turku 21
Jiaxing 19
Fuzhou 18
Atlanta 17
San Francisco 17
Tappahannock 17
Vienna 17
Warsaw 17
Bengaluru 16
Chennai 16
Hải Dương 16
Verona 16
Chengdu 15
Olalla 15
Falls Church 14
Phoenix 14
Taizhou 14
Toronto 14
Baghdad 13
Haikou 13
Montreal 13
Redmond 13
Shenzhen 13
Yubileyny 13
London 12
Moscow 12
Wuhan 12
Totale 16.689
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Nome #
Nonlinear RF device modelling in the presence of low-frequency dispersive phenomena 386
A Nonlinear Dynamic Model for Performance Analysis of Large-Signal Amplifiers in Communication Systems 304
C Band DROs Using Microwave Bipolar Devices: Nonlinear Design Technique and Noise Model for Phase Noise Prediction 304
Numerically efficient design of highly linear microwave power amplifiers 286
Charge-controlled GaN FET modeling by displacement current integration from frequency-domain NVNA measurements 275
10 Watt High Efficiency GaAs MMIC Power Amplifier for Space Applications 271
A GaN HEMT Global Large-Signal Model Including Charge Trapping for Multibias Operation 262
A Double-Pulse Technique for the Dynamic I/V Characterization of GaN FETs 250
Global modeling of GaN HEMT resistive current including charge trapping and self-heating for multi-bias multi-class PA performance prediction 240
A Non-Linear Noise Model of Bipolar Transistors for the Phase-Noise Performance Analysis of Microwave Oscillators 237
A 40 watt C-band MMIC high power amplifier for space radar application exploiting a 0.25 um AlGaN/GaN on SiC process 231
On the use of the Discrete-Time Convolution Model for the compensation of non-idealities within digital acquisition channels 228
An Empirical Bipolar Device Nonlinear Noise Modeling Approach for Large-Signal Microwave Circuit Analysis 228
Accurate EM-based Modeling of Cascode FETs 228
Identification Procedures for the Charge-Controlled Non-Linear Noise Model of Microwave Electron Devices 226
A Nonquasi-Static Empirical Model of Electron Devices 222
A Simple Technique for Measuring the Thermal Impedance and the Thermal Resistance of HBTs 220
Multitone Multiharmonic Scattering Parameters for the Characterization of Nonlinear Networks 219
Charge-conservative GaN HEMT nonlinear modeling from non-isodynamic multi-bias S-parameter measurements 218
Automated Microwave Device Characterization Set-Up Based on a Technology-Independent Generalized Bias System 217
Behavioral modeling of RF PAs under wideband load modulation 217
A new technique for thermal resistance measurement in power electron devices 216
Pre-pulsing characterization of GaN PAs with dynamic supply 216
Hardware Implementation of a Broad-Band Vector Spectrum Analyzer Based on Randomized Sampling 214
A distributed approach for millimetre-wave electron device modelingA distributed approach for millimetre-wave electron device modeling 212
Hybrid High Power Amplifiers for L-Band Space Application 212
A Dual-Source Nonlinear Measurement System Oriented to the Empirical Characterization of Low-Frequency Dispersion in Microwave Electron Devices 212
Automatic Extraction of Measurement-Based Large-Signal FET Models by Nonlinear Function Sampling 212
Accurate Nonlinear Electron Device Modelling for Cold FET Mixer Design 207
Validation and Comparison of PA models 206
A Prepulsing Technique for the Characterization of GaN Power Amplifiers With Dynamic Supply Under Controlled Thermal and Trapping States 206
An empirical behavioral model for RF PAs including self-heating 205
A C-band GaAs-pHEMT MMIC low phase noise VCO for space applications using a new cyclostationary nonlinear noise model 204
New pulsed measurement setup for GaN and GaAs FETs characterization 204
A 48Watt and 60dB Gain Hybrid Power Line-Up for an L-Band T/R Module of a Space SAR Antenna 202
A generalized CAD interface for nonlinear dynamic electron device models 201
Characterization and compensation of dynamic non-linearities in digital data acquisition channels by means of the Discrete-Time Convolution Model 201
Evaluation of GaN FET power performance reduction due to nonlinear charge trapping effects 201
Active baseband drain-supply terminal load-pull of an X-band GaN MMIC PA 200
Accurate modeling of electron device I/V characteristics through a simplified large-signal measurement setup 199
On-Wafer I/V Measurement Setup for the Characterization of Low-Frequency Dispersion in Electron Devices 198
A Two-Port Nonlinear Dynamic Behavioral Model of RF PAs Subject to Wideband Load Modulation 198
Envelope Tracking of an RF High Power Amplifier With an 8-Level Digitally Controlled GaN-on-Si Supply Modulator 197
Large-signal GaN transistor characterization and modeling including charge trapping nonlinear dynamics 196
Compact empirical modeling of nonlinear dynamic thermal effects in electron devices 194
GaN FET Nonlinear Modeling Based on Double Pulse I/V Characteristics 194
Multi-bias nonlinear characterization of GaN FET trapping effects through a multiple pulse time domain network analyzer 194
Scalable nonlinear FET model based on a distributed parasitic network description 193
Non-linear dynamic modelling of broad-band GHz-field Analogue-to-Digital acquisition channels 193
Measurement-Based Automatic Extraction of FET Parasitic Network by Linear Regression 193
Push-Push X Band GaInP/GaAs VCO With a Fully Monolithic Microstrip Resonator 192
Automated Microwave-Device Characterization Setup Based on a Technology-Independent Generalized Bias System 192
A simple non-quasi-static non-linear model of electron devices 191
Characterization of the Nonlinear Thermal Resistance and Pulsed Thermal Dynamic Behavior of AlGaN–GaN HEMTs on SiC 190
A Procedure for GaN HEMT Charge Functions Extraction from Multi-Bias S-Parameters 190
Wattmeters 189
An Active Bias Network for the Characterization of Low-Frequency Dispersion in High-Power Microwave Electron Devices 189
Accurate PHEMT Intermodulation Prediction in the Presence of Low-Frequency Dispersion Effects 189
Iso-thermal and iso-dynamic direct charge function characterization of GaN FET with single large-signal measurement 189
A Three-Port Nonlinear Dynamic Behavioral Model for Supply-Modulated RF PAs 188
Small-Signal Operation-Based Simplified Verification of Non-Linear Models for Millimeter-Wave Electron Devices 187
Stability Analysis and Design Criteria of Paralleled-Device Power Amplifiers Under Large-Signal Regime 187
Scalable Equivalent Circuit FET Model for MMIC Design Identified Through FW-EM-Analyses 185
An electromagnetic method for measuring AC losses in HTS tapes without lock-in amplifier 184
Accurate Small- and Large-Signal Predictions Using a Simple, Nonquasi-Static, Empirical Model 182
Design of 40-W AlGaN/GaN MMIC High Power Amplifiers for C-Band SAR Applications 181
Two-Input Nonlinear Dynamic Model Inversion for the Linearization of Envelope-Tracking RF PAs 181
Thermal characterization of nonlinear charge trapping effects in GaN-FETs 180
A V band singly balanced diode mixer for space application 180
A fully nonlinear compact modeling approach for high-frequency noise in large-signal operated microwave electron devices 177
Extraction of an Extrinsic Parasitic Network for Accurate mm-Wave FET Scalable Modeling on the Basis of Full-Wave EM Simulation 176
An Innovative Two-Source Large-Signal Measurement System for the Characterization of Low-Frequency Dispersive Effects in FETs 175
Simplified Validation of Non-Linear Models for Micro- and Millimeter-Wave Electron Devices 174
Nonlinear charge trapping effects on pulsed I/V characteristics of GaN FETs 174
Nonlinear charge trapping effects on pulsed I/V characteristics of GaN FETs 174
Hardware Implementation of a Broad-Band Vector Spectrum Analyzer Based on Randomized Sampling 174
Nonlinear Modelling of InP Devices for W-band Applications 173
Characterization and modelling of broad-band GHz-field A/D acquisition channels by means of the Discrete-Time Convolution Model behavioural approach 173
Characterization of GaN and GaAs FETs through a new pulsed measurement system 173
Noise Measurements for Microwave Electron Device Characterization and Modelling Under Non-Linear Operating Conditions 171
Modelling and Design of a Wideband 6-18 GHz GaN Resistive Mixer 170
Nonquasi-Static Large-Signal Model of GaN FETs through an Equivalent Voltage Approach 170
Breakdown Walkout Investigation in Electron Devices Under Nonlinear Dynamic Regime 170
Active baseband drain-supply terminal load-pull of an X-band GaN MMIC PA 170
Electrical measurement of the junction temperature and thermal resistance of HBTs 169
Nonlinear dispersive effects modelling for the accurate drain current prediction in GaN-based microwave power amplifiers 167
The Charge-Controlled Nonlinear Noise Modeling Approach for the Design of MMIC GaAs-pHEMT VCOs for Space Applications 167
Electro-Thermal Characterization And Compact Modelling of GaN HEMTs for Microwave Applications 166
Low phase noise oscillator topologies: Theory and application to MMIC VCOs 166
Electron Device Model Parameter Identification Through Large-Signal-Predictive Small-Signal-Based Error Functions 164
Improvement of PHEMT Intermodulation Prediction Through the Accurate Modelling of Low-Frequency Dispersion Effects 164
Mixer-like modeling with dynamic baseband characterization for supply-modulated PAs 164
Scalable Equivalent Circuit PHEMT modelling using an EM-based parasitic network description 162
Design of Low Phase Noise Dielectric Resonator Oscillators with GaInP HBT devices exploiting a Non-Linear Noise Model 161
EM-based Parasitic Elements Identification For Scalable Electron Device Modeling 160
Optimal function approximation for empirical look-up-table device models (invited) 158
Large-signal characterization of GaN-based transistors for accurate nonlinear modelling of dispersive effects 158
Nonlinear Thermal Resistance Characterization for Compact Electrothermal GaN HEMT Modelling 157
EM-based Modeling of Cascode FETs Suitable for MMIC Design 154
Empirical Nonlinear Noise Models of Field-Effect Devices for Microwave Circuit Large-Signal Noise Analysis 152
Totale 19.878
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Categoria #
all - tutte 59.943
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 59.943
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20225.637 0 82 704 637 756 603 629 594 631 209 347 445
2022/20232.486 271 341 122 295 119 178 89 122 465 58 217 209
2023/2024563 48 167 41 26 35 98 31 44 8 29 10 26
2024/20252.592 88 497 250 124 633 103 267 33 13 51 70 463
2025/20265.220 213 396 579 386 700 407 582 156 1.081 381 140 199
2026/2027205 124 81 0 0 0 0 0 0 0 0 0 0
Totale 23.374