An empirical non-linear noise model for bipolar transistors, deriving from the Charge-Controlled Non-linear Noise (CCNN) modelling approach, has been developed and implemented. The noise model of a GaInP-GaAs HBT device has been experimentally characterized on the basis of both biasdependent low-frequency noise data and a set of phase-noise measurements. To this aim, a special-purpose laboratory set-up has been implemented, which allows for phase-noise measurements on an on-wafer device sample under a wide set of different large-signal oscillating conditions. Good agreement was found between the predicted performance and the phase-noise measurements carried out on a MMIC VCO designed by using the proposed non-linear noise model
Titolo: | A Non-Linear Noise Model of Bipolar Transistors for the Phase-Noise Performance Analysis of Microwave Oscillators | |
Autore/i: | FLORIAN, CORRADO; TRAVERSO, PIER ANDREA; M. Borgarino; FILICORI, FABIO | |
Autore/i Unibo: | ||
Anno: | 2006 | |
Titolo del libro: | Symposium Digest | |
Pagina iniziale: | 659 | |
Pagina finale: | 662 | |
Abstract: | An empirical non-linear noise model for bipolar transistors, deriving from the Charge-Controlled Non-linear Noise (CCNN) modelling approach, has been developed and implemented. The noise model of a GaInP-GaAs HBT device has been experimentally characterized on the basis of both biasdependent low-frequency noise data and a set of phase-noise measurements. To this aim, a special-purpose laboratory set-up has been implemented, which allows for phase-noise measurements on an on-wafer device sample under a wide set of different large-signal oscillating conditions. Good agreement was found between the predicted performance and the phase-noise measurements carried out on a MMIC VCO designed by using the proposed non-linear noise model | |
Data prodotto definitivo in UGOV: | 2-ott-2006 | |
Appare nelle tipologie: | 4.01 Contributo in Atti di convegno |