An empirical non-linear noise model for bipolar transistors, deriving from the Charge-Controlled Non-linear Noise (CCNN) modelling approach, has been developed and implemented. The noise model of a GaInP-GaAs HBT device has been experimentally characterized on the basis of both biasdependent low-frequency noise data and a set of phase-noise measurements. To this aim, a special-purpose laboratory set-up has been implemented, which allows for phase-noise measurements on an on-wafer device sample under a wide set of different large-signal oscillating conditions. Good agreement was found between the predicted performance and the phase-noise measurements carried out on a MMIC VCO designed by using the proposed non-linear noise model
C. Florian, P. A. Traverso, M. Borgarino, F. Filicori (2006). A Non-Linear Noise Model of Bipolar Transistors for the Phase-Noise Performance Analysis of Microwave Oscillators. s.l : s.n.
A Non-Linear Noise Model of Bipolar Transistors for the Phase-Noise Performance Analysis of Microwave Oscillators
FLORIAN, CORRADO;TRAVERSO, PIER ANDREA;FILICORI, FABIO
2006
Abstract
An empirical non-linear noise model for bipolar transistors, deriving from the Charge-Controlled Non-linear Noise (CCNN) modelling approach, has been developed and implemented. The noise model of a GaInP-GaAs HBT device has been experimentally characterized on the basis of both biasdependent low-frequency noise data and a set of phase-noise measurements. To this aim, a special-purpose laboratory set-up has been implemented, which allows for phase-noise measurements on an on-wafer device sample under a wide set of different large-signal oscillating conditions. Good agreement was found between the predicted performance and the phase-noise measurements carried out on a MMIC VCO designed by using the proposed non-linear noise modelI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
