Large-signal modelling of electron devices for nonlinear MMIC design is a fundamental topic for the microwave community. Many different non-linear modelling approaches have been proposed in the last years, and quite often circuit designers suffer from the lack of reliable comparison criteria to identify which model (between those available) could be the most suitable for the desired application. Moreover, similar strategies are needed even from the research groups, whose activity is devoted to the model identification and extraction, in order to quantify the degree of accuracy achievable by the modelling approach adopted. In this paper an approach to verify large-signal model accuracy will be discussed, which is simply based on the comparison between de-embedded measurements and model predictions of Y-parameters versus the bias voltages at the intrinsic device ports.
A. Raffo, A. Santarelli, P. A. Traverso, G. Vannini, F. Filicori (2005). Simplified Validation of Non-Linear Models for Micro- and Millimeter-Wave Electron Devices. PARIS : GAAS Association.
Simplified Validation of Non-Linear Models for Micro- and Millimeter-Wave Electron Devices
SANTARELLI, ALBERTO;TRAVERSO, PIER ANDREA;FILICORI, FABIO
2005
Abstract
Large-signal modelling of electron devices for nonlinear MMIC design is a fundamental topic for the microwave community. Many different non-linear modelling approaches have been proposed in the last years, and quite often circuit designers suffer from the lack of reliable comparison criteria to identify which model (between those available) could be the most suitable for the desired application. Moreover, similar strategies are needed even from the research groups, whose activity is devoted to the model identification and extraction, in order to quantify the degree of accuracy achievable by the modelling approach adopted. In this paper an approach to verify large-signal model accuracy will be discussed, which is simply based on the comparison between de-embedded measurements and model predictions of Y-parameters versus the bias voltages at the intrinsic device ports.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.