Large-signal modelling of electron devices for nonlinear MMIC design is a fundamental topic for the microwave community. Many different non-linear modelling approaches have been proposed in the last years, and quite often circuit designers suffer from the lack of reliable comparison criteria to identify which model (between those available) could be the most suitable for the desired application. Moreover, similar strategies are needed even from the research groups, whose activity is devoted to the model identification and extraction, in order to quantify the degree of accuracy achievable by the modelling approach adopted. In this paper an approach to verify large-signal model accuracy will be discussed, which is simply based on the comparison between de-embedded measurements and model predictions of Y-parameters versus the bias voltages at the intrinsic device ports.

Simplified Validation of Non-Linear Models for Micro- and Millimeter-Wave Electron Devices / A. Raffo; A. Santarelli; P. A. Traverso; G. Vannini; F. Filicori. - STAMPA. - (2005), pp. 201-204. (Intervento presentato al convegno European Microwave Week, GAAS’05 tenutosi a Paris (France) nel Oct. 2005).

Simplified Validation of Non-Linear Models for Micro- and Millimeter-Wave Electron Devices

SANTARELLI, ALBERTO;TRAVERSO, PIER ANDREA;FILICORI, FABIO
2005

Abstract

Large-signal modelling of electron devices for nonlinear MMIC design is a fundamental topic for the microwave community. Many different non-linear modelling approaches have been proposed in the last years, and quite often circuit designers suffer from the lack of reliable comparison criteria to identify which model (between those available) could be the most suitable for the desired application. Moreover, similar strategies are needed even from the research groups, whose activity is devoted to the model identification and extraction, in order to quantify the degree of accuracy achievable by the modelling approach adopted. In this paper an approach to verify large-signal model accuracy will be discussed, which is simply based on the comparison between de-embedded measurements and model predictions of Y-parameters versus the bias voltages at the intrinsic device ports.
2005
Proceedings of European Microwave Week, GAAS’05
201
204
Simplified Validation of Non-Linear Models for Micro- and Millimeter-Wave Electron Devices / A. Raffo; A. Santarelli; P. A. Traverso; G. Vannini; F. Filicori. - STAMPA. - (2005), pp. 201-204. (Intervento presentato al convegno European Microwave Week, GAAS’05 tenutosi a Paris (France) nel Oct. 2005).
A. Raffo; A. Santarelli; P. A. Traverso; G. Vannini; F. Filicori
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/17726
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