EM-based Parasitic Elements Identification For Scalable Electron Device Modeling

Electron device modelling requires the accurate identification of a suitable parasitic network accounting for the passive structures which connects the intrinsic electron device to the external world. In conventional approaches, the parasitic network is described by a proper topology of lumped elements. As an alternative, a distributed description of the parasitic network can be conveniently adopted. This choice finds out to be a very good one when dealing with device scaling and very high operating frequencies. In this paper the parasitic network is described by means of a suitable distributed network identified through electromagnetic simulations of the device layout. Experimental results prove that such a distributed approach provides models, which linearly scale with the channel width and are capable of accurate predictions even under operation at much higher frequencies than the experimental characterisation range.