Electron device modelling requires the accurate identification of a suitable parasitic network accounting for the passive structures which connects the intrinsic electron device to the external world. In conventional approaches, the parasitic network is described by a proper topology of lumped elements. As an alternative, a distributed description of the parasitic network can be conveniently adopted. This choice finds out to be a very good one when dealing with device scaling and very high operating frequencies. In this paper the parasitic network is described by means of a suitable distributed network identified through electromagnetic simulations of the device layout. Experimental results prove that such a distributed approach provides models, which linearly scale with the channel width and are capable of accurate predictions even under operation at much higher frequencies than the experimental characterisation range.

EM-based Parasitic Elements Identification For Scalable Electron Device Modeling

RESCA, DAVIDE;SANTARELLI, ALBERTO;CIGNANI, RAFAEL;FILICORI, FABIO
2007

Abstract

Electron device modelling requires the accurate identification of a suitable parasitic network accounting for the passive structures which connects the intrinsic electron device to the external world. In conventional approaches, the parasitic network is described by a proper topology of lumped elements. As an alternative, a distributed description of the parasitic network can be conveniently adopted. This choice finds out to be a very good one when dealing with device scaling and very high operating frequencies. In this paper the parasitic network is described by means of a suitable distributed network identified through electromagnetic simulations of the device layout. Experimental results prove that such a distributed approach provides models, which linearly scale with the channel width and are capable of accurate predictions even under operation at much higher frequencies than the experimental characterisation range.
Proc. of 31th Workshop on Compound Semiconductor Devices and Integrated Circuits - WOCSDICE07
187
190
D. Resca; A. Santarelli; A. Raffo; R. Cignani; G. Vannini; F. Filicori
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11585/56903
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