A simple method is proposed to derive the junction temperature and the bias- and temperature-dependent thermal resistance of heterojunction bipolar transistors (HBTs) using a radio frequency (RF) signal. The method exploits the thermal dependence of the current gain of a transistor whose dissipated power is modified by applying an RF signal. The new method is used to derive the junction temperature and thermal resistance of a power HBT. The results are compared with state-of-the-art techniques.
Electrical measurement of the junction temperature and thermal resistance of HBTs / I. Melczarsky; J. A. Lonac; F. Filicori. - In: IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS. - ISSN 1531-1309. - STAMPA. - 16, N. 2, 2006:(2006), pp. 78-80. [10.1109/LMWC.2005.863202]
Electrical measurement of the junction temperature and thermal resistance of HBTs
MELCZARSKY, ILAN;LONAC, JULIO ANDRES;FILICORI, FABIO
2006
Abstract
A simple method is proposed to derive the junction temperature and the bias- and temperature-dependent thermal resistance of heterojunction bipolar transistors (HBTs) using a radio frequency (RF) signal. The method exploits the thermal dependence of the current gain of a transistor whose dissipated power is modified by applying an RF signal. The new method is used to derive the junction temperature and thermal resistance of a power HBT. The results are compared with state-of-the-art techniques.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
