A simple method is proposed to derive the junction temperature and the bias- and temperature-dependent thermal resistance of heterojunction bipolar transistors (HBTs) using a radio frequency (RF) signal. The method exploits the thermal dependence of the current gain of a transistor whose dissipated power is modified by applying an RF signal. The new method is used to derive the junction temperature and thermal resistance of a power HBT. The results are compared with state-of-the-art techniques.
I. Melczarsky, J. A. Lonac, F. Filicori (2006). Electrical measurement of the junction temperature and thermal resistance of HBTs. IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 16, N. 2, 2006, 78-80 [10.1109/LMWC.2005.863202].
Electrical measurement of the junction temperature and thermal resistance of HBTs
MELCZARSKY, ILAN;LONAC, JULIO ANDRES;FILICORI, FABIO
2006
Abstract
A simple method is proposed to derive the junction temperature and the bias- and temperature-dependent thermal resistance of heterojunction bipolar transistors (HBTs) using a radio frequency (RF) signal. The method exploits the thermal dependence of the current gain of a transistor whose dissipated power is modified by applying an RF signal. The new method is used to derive the junction temperature and thermal resistance of a power HBT. The results are compared with state-of-the-art techniques.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
