CRIS Current Research Information System

GIBIINO, GIAN PIERO
 Distribuzione geografica
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Continente #
NA - Nord America 7.762
AS - Asia 5.447
EU - Europa 3.539
AF - Africa 364
SA - Sud America 339
OC - Oceania 10
Continente sconosciuto - Info sul continente non disponibili 6
Totale 17.467
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Nazione #
US - Stati Uniti d'America 7.673
SG - Singapore 1.544
IT - Italia 1.318
CN - Cina 1.285
VN - Vietnam 1.271
GB - Regno Unito 535
DE - Germania 448
HK - Hong Kong 333
SE - Svezia 257
BD - Bangladesh 219
BR - Brasile 216
IN - India 200
FR - Francia 187
RU - Federazione Russa 157
CI - Costa d'Avorio 139
KR - Corea 138
IE - Irlanda 121
JP - Giappone 96
FI - Finlandia 85
ZA - Sudafrica 83
TG - Togo 79
NL - Olanda 75
AT - Austria 68
JO - Giordania 60
CA - Canada 57
PH - Filippine 52
UA - Ucraina 46
BE - Belgio 43
ID - Indonesia 40
TW - Taiwan 38
AR - Argentina 36
EE - Estonia 36
ES - Italia 32
CH - Svizzera 29
TH - Thailandia 29
IQ - Iraq 27
PK - Pakistan 26
PL - Polonia 25
BO - Bolivia 24
TR - Turchia 19
MX - Messico 17
SC - Seychelles 17
LT - Lituania 16
CO - Colombia 14
SA - Arabia Saudita 14
CL - Cile 13
EC - Ecuador 13
GR - Grecia 12
BG - Bulgaria 10
NG - Nigeria 10
VE - Venezuela 10
HR - Croazia 9
KE - Kenya 9
MY - Malesia 8
UZ - Uzbekistan 8
IL - Israele 7
AU - Australia 6
IR - Iran 6
LB - Libano 6
TN - Tunisia 6
PT - Portogallo 5
UY - Uruguay 5
AE - Emirati Arabi Uniti 4
CZ - Repubblica Ceca 4
DZ - Algeria 4
EG - Egitto 4
NO - Norvegia 4
PY - Paraguay 4
AL - Albania 3
AZ - Azerbaigian 3
ET - Etiopia 3
GT - Guatemala 3
JM - Giamaica 3
MA - Marocco 3
PE - Perù 3
RO - Romania 3
SI - Slovenia 3
BY - Bielorussia 2
EU - Europa 2
GH - Ghana 2
HN - Honduras 2
KZ - Kazakistan 2
NI - Nicaragua 2
NP - Nepal 2
NZ - Nuova Zelanda 2
SN - Senegal 2
A1 - Anonimo 1
A2 - ???statistics.table.value.countryCode.A2??? 1
AM - Armenia 1
BA - Bosnia-Erzegovina 1
BB - Barbados 1
BN - Brunei Darussalam 1
BS - Bahamas 1
BW - Botswana 1
CR - Costa Rica 1
CU - Cuba 1
CW - ???statistics.table.value.countryCode.CW??? 1
CY - Cipro 1
GN - Guinea 1
HU - Ungheria 1
Totale 17.450
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Città #
Ann Arbor 2.242
Singapore 1.069
Dallas 499
Ashburn 455
Southend 437
Fairfield 425
Bologna 389
Chandler 387
San Jose 381
Santa Clara 364
Hong Kong 310
Ho Chi Minh City 299
Wilmington 297
Hefei 271
Woodbridge 231
Hanoi 229
Houston 192
Seattle 175
Beijing 153
Cambridge 148
Boardman 143
Princeton 140
Abidjan 139
Dong Ket 135
Dublin 120
Seoul 119
New York 110
Milan 90
Lauterbourg 84
Los Angeles 82
Lomé 79
Mantova 76
Tokyo 73
Turin 64
Amman 58
Buffalo 58
Berlin 57
Nanjing 54
Munich 50
Council Bluffs 49
Rimini 48
Vienna 46
Westminster 45
Redondo Beach 41
Da Nang 40
Medford 40
Jinan 38
San Diego 38
Haiphong 37
Cesena 36
Helsinki 36
Frankfurt am Main 35
Guangzhou 35
São Paulo 35
Saint Petersburg 34
Chicago 33
Johannesburg 33
Padova 31
London 29
Rome 29
Vercelli 29
Shanghai 28
Lappeenranta 27
Amsterdam 26
Braunschweig 26
Brussels 25
Des Moines 25
Bengaluru 24
La Paz 24
Fremont 23
Montreal 23
Jakarta 21
Turku 21
Orem 20
Warsaw 20
Biên Hòa 18
Hangzhou 17
Baghdad 16
Nuremberg 16
Hebei 15
Taipei 15
Toronto 15
Atlanta 14
Brooklyn 14
Cervia 14
Hải Dương 14
Modena 14
Paris 14
Phoenix 14
San Francisco 14
Shenzhen 14
Bangkok 13
Can Tho 13
Changsha 13
Denver 13
San Lazzaro di Savena 13
Shenyang 13
Bern 11
Florence 11
Jiaxing 11
Totale 12.183
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Nome #
Experimental assessment of a broadband current sensor based on the x-hall architecture 356
The X-Hall Sensor: Toward Integrated Broadband Current Sensing 308
S-functions mixer modeling for linearization purposes 281
Charge-controlled GaN FET modeling by displacement current integration from frequency-domain NVNA measurements 273
A GaN HEMT Global Large-Signal Model Including Charge Trapping for Multibias Operation 261
A broadband current sensor based on the X-Hall architecture 254
A VNA-Based Wideband Measurement System for Large-Signal Characterization of Multiport Circuits 252
A Double-Pulse Technique for the Dynamic I/V Characterization of GaN FETs 250
A Behavioral Approach to Equivalent-Circuit Modeling of GaN MMIC Varactor Cells 243
Hall-Effect Current Sensors: Principles of Operation and Implementation Techniques 243
Global modeling of GaN HEMT resistive current including charge trapping and self-heating for multi-bias multi-class PA performance prediction 239
A bias network for small duty-cycle fast-pulsed measurement of RF power transistors 231
Enhancing K-Band Dual-Input Doherty PA Performance by Bayesian Optimization 216
Assessment of the Trap-Induced Insertion Loss Degradation of RF GaN Switches under Operating Regimes 216
Charge-conservative GaN HEMT nonlinear modeling from non-isodynamic multi-bias S-parameter measurements 216
Behavioral modeling of RF PAs under wideband load modulation 215
GaN power amplifier digital predistortion by multi-objective optimization for maximum RF output power 215
Multitone Multiharmonic Scattering Parameters for the Characterization of Nonlinear Networks 213
Error vector magnitude measurement for power amplifiers under wideband load impedance mismatch: System-level analysis and VNA-based implementation 209
Automatic Extraction of Measurement-Based Large-Signal FET Models by Nonlinear Function Sampling 208
Automatic Optimization of Input Split and Bias Voltage in Digitally Controlled Dual-Input Doherty RF PAs 207
Joint Dual-Input Digital Predistortion of Supply-Modulated RF PA by Surrogate-Based Multi-Objective Optimization 204
Double-pulse characterization of GaN-on-Sapphire FETs for technology development 203
Characterization and Modeling of RF GaN Switches Accounting for Trap-Induced Degradation Under Operating Regimes 203
An empirical behavioral model for RF PAs including self-heating 202
Evaluation of GaN FET power performance reduction due to nonlinear charge trapping effects 201
Active baseband drain-supply terminal load-pull of an X-band GaN MMIC PA 198
A Two-Port Nonlinear Dynamic Behavioral Model of RF PAs Subject to Wideband Load Modulation 197
Large-signal GaN transistor characterization and modeling including charge trapping nonlinear dynamics 195
GaN FET Nonlinear Modeling Based on Double Pulse I/V Characteristics 194
Isotrap Pulsed IV Characterization of GaN HEMTs for PA Design 194
Multi-bias nonlinear characterization of GaN FET trapping effects through a multiple pulse time domain network analyzer 194
Nonlinear Dynamic Modeling of RF PAs Using Custom Vector Fitting Algorithm 191
A Procedure for GaN HEMT Charge Functions Extraction from Multi-Bias S-Parameters 189
Measurement-Based Automatic Extraction of FET Parasitic Network by Linear Regression 189
Empirical Equivalent-Circuit Modeling of mm-Wave GaN MMIC Varactors by Network Synthesis 187
Static Characterization of the X-Hall Current Sensor in BCD10 Technology 187
A Three-Port Nonlinear Dynamic Behavioral Model for Supply-Modulated RF PAs 187
Iso-thermal and iso-dynamic direct charge function characterization of GaN FET with single large-signal measurement 187
Three Port Non-Linear Characterization of Power Amplifiers under Modulated Excitations Using a Vector Network Analyzer Platform 187
Beam-Dependent Active Array Linearization by Global Feature-Based Machine Learning 186
Thermal characterization of nonlinear charge trapping effects in GaN-FETs 180
Two-Input Nonlinear Dynamic Model Inversion for the Linearization of Envelope-Tracking RF PAs 180
A compact measurement set-up for envelope-tracking RF PAs with calibrated sensing of baseband V/I at the supply terminal 178
Load-pull measurements using Centroidal Voronoi Tessellation 178
A Reconfigurable Setup for the On-Wafer Characterization of the Dynamic RON of 600 V GaN Switches at Variable Operating Regimes 175
Nonlinear charge trapping effects on pulsed I/V characteristics of GaN FETs 173
Broadband Measurement of Error Vector Magnitude for Microwave Vector Signal Generators Using a Vector Network Analyzer 172
Nonlinear behavioral models of HEMTs using response surface methodology 172
Nonlinear charge trapping effects on pulsed I/V characteristics of GaN FETs 170
Microwave Characterization of Trapping Effects in 100-nm GaN-on-Si HEMT Technology 170
Active baseband drain-supply terminal load-pull of an X-band GaN MMIC PA 170
Nonlinear characterization of microwave power amplifiers with supply modulation 167
A measurement setup for digital predistortion using direct RF undersampling 166
Experimental evaluation of Hall-effect current sensors in BCD10 technology 164
Supply-Modulated PA Performance Enhancement by Joint Optimization of RF Input and Supply Control 163
Supply-terminal 40 MHz BW characterization of impedance-like nonlinear functions for envelope tracking PAs 162
Mixer-like modeling with dynamic baseband characterization for supply-modulated PAs 162
Hybrid nonlinear model for microwave active devices using kriging 160
Pulsed NVNA measurements for dynamic characterization of RF PAs 160
Wideband Active Load-Pull by Device Output Match Compensation Using a Vector Network Analyzer 157
Broadband error vector magnitude characterization of a GaN power amplifier using a vector network analyzer 157
Integrated Hall-Effect Broadband Current Sensor for SiC Traction Inverter 156
Trapping dynamics in gan hemts for millimeter-wave applications: Measurement-based characterization and technology comparison 156
A Comparative Study on Hall Plate Topologies in p-GaN Technology 153
Narrow-pulse-width double-pulsed S-parameters measurements of 100-nm GaN-on-Si HEMTs 152
Experimental Characterization of Charge Trapping Dynamics in 100-nm AlN/GaN/AlGaN-on-Si HEMTs by Wideband Transient Measurements 152
Efficient implementation of a modified-Volterra radio-frequency power amplifier nonlinear dynamic model by global rational functions approximation 147
Automated Measurement Set-Up for the Electro-Mechanical Characterization of Piezoelectric Harvesters 145
Measurement-Based FET Analytical Modeling Using the Nonlinear Function Sampling Approach 143
M2s parameters: A multi-tone multi-harmonic measurement approach for the characterization of nonlinear networks 139
VNA-based broadband EVM measurement of an RF nonlinear PA under load mismatch conditions 132
Digital post-distortion of an ADC analog front-end for gamma spectroscopy measurements 127
Design, characterisation, and digital linearisation of an ADC analogue front-end for gamma spectroscopy measurements 127
Nonlinear FET modeling from a single NVNA measurement by nonlinear function sampling 126
Enhanced wideband active load-pull with a vector network analyzer using modulated excitations and device output match compensation 125
Mixer-like modeling with dynamic baseband characterization for supply-modulated PAs 123
Experimental evaluation of sub-sampling IQ detection for low-level RF control in particle accelerator systems 123
null 120
An Integrated GaAs HBT Doherty Power Amplifier for Wi-Fi 6 120
Advancing RF GaN HEMTs: A Perspective on Measurement and Characterization Techniques 118
Nonlinear RF Modeling of GaN HEMTs with Fermi Kinetics Transport and the ASM-HEMT Compact Model [Young Professionals] 115
null 115
MMIC Power Amplifier in GaAs HBT Technology for Wi-Fi 6 Applications 115
Millimeter-Wave Implementation of Phased Array Emulation from Wideband Load-Pull Envelope Measurements 112
Wideband Automated Tuning of Ka-Band Dual Input Doherty MMIC PA using Bayesian optimization 109
Pulsed techniques for the characterization of low-frequency dispersive effects in RF power FETs using a flexible measurement set-up 107
null 106
Experimental Characterization of Drain Current Transient Effects in 'Buffer-Free' RF GaN HEMTs 105
RF GaN-HEMT Technology Evaluation Framework Based on Drain Current Transient Measurements 105
Modulated-Input Control and Linearization of a Multi-Port Millimeter-Wave PA by VNA-based Calibrated Wideband Measurements 104
Experimental Validation of a System-Level Model for Active Arrays Under Emulated Beam Steering 98
Evaluation of Integrated GaN Diodes as Varactors for Tunable MMIC PAs from C- to K-Band 97
Combined Wideband Active Load-Pull and Modulation Distortion Characterization with a Vector Network Analyzer 94
Evaluation of Trapping Dynamics in GaN HEMTs from Double-Pulse RF Load-Pull Measurements 93
Experimental technique for evaluating ADC aperture jitter in the frequency domain 90
Behavioral Modeling of GaN MMIC Varactors for Tunable Matching Networks 89
Comparing LSNA Calibrations: Large-Signal Network Analyzer Round Robin 85
Over-the-Air Digital Predistortion of 5G FR2 Beamformer Array by exploiting Linear Response Compensation 84
Analog Linearization of a 10-W GaN Power Amplifier by Baseband Feedback 81
Totale 17.005
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Categoria #
all - tutte 46.196
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 46.196
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021302 0 0 0 0 0 0 0 0 0 0 0 302
2021/20223.510 127 55 386 350 459 393 400 363 428 133 156 260
2022/20231.718 204 290 94 196 94 122 66 93 285 63 120 91
2023/2024729 40 178 30 66 37 91 63 81 33 32 34 44
2024/20252.566 111 285 215 193 486 103 298 68 61 94 170 482
2025/20266.558 324 580 869 457 678 345 595 237 1.226 482 368 397
Totale 17.794