CRIS Current Research Information System

GIBIINO, GIAN PIERO
 Distribuzione geografica
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Continente #
NA - Nord America 5.404
EU - Europa 2.335
AS - Asia 1.207
AF - Africa 170
SA - Sud America 14
Continente sconosciuto - Info sul continente non disponibili 4
OC - Oceania 4
Totale 9.138
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Nazione #
US - Stati Uniti d'America 5.398
IT - Italia 750
GB - Regno Unito 484
CN - Cina 368
DE - Germania 334
SG - Singapore 317
VN - Vietnam 257
SE - Svezia 245
IN - India 131
IE - Irlanda 109
RU - Federazione Russa 83
TG - Togo 79
FR - Francia 74
JO - Giordania 53
AT - Austria 50
ZA - Sudafrica 45
CI - Costa d'Avorio 40
EE - Estonia 35
UA - Ucraina 28
BE - Belgio 21
ID - Indonesia 19
CH - Svizzera 18
ES - Italia 18
NL - Olanda 18
FI - Finlandia 17
GR - Grecia 11
PL - Polonia 10
BG - Bulgaria 9
HR - Croazia 8
JP - Giappone 8
BR - Brasile 7
HK - Hong Kong 7
CA - Canada 6
CL - Cile 6
IL - Israele 6
PK - Pakistan 6
TR - Turchia 6
KR - Corea 5
TW - Taiwan 5
IR - Iran 4
BD - Bangladesh 3
LB - Libano 3
NG - Nigeria 3
NO - Norvegia 3
SA - Arabia Saudita 3
UZ - Uzbekistan 3
AU - Australia 2
CZ - Repubblica Ceca 2
EU - Europa 2
NZ - Nuova Zelanda 2
SC - Seychelles 2
SI - Slovenia 2
A1 - Anonimo 1
A2 - ???statistics.table.value.countryCode.A2??? 1
AZ - Azerbaigian 1
BY - Bielorussia 1
EG - Egitto 1
HU - Ungheria 1
MT - Malta 1
MY - Malesia 1
PE - Perù 1
PH - Filippine 1
PT - Portogallo 1
RO - Romania 1
SK - Slovacchia (Repubblica Slovacca) 1
Totale 9.138
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Città #
Ann Arbor 2.242
Southend 437
Fairfield 425
Chandler 387
Wilmington 297
Ashburn 286
Singapore 277
Woodbridge 231
Bologna 205
Houston 188
Seattle 173
Cambridge 148
Princeton 140
Dong Ket 135
Dublin 108
Lomé 79
Mantova 73
Turin 58
Berlin 57
Amman 53
Nanjing 53
Westminster 45
Santa Clara 42
Abidjan 40
Medford 40
New York 39
San Diego 36
Jinan 35
Saint Petersburg 34
Vienna 34
Milan 29
Padova 29
Vercelli 29
Beijing 27
Braunschweig 25
Des Moines 24
Boardman 20
Fremont 18
Brussels 17
Jakarta 17
Hebei 15
Cervia 14
Frankfurt am Main 13
Guangzhou 12
San Lazzaro di Savena 12
Shenyang 12
Amsterdam 11
Bern 11
Norwalk 11
Redmond 11
Rome 11
Shanghai 11
Cesena 10
Figino 10
Jiaxing 10
Olalla 10
Tianjin 10
Bresso 9
Changsha 9
Falls Church 9
Gothenburg 9
Hangzhou 9
Lappeenranta 9
Los Angeles 9
Modena 9
Nanchang 9
Sofia 9
Taiyuan 9
Warsaw 9
Carpinteria 8
Chicago 8
Helsinki 8
London 8
Reggio Emilia 8
Bagnacavallo 7
Chengdu 7
Ostra 7
Paris 7
Rimini 7
Shenzhen 7
São Paulo 7
Trento 7
Copparo 6
Bondeno 5
Columbus 5
Florence 5
Guiyang 5
Haikou 5
Munich 5
Ravenna 5
Redwood City 5
San Giorgio Di Piano 5
San Jose 5
Seville 5
Tokyo 5
Bremen 4
Bühl 4
Calamandrana 4
Chongqing 4
Dearborn 4
Totale 7.116
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Nome #
Charge-controlled GaN FET modeling by displacement current integration from frequency-domain NVNA measurements 195
A broadband current sensor based on the X-Hall architecture 190
A Double-Pulse Technique for the Dynamic I/V Characterization of GaN FETs 182
Experimental assessment of a broadband current sensor based on the x-hall architecture 181
The X-Hall Sensor: Toward Integrated Broadband Current Sensing 176
Global modeling of GaN HEMT resistive current including charge trapping and self-heating for multi-bias multi-class PA performance prediction 174
A bias network for small duty-cycle fast-pulsed measurement of RF power transistors 168
Assessment of the Trap-Induced Insertion Loss Degradation of RF GaN Switches under Operating Regimes 163
Active baseband drain-supply terminal load-pull of an X-band GaN MMIC PA 156
Behavioral modeling of RF PAs under wideband load modulation 153
Characterization and Modeling of RF GaN Switches Accounting for Trap-Induced Degradation Under Operating Regimes 153
Evaluation of GaN FET power performance reduction due to nonlinear charge trapping effects 148
Double-pulse characterization of GaN-on-Sapphire FETs for technology development 146
GaN FET Nonlinear Modeling Based on Double Pulse I/V Characteristics 146
Nonlinear Dynamic Modeling of RF PAs Using Custom Vector Fitting Algorithm 143
Charge-conservative GaN HEMT nonlinear modeling from non-isodynamic multi-bias S-parameter measurements 143
Three Port Non-Linear Characterization of Power Amplifiers under Modulated Excitations Using a Vector Network Analyzer Platform 140
Isotrap Pulsed IV Characterization of GaN HEMTs for PA Design 140
A GaN HEMT Global Large-Signal Model Including Charge Trapping for Multibias Operation 140
GaN power amplifier digital predistortion by multi-objective optimization for maximum RF output power 139
An empirical behavioral model for RF PAs including self-heating 137
A compact measurement set-up for envelope-tracking RF PAs with calibrated sensing of baseband V/I at the supply terminal 137
Load-pull measurements using Centroidal Voronoi Tessellation 135
Multi-bias nonlinear characterization of GaN FET trapping effects through a multiple pulse time domain network analyzer 134
Large-signal GaN transistor characterization and modeling including charge trapping nonlinear dynamics 133
Nonlinear characterization of microwave power amplifiers with supply modulation 133
Nonlinear behavioral models of HEMTs using response surface methodology 133
S-functions mixer modeling for linearization purposes 132
Thermal characterization of nonlinear charge trapping effects in GaN-FETs 131
A Two-Port Nonlinear Dynamic Behavioral Model of RF PAs Subject to Wideband Load Modulation 131
A Three-Port Nonlinear Dynamic Behavioral Model for Supply-Modulated RF PAs 130
Mixer-like modeling with dynamic baseband characterization for supply-modulated PAs 130
Active baseband drain-supply terminal load-pull of an X-band GaN MMIC PA 129
Hall-Effect Current Sensors: Principles of Operation and Implementation Techniques 129
A Procedure for GaN HEMT Charge Functions Extraction from Multi-Bias S-Parameters 128
Microwave Characterization of Trapping Effects in 100-nm GaN-on-Si HEMT Technology 127
Iso-thermal and iso-dynamic direct charge function characterization of GaN FET with single large-signal measurement 126
Two-Input Nonlinear Dynamic Model Inversion for the Linearization of Envelope-Tracking RF PAs 125
A measurement setup for digital predistortion using direct RF undersampling 125
Automatic Extraction of Measurement-Based Large-Signal FET Models by Nonlinear Function Sampling 125
Hybrid nonlinear model for microwave active devices using kriging 124
Measurement-Based Automatic Extraction of FET Parasitic Network by Linear Regression 123
Supply-terminal 40 MHz BW characterization of impedance-like nonlinear functions for envelope tracking PAs 122
Pulsed NVNA measurements for dynamic characterization of RF PAs 121
null 120
Nonlinear charge trapping effects on pulsed I/V characteristics of GaN FETs 116
null 115
Supply-Modulated PA Performance Enhancement by Joint Optimization of RF Input and Supply Control 115
Multitone Multiharmonic Scattering Parameters for the Characterization of Nonlinear Networks 110
Narrow-pulse-width double-pulsed S-parameters measurements of 100-nm GaN-on-Si HEMTs 108
null 106
Broadband error vector magnitude characterization of a GaN power amplifier using a vector network analyzer 105
Nonlinear charge trapping effects on pulsed I/V characteristics of GaN FETs 100
Error vector magnitude measurement for power amplifiers under wideband load impedance mismatch: System-level analysis and VNA-based implementation 100
Joint Dual-Input Digital Predistortion of Supply-Modulated RF PA by Surrogate-Based Multi-Objective Optimization 97
Wideband Active Load-Pull by Device Output Match Compensation Using a Vector Network Analyzer 90
Trapping dynamics in gan hemts for millimeter-wave applications: Measurement-based characterization and technology comparison 89
Efficient implementation of a modified-Volterra radio-frequency power amplifier nonlinear dynamic model by global rational functions approximation 89
Experimental Characterization of Charge Trapping Dynamics in 100-nm AlN/GaN/AlGaN-on-Si HEMTs by Wideband Transient Measurements 88
VNA-based broadband EVM measurement of an RF nonlinear PA under load mismatch conditions 88
Enhanced wideband active load-pull with a vector network analyzer using modulated excitations and device output match compensation 87
M2s parameters: A multi-tone multi-harmonic measurement approach for the characterization of nonlinear networks 84
Nonlinear FET modeling from a single NVNA measurement by nonlinear function sampling 79
Measurement-Based FET Analytical Modeling Using the Nonlinear Function Sampling Approach 77
A Reconfigurable Setup for the On-Wafer Characterization of the Dynamic RON of 600 V GaN Switches at Variable Operating Regimes 77
Design, characterisation, and digital linearisation of an ADC analogue front-end for gamma spectroscopy measurements 76
Mixer-like modeling with dynamic baseband characterization for supply-modulated PAs 75
Digital post-distortion of an ADC analog front-end for gamma spectroscopy measurements 75
Automatic Optimization of Input Split and Bias Voltage in Digitally Controlled Dual-Input Doherty RF PAs 73
Experimental evaluation of sub-sampling IQ detection for low-level RF control in particle accelerator systems 61
Combined Wideband Active Load-Pull and Modulation Distortion Characterization with a Vector Network Analyzer 59
A VNA-Based Wideband Measurement System for Large-Signal Characterization of Multiport Circuits 57
Pulsed techniques for the characterization of low-frequency dispersive effects in RF power FETs using a flexible measurement set-up 57
Beam-Dependent Active Array Linearization by Global Feature-Based Machine Learning 52
Broadband Measurement of Error Vector Magnitude for Microwave Vector Signal Generators Using a Vector Network Analyzer 49
Experimental evaluation of Hall-effect current sensors in BCD10 technology 41
Comparing LSNA Calibrations: Large-Signal Network Analyzer Round Robin 40
Automated Measurement Set-Up for the Electro-Mechanical Characterization of Piezoelectric Harvesters 35
Nonlinear RF Modeling of GaN HEMTs with Fermi Kinetics Transport and the ASM-HEMT Compact Model [Young Professionals] 33
Static Characterization of the X-Hall Current Sensor in BCD10 Technology 32
A Comparative Study on Hall Plate Topologies in p-GaN Technology 31
Over-the-Air Digital Predistortion of 5G FR2 Beamformer Array by exploiting Linear Response Compensation 29
Design of Experiments Using Centroidal Voronoi Tessellation 26
Compact behavioral models of nonlinear active devices using response surface methodology 26
Wideband Automated Tuning of Ka-Band Dual Input Doherty MMIC PA using Bayesian optimization 24
Takeaways From the First Workshop on Modeling and Optimization for Active Devices [Young Professionals] 23
RF GaN-HEMT Technology Evaluation Framework Based on Drain Current Transient Measurements 20
Analog Linearization of a 10-W GaN Power Amplifier by Baseband Feedback 20
Modulated-Input Control and Linearization of a Multi-Port Millimeter-Wave PA by VNA-based Calibrated Wideband Measurements 19
Impact of Broadband Modulation in Active Load-Pull On-Wafer Measurements of GaN HEMTs 18
Experimental Characterization of Drain Current Transient Effects in 'Buffer-Free' RF GaN HEMTs 5
VNA-Based Modulated Measurements for Polynomial Modeling and Linearization of RF Multipliers 4
Totale 9.376
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Categoria #
all - tutte 24.268
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 24.268
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20201.193 0 0 0 83 150 142 198 188 231 94 62 45
2020/2021980 130 47 67 13 29 30 58 68 158 50 28 302
2021/20223.510 127 55 386 350 459 393 400 363 428 133 156 260
2022/20231.718 204 290 94 196 94 122 66 93 285 63 120 91
2023/2024729 40 178 30 66 37 91 63 81 33 32 34 44
2024/2025706 111 285 215 95 0 0 0 0 0 0 0 0
Totale 9.376