GIBIINO, GIAN PIERO
 Distribuzione geografica
Continente #
NA - Nord America 7.359
AS - Asia 5.225
EU - Europa 3.338
AF - Africa 360
SA - Sud America 332
OC - Oceania 10
Continente sconosciuto - Info sul continente non disponibili 6
Totale 16.630
Nazione #
US - Stati Uniti d'America 7.295
SG - Singapore 1.538
CN - Cina 1.268
VN - Vietnam 1.267
IT - Italia 1.137
GB - Regno Unito 534
DE - Germania 443
HK - Hong Kong 328
SE - Svezia 257
BR - Brasile 211
IN - India 200
FR - Francia 187
RU - Federazione Russa 156
CI - Costa d'Avorio 139
KR - Corea 138
IE - Irlanda 121
JP - Giappone 96
FI - Finlandia 84
ZA - Sudafrica 82
TG - Togo 79
NL - Olanda 75
AT - Austria 68
JO - Giordania 60
PH - Filippine 52
UA - Ucraina 46
CA - Canada 42
BE - Belgio 40
ID - Indonesia 39
TW - Taiwan 38
AR - Argentina 36
EE - Estonia 36
BD - Bangladesh 32
ES - Italia 29
TH - Thailandia 29
IQ - Iraq 27
CH - Svizzera 25
PK - Pakistan 25
PL - Polonia 25
BO - Bolivia 24
TR - Turchia 18
MX - Messico 17
SC - Seychelles 17
CO - Colombia 14
LT - Lituania 14
SA - Arabia Saudita 14
CL - Cile 13
GR - Grecia 12
EC - Ecuador 11
BG - Bulgaria 10
NG - Nigeria 10
VE - Venezuela 10
HR - Croazia 9
MY - Malesia 8
UZ - Uzbekistan 8
IL - Israele 7
KE - Kenya 7
AU - Australia 6
IR - Iran 6
LB - Libano 6
TN - Tunisia 6
PT - Portogallo 5
UY - Uruguay 5
AE - Emirati Arabi Uniti 4
CZ - Repubblica Ceca 4
DZ - Algeria 4
EG - Egitto 4
NO - Norvegia 4
PY - Paraguay 4
AL - Albania 3
AZ - Azerbaigian 3
ET - Etiopia 3
MA - Marocco 3
PE - Perù 3
RO - Romania 3
SI - Slovenia 3
BY - Bielorussia 2
EU - Europa 2
GH - Ghana 2
KZ - Kazakistan 2
NP - Nepal 2
NZ - Nuova Zelanda 2
A1 - Anonimo 1
A2 - ???statistics.table.value.countryCode.A2??? 1
AM - Armenia 1
BA - Bosnia-Erzegovina 1
BN - Brunei Darussalam 1
BW - Botswana 1
CR - Costa Rica 1
CU - Cuba 1
CW - ???statistics.table.value.countryCode.CW??? 1
CY - Cipro 1
GN - Guinea 1
HN - Honduras 1
HU - Ungheria 1
JM - Giamaica 1
KH - Cambogia 1
LK - Sri Lanka 1
MD - Moldavia 1
MM - Myanmar 1
MT - Malta 1
Totale 16.617
Città #
Ann Arbor 2.242
Singapore 1.063
Dallas 494
Southend 437
Ashburn 430
Fairfield 425
Chandler 387
Bologna 355
Santa Clara 349
San Jose 313
Hong Kong 305
Wilmington 297
Ho Chi Minh City 295
Hefei 271
Woodbridge 231
Hanoi 229
Houston 190
Seattle 175
Cambridge 148
Beijing 145
Princeton 140
Abidjan 139
Dong Ket 135
Dublin 120
Seoul 119
Boardman 114
Lauterbourg 84
Lomé 79
Milan 79
New York 77
Mantova 76
Tokyo 73
Los Angeles 67
Turin 64
Amman 58
Berlin 57
Nanjing 54
Munich 50
Vienna 46
Buffalo 45
Westminster 45
Redondo Beach 41
Council Bluffs 40
Da Nang 40
Medford 40
Jinan 38
Haiphong 37
Cesena 36
Helsinki 36
San Diego 36
Frankfurt am Main 35
Guangzhou 35
Saint Petersburg 34
Johannesburg 33
Padova 31
São Paulo 31
Chicago 30
Vercelli 29
London 28
Lappeenranta 27
Amsterdam 26
Shanghai 26
Braunschweig 25
Des Moines 25
Bengaluru 24
Brussels 24
La Paz 24
Fremont 23
Jakarta 21
Turku 21
Warsaw 20
Montreal 19
Biên Hòa 18
Orem 18
Hangzhou 17
Baghdad 16
Nuremberg 16
Hebei 15
Rome 15
Taipei 15
Brooklyn 14
Cervia 14
Hải Dương 14
Modena 14
Paris 14
Shenzhen 14
Bangkok 13
Can Tho 13
San Lazzaro di Savena 13
Shenyang 13
Changsha 12
Atlanta 11
Bern 11
Jiaxing 11
Norwalk 11
Redmond 11
Taiyuan 11
Tianjin 11
Xi'an 11
Zhengzhou 11
Totale 11.814
Nome #
Experimental assessment of a broadband current sensor based on the x-hall architecture 351
The X-Hall Sensor: Toward Integrated Broadband Current Sensing 285
Charge-controlled GaN FET modeling by displacement current integration from frequency-domain NVNA measurements 270
A GaN HEMT Global Large-Signal Model Including Charge Trapping for Multibias Operation 254
A broadband current sensor based on the X-Hall architecture 253
S-functions mixer modeling for linearization purposes 252
A Double-Pulse Technique for the Dynamic I/V Characterization of GaN FETs 248
A VNA-Based Wideband Measurement System for Large-Signal Characterization of Multiport Circuits 243
Hall-Effect Current Sensors: Principles of Operation and Implementation Techniques 231
Global modeling of GaN HEMT resistive current including charge trapping and self-heating for multi-bias multi-class PA performance prediction 230
A bias network for small duty-cycle fast-pulsed measurement of RF power transistors 229
Behavioral modeling of RF PAs under wideband load modulation 214
GaN power amplifier digital predistortion by multi-objective optimization for maximum RF output power 214
Assessment of the Trap-Induced Insertion Loss Degradation of RF GaN Switches under Operating Regimes 213
Charge-conservative GaN HEMT nonlinear modeling from non-isodynamic multi-bias S-parameter measurements 213
Multitone Multiharmonic Scattering Parameters for the Characterization of Nonlinear Networks 205
Automatic Extraction of Measurement-Based Large-Signal FET Models by Nonlinear Function Sampling 205
Double-pulse characterization of GaN-on-Sapphire FETs for technology development 202
Characterization and Modeling of RF GaN Switches Accounting for Trap-Induced Degradation Under Operating Regimes 202
Automatic Optimization of Input Split and Bias Voltage in Digitally Controlled Dual-Input Doherty RF PAs 201
Evaluation of GaN FET power performance reduction due to nonlinear charge trapping effects 200
An empirical behavioral model for RF PAs including self-heating 199
Active baseband drain-supply terminal load-pull of an X-band GaN MMIC PA 197
Error vector magnitude measurement for power amplifiers under wideband load impedance mismatch: System-level analysis and VNA-based implementation 197
A Behavioral Approach to Equivalent-Circuit Modeling of GaN MMIC Varactor Cells 195
A Two-Port Nonlinear Dynamic Behavioral Model of RF PAs Subject to Wideband Load Modulation 194
GaN FET Nonlinear Modeling Based on Double Pulse I/V Characteristics 193
Isotrap Pulsed IV Characterization of GaN HEMTs for PA Design 193
Multi-bias nonlinear characterization of GaN FET trapping effects through a multiple pulse time domain network analyzer 193
Large-signal GaN transistor characterization and modeling including charge trapping nonlinear dynamics 190
Nonlinear Dynamic Modeling of RF PAs Using Custom Vector Fitting Algorithm 190
Joint Dual-Input Digital Predistortion of Supply-Modulated RF PA by Surrogate-Based Multi-Objective Optimization 190
A Procedure for GaN HEMT Charge Functions Extraction from Multi-Bias S-Parameters 188
A Three-Port Nonlinear Dynamic Behavioral Model for Supply-Modulated RF PAs 187
Three Port Non-Linear Characterization of Power Amplifiers under Modulated Excitations Using a Vector Network Analyzer Platform 187
Measurement-Based Automatic Extraction of FET Parasitic Network by Linear Regression 187
Iso-thermal and iso-dynamic direct charge function characterization of GaN FET with single large-signal measurement 186
Enhancing K-Band Dual-Input Doherty PA Performance by Bayesian Optimization 184
Beam-Dependent Active Array Linearization by Global Feature-Based Machine Learning 183
Two-Input Nonlinear Dynamic Model Inversion for the Linearization of Envelope-Tracking RF PAs 179
Thermal characterization of nonlinear charge trapping effects in GaN-FETs 178
A compact measurement set-up for envelope-tracking RF PAs with calibrated sensing of baseband V/I at the supply terminal 177
Load-pull measurements using Centroidal Voronoi Tessellation 177
Nonlinear charge trapping effects on pulsed I/V characteristics of GaN FETs 173
Empirical Equivalent-Circuit Modeling of mm-Wave GaN MMIC Varactors by Network Synthesis 172
Static Characterization of the X-Hall Current Sensor in BCD10 Technology 172
Nonlinear behavioral models of HEMTs using response surface methodology 169
Microwave Characterization of Trapping Effects in 100-nm GaN-on-Si HEMT Technology 169
Active baseband drain-supply terminal load-pull of an X-band GaN MMIC PA 168
A Reconfigurable Setup for the On-Wafer Characterization of the Dynamic RON of 600 V GaN Switches at Variable Operating Regimes 168
Nonlinear characterization of microwave power amplifiers with supply modulation 165
Nonlinear charge trapping effects on pulsed I/V characteristics of GaN FETs 164
A measurement setup for digital predistortion using direct RF undersampling 164
Broadband Measurement of Error Vector Magnitude for Microwave Vector Signal Generators Using a Vector Network Analyzer 162
Supply-terminal 40 MHz BW characterization of impedance-like nonlinear functions for envelope tracking PAs 161
Supply-Modulated PA Performance Enhancement by Joint Optimization of RF Input and Supply Control 161
Mixer-like modeling with dynamic baseband characterization for supply-modulated PAs 160
Hybrid nonlinear model for microwave active devices using kriging 159
Pulsed NVNA measurements for dynamic characterization of RF PAs 159
Experimental evaluation of Hall-effect current sensors in BCD10 technology 158
Broadband error vector magnitude characterization of a GaN power amplifier using a vector network analyzer 157
Trapping dynamics in gan hemts for millimeter-wave applications: Measurement-based characterization and technology comparison 156
Wideband Active Load-Pull by Device Output Match Compensation Using a Vector Network Analyzer 153
Narrow-pulse-width double-pulsed S-parameters measurements of 100-nm GaN-on-Si HEMTs 152
Experimental Characterization of Charge Trapping Dynamics in 100-nm AlN/GaN/AlGaN-on-Si HEMTs by Wideband Transient Measurements 150
A Comparative Study on Hall Plate Topologies in p-GaN Technology 149
Efficient implementation of a modified-Volterra radio-frequency power amplifier nonlinear dynamic model by global rational functions approximation 143
Measurement-Based FET Analytical Modeling Using the Nonlinear Function Sampling Approach 142
Automated Measurement Set-Up for the Electro-Mechanical Characterization of Piezoelectric Harvesters 138
Integrated Hall-Effect Broadband Current Sensor for SiC Traction Inverter 137
M2s parameters: A multi-tone multi-harmonic measurement approach for the characterization of nonlinear networks 136
VNA-based broadband EVM measurement of an RF nonlinear PA under load mismatch conditions 130
Digital post-distortion of an ADC analog front-end for gamma spectroscopy measurements 125
Enhanced wideband active load-pull with a vector network analyzer using modulated excitations and device output match compensation 124
Nonlinear FET modeling from a single NVNA measurement by nonlinear function sampling 122
Mixer-like modeling with dynamic baseband characterization for supply-modulated PAs 122
Design, characterisation, and digital linearisation of an ADC analogue front-end for gamma spectroscopy measurements 122
null 120
Experimental evaluation of sub-sampling IQ detection for low-level RF control in particle accelerator systems 117
null 115
Nonlinear RF Modeling of GaN HEMTs with Fermi Kinetics Transport and the ASM-HEMT Compact Model [Young Professionals] 112
Wideband Automated Tuning of Ka-Band Dual Input Doherty MMIC PA using Bayesian optimization 107
Advancing RF GaN HEMTs: A Perspective on Measurement and Characterization Techniques 106
null 106
Pulsed techniques for the characterization of low-frequency dispersive effects in RF power FETs using a flexible measurement set-up 103
MMIC Power Amplifier in GaAs HBT Technology for Wi-Fi 6 Applications 103
Experimental Characterization of Drain Current Transient Effects in 'Buffer-Free' RF GaN HEMTs 102
Modulated-Input Control and Linearization of a Multi-Port Millimeter-Wave PA by VNA-based Calibrated Wideband Measurements 99
RF GaN-HEMT Technology Evaluation Framework Based on Drain Current Transient Measurements 99
Millimeter-Wave Implementation of Phased Array Emulation from Wideband Load-Pull Envelope Measurements 98
Combined Wideband Active Load-Pull and Modulation Distortion Characterization with a Vector Network Analyzer 90
Evaluation of Integrated GaN Diodes as Varactors for Tunable MMIC PAs from C- to K-Band 87
Comparing LSNA Calibrations: Large-Signal Network Analyzer Round Robin 84
Over-the-Air Digital Predistortion of 5G FR2 Beamformer Array by exploiting Linear Response Compensation 82
Analog Linearization of a 10-W GaN Power Amplifier by Baseband Feedback 78
Compact behavioral models of nonlinear active devices using response surface methodology 75
Evaluation of Trapping Dynamics in GaN HEMTs from Double-Pulse RF Load-Pull Measurements 75
Assessment of Dynamic Deviation Reduction-Based Volterra Modeling and Digital Predistortion of RF Passive Doubler 73
Load/Source-Pull Evaluation of Modulated Performance in GaAs HBT Power Cells for WiFi-6 70
Takeaways From the First Workshop on Modeling and Optimization for Active Devices [Young Professionals] 66
Totale 16.388
Categoria #
all - tutte 43.076
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 43.076


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021380 0 0 0 0 0 0 0 0 0 50 28 302
2021/20223.510 127 55 386 350 459 393 400 363 428 133 156 260
2022/20231.718 204 290 94 196 94 122 66 93 285 63 120 91
2023/2024729 40 178 30 66 37 91 63 81 33 32 34 44
2024/20252.566 111 285 215 193 486 103 298 68 61 94 170 482
2025/20265.721 324 580 869 457 678 345 595 237 1.226 410 0 0
Totale 16.957