GaN HEMT dispersive phenomena due to charge trapping can be effectively characterized by means of pulsed IV measurements. In this work, we exploit the wideband feature of the setup obtaining pulsed S-parameters measurements within narrow pulse widths, in the order of a few hundred ns. Then, we report the single and double-pulsed S-parameters characterization of the 100-nm GaN-on-Si HEMT technology by OMMIC, showing the impact of traps on the small-signal parameters and providing significant data for compact model identification.

Narrow-pulse-width double-pulsed S-parameters measurements of 100-nm GaN-on-Si HEMTs

Angelotti A. M.;Gibiino G. P.;Florian C.;Santarelli A.
2019

Abstract

GaN HEMT dispersive phenomena due to charge trapping can be effectively characterized by means of pulsed IV measurements. In this work, we exploit the wideband feature of the setup obtaining pulsed S-parameters measurements within narrow pulse widths, in the order of a few hundred ns. Then, we report the single and double-pulsed S-parameters characterization of the 100-nm GaN-on-Si HEMT technology by OMMIC, showing the impact of traps on the small-signal parameters and providing significant data for compact model identification.
EuMIC 2019 - 2019 14th European Microwave Integrated Circuits Conference
17
20
Angelotti A.M.; Gibiino G.P.; Florian C.; Santarelli A.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11585/715722
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