A novel and fast method for the measurement-based identification of an analytical field-effect transistor (FET) compact model from large-signal waveforms is presented. Based on a two-tone two-port experiment, a recently published nonlinear function sampling (NFS) operator providing the samples of the FET state functions in the voltage domain is here exploited, for the first time, to extract an equivalent-circuit model. The approach is demonstrated on a 250-nm gallium nitride (GaN)-on-silicon carbide (SiC) high-electron-mobility transistor (HEMT) at 2.5 and 5 GHz.
Martin-Guerrero T.M., Santarelli A., Gibiino G.P., Traverso P.A., Camacho-Penalosa C., Filicori F. (2020). Measurement-Based FET Analytical Modeling Using the Nonlinear Function Sampling Approach. IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 30(12), 1145-1148 [10.1109/LMWC.2020.3027989].
Measurement-Based FET Analytical Modeling Using the Nonlinear Function Sampling Approach
Santarelli A.;Gibiino G. P.;Traverso P. A.;Filicori F.
2020
Abstract
A novel and fast method for the measurement-based identification of an analytical field-effect transistor (FET) compact model from large-signal waveforms is presented. Based on a two-tone two-port experiment, a recently published nonlinear function sampling (NFS) operator providing the samples of the FET state functions in the voltage domain is here exploited, for the first time, to extract an equivalent-circuit model. The approach is demonstrated on a 250-nm gallium nitride (GaN)-on-silicon carbide (SiC) high-electron-mobility transistor (HEMT) at 2.5 and 5 GHz.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
