Drain current transient measurements performed on an RF GaN HEMT device manufactured using a 'buffer-free' technology are compared with those from a corresponding device sharing the same layout and processing steps but utilizing a conventional Fe-doped buffer. A substantially different empirical behavior is observed, that is characterized by a significantly reduced drain-lag and non-monotonic current transients with extended relaxation times.
Cangini S., Gibiino G.P., Angelotti A.M., Florian C., Santarelli A., Lorenzini M. (2024). Experimental Characterization of Drain Current Transient Effects in 'Buffer-Free' RF GaN HEMTs [10.23919/GeMiC59120.2024.10485314].
Experimental Characterization of Drain Current Transient Effects in 'Buffer-Free' RF GaN HEMTs
Cangini S.;Gibiino G. P.;Angelotti A. M.;Florian C.;Santarelli A.;
2024
Abstract
Drain current transient measurements performed on an RF GaN HEMT device manufactured using a 'buffer-free' technology are compared with those from a corresponding device sharing the same layout and processing steps but utilizing a conventional Fe-doped buffer. A substantially different empirical behavior is observed, that is characterized by a significantly reduced drain-lag and non-monotonic current transients with extended relaxation times.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
