A comprehensive framework is proposed for the extraction of RF GaN HEMT trap-related parameters (gate/drain lag, thermal resistance, trap activation energy, cross-section, and reduction of the 2DEG charge density due to trapping) from a small set of drain current transient (DCT) waveforms at a few different gate/drain voltage levels. The alternative identification of gate/drain lag and thermal resistance based on single-pulsed I-V (SPIV) characterization is shown to provide the same results, whereas the other trapping-related parameters cannot be extracted with a traditional SPIV approach, making the proposed DCT-based framework a more complete yet straightforward procedure for the comparative assessment of GaN HEMT process technologies.
Cangini S., Gibiino G.P., Angelotti A.M., Florian C., Santarelli A., Lorenzini M. (2023). RF GaN-HEMT Technology Evaluation Framework Based on Drain Current Transient Measurements. Institute of Electrical and Electronics Engineers Inc. [10.1109/INMMIC57329.2023.10321773].
RF GaN-HEMT Technology Evaluation Framework Based on Drain Current Transient Measurements
Cangini S.
;Gibiino G. P.;Angelotti A. M.;Florian C.;Santarelli A.;
2023
Abstract
A comprehensive framework is proposed for the extraction of RF GaN HEMT trap-related parameters (gate/drain lag, thermal resistance, trap activation energy, cross-section, and reduction of the 2DEG charge density due to trapping) from a small set of drain current transient (DCT) waveforms at a few different gate/drain voltage levels. The alternative identification of gate/drain lag and thermal resistance based on single-pulsed I-V (SPIV) characterization is shown to provide the same results, whereas the other trapping-related parameters cannot be extracted with a traditional SPIV approach, making the proposed DCT-based framework a more complete yet straightforward procedure for the comparative assessment of GaN HEMT process technologies.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
