A comprehensive framework is proposed for the extraction of RF GaN HEMT trap-related parameters (gate/drain lag, thermal resistance, trap activation energy, cross-section, and reduction of the 2DEG charge density due to trapping) from a small set of drain current transient (DCT) waveforms at a few different gate/drain voltage levels. The alternative identification of gate/drain lag and thermal resistance based on single-pulsed I-V (SPIV) characterization is shown to provide the same results, whereas the other trapping-related parameters cannot be extracted with a traditional SPIV approach, making the proposed DCT-based framework a more complete yet straightforward procedure for the comparative assessment of GaN HEMT process technologies.
RF GaN-HEMT Technology Evaluation Framework Based on Drain Current Transient Measurements / Cangini S.; Gibiino G.P.; Angelotti A.M.; Florian C.; Santarelli A.; Lorenzini M.. - ELETTRONICO. - (2023), pp. 1-4. (Intervento presentato al convegno 2023 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMiC 2023 tenutosi a prt nel 2023) [10.1109/INMMIC57329.2023.10321773].
RF GaN-HEMT Technology Evaluation Framework Based on Drain Current Transient Measurements
Cangini S.
;Gibiino G. P.;Angelotti A. M.;Florian C.;Santarelli A.;
2023
Abstract
A comprehensive framework is proposed for the extraction of RF GaN HEMT trap-related parameters (gate/drain lag, thermal resistance, trap activation energy, cross-section, and reduction of the 2DEG charge density due to trapping) from a small set of drain current transient (DCT) waveforms at a few different gate/drain voltage levels. The alternative identification of gate/drain lag and thermal resistance based on single-pulsed I-V (SPIV) characterization is shown to provide the same results, whereas the other trapping-related parameters cannot be extracted with a traditional SPIV approach, making the proposed DCT-based framework a more complete yet straightforward procedure for the comparative assessment of GaN HEMT process technologies.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
